Publicaciones
Affichage de 15531 à 15540 sur 16278
Surface roughness, strain and alloy segregation in lattice matched heteroepitaxy
C. Priester, G. Grenet
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2000, 61, pp.16029-16032. ⟨hal-00158658⟩
Comparison between TiAl and TiAlNiAu ohmic contacts to n-type GaN
B. Boudart, S. Trassaert, X. Wallart, J.C. Pesant, O. Yaradou, D. Theron, Y. Crosnier, H. Lahreche, F. Omnes
Journal of Electronic Materials, 2000, 29, pp.603-606. ⟨hal-00158984⟩
Diagnosis of trapping phenomena in GaN MESFET's
G. Meneghesso, A. Chini, E. Zanoni, M. Manfredi, M. Pavesi, B. Boudart, Christophe Gaquière
2000, pp.389-392. ⟨hal-00159002⟩
Enhancement-mode metamorphic Al0.67In0.33As/Ga0.66In0.34 HEMT on GaAs substrate
Mustafa Boudrissa, Elisabet Delos, Yvon Cordier, Didier Theron, Jean-Claude de Jaeger
The Fourth International Conference of the Learning Sciences, Jun 2000, Ann Arbor, MI, United States. pp.IV-7, IV-8. ⟨hal-00159007⟩
Organisation et propriétés électroniques de monocouches d'alkylsiloxanes fonctionnalisées par des groupements conjugués
S. Lenfant, J. Collet, D. Vuillaume, A. Bouloussa, F. Rondelez, J. Gay, K. Kham, C. Chevrot
7èmes Journées de la Matière Condensée, 2000, Poitiers, France. ⟨hal-00158947⟩
Théorie du transport électronique d'une diode moléculaire à base de quinolinium tricyanoquinodimethanide
Christophe Krzeminski, Christophe Delerue, Dominique Vuillaume, Guy Allan
7èmes Journées de la Matière Condensée, 2000, Poitiers, France. ⟨hal-00158948⟩
Gate ionization current of an enhancement-mode metamorphic Al0.67In0.33As/Ga0.66In0.34As HEMT on GaAs substrate
Mustafa Boudrissa, Elisabet Delos, Yvon Cordier, Didier Theron, Jean-Claude de Jaeger
30th European Microwave Conferences, 2000, Paris, France. pp.90-93. ⟨hal-00159006⟩
Theory of scanning tunneling microscopy of defects on semiconductors surfaces
X. de La Broïse, C. Delerue, M. Lannoo, B. Grandidier, D. Stievenard
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2000, 61, pp.2138-2145. ⟨hal-00158951⟩
Electronic structure and rectification properties of a molecular diode
Christophe Krzeminski, Christophe Delerue, Guy Allan, Dominique Vuillaume, Robert M Metzger
Asia-Pacific Surface and Interface Analysis Conference, APSIAC 2000, 2000, Beijing, China. ⟨hal-00158953⟩
A study of the formation of nano-domains in mixed alkylsiloxane self-assembled monolayers on silicon
Laurent Breuil, Dominique Vuillaume
Proceedings of the 9th International Conference on Organized Molecular Films, LB9, Aug 2000, Potsdam, Germany. ⟨hal-00158958⟩