Publicaciones

• Autre publication scientifique

Simulation, conception et caractérisation de microcathodes à émission de champ sur arséniure de gallium. Intégration d'une grille de commande

O. Yaradou

2000. ⟨hal-00158182⟩

• Communication dans un congrès

Microwave applicators used for medical applications

J. Pribetich, J.C. Camart, Luc Dubois, M. Chive

Progress in Electromagnetics Research Symposium, PIERS 2000, Jul 2000, Cambridge, MA, United States. ⟨hal-00158190⟩

• Article dans une revue

Transferred substrate InP-based heterostructure barrier varactor diodes on quartz

S. Arscott, T. David, X. Melique, P. Mounaix, O. Vanbesien, D. Lippens

IEEE Microwave and Guided Wave Letters, 2000, 10, pp.472-474. ⟨hal-00158201⟩

• Article dans une revue

Comparison of In0.33Al0.67As/In0.34Ga0.66As on GaAs metamorphic high electron mobility transistors grown by molecular beam epitaxy with normal and inverse step on linear graded buffer layers

Y. Cordier, J.M. Chauveau, D. Ferre, J. Dipersio

Journal of Vacuum Science and Technology, 2000, 18, pp.2513-2517. ⟨hal-00158227⟩

• Article dans une revue

Fabrication and performance of InP-based heterostructure barrier varactor in a 250 GHz wave guide tripler

X. Melique, A. Maestrini, R. Farre, P. Mounaix, M. Favreau, O. Vanbesien, J.M. Goutoule, F. Mollot, Gérard Beaudin, T. Narhi, D. Lippens

IEEE Transactions on Microwave Theory and Techniques, 2000, 48, pp.1000-1006. ⟨hal-00158200⟩

• Communication dans un congrès

Electrical characterization of liquid crystals with microstrip-line device for microwave applications

Bertrand Splingart, Nicolas Tentillier, Fabrice Huret, Jean-Claude Carru, Christian Legrand, P. Kennis

In this communication, a microstrip line cell method for dielectric spectroscopy is described (Fig. 2).The cell and an electromagnetic simulation software allow us to study the dielectric dispersion and absorption spectra for both components of the dielectric permittivity tensor of uniaxial systems...

Progress in Electromagnetics Research Symposium - PIERS 2000, Jul 2000, Cambridge, MA, United States. ⟨hal-00158494⟩

• Article dans une revue

The electron beam induced reactivation of Si dopants in hydrogenated GaAs : a minority carrier generation effect or an energetic excitation effect ?

S. Silvestre, D. Bernard-Loridant, E. Constant, M. Constant, Jacques Chevallier

Applied Physics Letters, 2000, 20, pp.3206-3208. ⟨hal-00158582⟩

• Communication dans un congrès

Les matériaux métamorphiques : une voie pour l'intégration de composants pour applications millimétriques sur substrat d'arséniure de gallium

Y. Cordier, A. Cappy, M. Zaknoune, S. Bollaert

Journée Thématique sur l'Electronique Intégrée, 2000, Arcueil, France. ⟨hal-00158447⟩

• Article dans une revue

Atomic-scale study of GaMnAs/GaAs

B. Grandidier, J.P. Nys, C. Delerue, D. Stievenard, Y. Higo, M. Tanaka

Applied Physics Letters, 2000, 77, pp.4001-4003. ⟨hal-00158645⟩

• Article dans une revue

Method for tight-binding parametrization : application to silicon nanostructures

Yann-Michel Niquet, Christophe Delerue, Guy Allan, Michel Lannoo

We propose a method for tight-binding parametrization, designed to give accurate results in the calculation of confined edge states in semiconductor nanostructures of any size. Indeed, this improved tight-binding description accurately reproduces the bulk effective masses as well as the overall...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2000, 62, pp.5109-5116. ⟨10.1103/PhysRevB.62.5109⟩. ⟨hal-00158664⟩