Publicaciones

• Article dans une revue

Low-voltage, 30 nm channel length, organic transistors with a self-assembled monolayer as gate insulating films

J. Collet, O. Tharaud, A. Chapoton, D. Vuillaume

Applied Physics Letters, 2000, 76, pp.1941-1943. ⟨hal-00158477⟩

• Communication dans un congrès

Nouveau microcapteur de rayonnement ultraviolet à absorption différentielle

Katir Ziouche, Mohamed Boutchich, D. Loridant-Bernard, Pascale Godts, Didier Leclercq

Journées Micro et Nano Technologies, 2000, Paris, France. ⟨hal-00158491⟩

• Article dans une revue

Method for tight-binding parametrization : application to silicon nanostructures

Yann-Michel Niquet, Christophe Delerue, Guy Allan, Michel Lannoo

We propose a method for tight-binding parametrization, designed to give accurate results in the calculation of confined edge states in semiconductor nanostructures of any size. Indeed, this improved tight-binding description accurately reproduces the bulk effective masses as well as the overall...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2000, 62, pp.5109-5116. ⟨10.1103/PhysRevB.62.5109⟩. ⟨hal-00158664⟩

• Communication dans un congrès

Les matériaux métamorphiques : une voie pour l'intégration de composants pour applications millimétriques sur substrat d'arséniure de gallium

Y. Cordier, A. Cappy, M. Zaknoune, S. Bollaert

Journée Thématique sur l'Electronique Intégrée, 2000, Arcueil, France. ⟨hal-00158447⟩

• Article dans une revue

Sub-harmonic excitation of a planar magneto-mechanical system by means of giant magnetostrictive thin films

Nicolas Tiercelin, Vladimir Preobrazhensky, Philippe Pernod, Henri Le Gall, Jamal Ben Youssef

In the present paper, we report the first results concerning the studies on non-linear actuation of cantilevers using giant magneto-strictive thin films in the vicinity of the spin reorientation transition (SRT). Bimorph centimetre beams (24×5 mm2) were designed using 160 μm thick glass, and 0.4 μm...

Journal of Magnetism and Magnetic Materials, 2000, 210 (1-3), pp.302-308. ⟨10.1016/S0304-8853(99)00658-7⟩. ⟨hal-00158465⟩

• Article dans une revue

The electron beam induced reactivation of Si dopants in hydrogenated GaAs : a minority carrier generation effect or an energetic excitation effect ?

S. Silvestre, D. Bernard-Loridant, E. Constant, M. Constant, Jacques Chevallier

Applied Physics Letters, 2000, 20, pp.3206-3208. ⟨hal-00158582⟩

• Article dans une revue

Microscopic characterization of defects using scanning tunneling microscopy

D. Stievenard

Materials Science and Engineering: B, 2000, B71, pp.120-127. ⟨hal-00158667⟩

• Article dans une revue

Atomic-scale study of GaMnAs/GaAs

B. Grandidier, J.P. Nys, C. Delerue, D. Stievenard, Y. Higo, M. Tanaka

Applied Physics Letters, 2000, 77, pp.4001-4003. ⟨hal-00158645⟩

• Communication dans un congrès

Finite element modeling of damping using piezoelectric materials

Anne-Christine Hladky, C. Granger

2000, pp.64-65. ⟨hal-00157823⟩

• Article dans une revue

Conical radiating waves in immersed wedges

Anne-Christine Hladky, P. Langlet, M. de Billy

Journal of the Acoustical Society of America, 2000, 108, pp.3079-3083. ⟨hal-00157821⟩