Publicaciones

• Article dans une revue

Raman characterization of SiNx deposition on undoped Ga0.47In0.53As material grown on InP substrate

B. Boudart, Christophe Gaquière, M. Constant, A. Lorriaux, N. Lefebvre

Effects of SiNx deposition on undoped Ga0.47In0.53As bulk layer grown on InP substrate were investigated using Raman spectroscopy. No Raman shift as a result of strain induced from the dielectric deposition was observed in the Ga0.47In0.53As material, whatever the thickness and the temperature...

Journal of Raman Spectroscopy, 1999, 30 (8), pp.715 - 719. ⟨10.1002/(SICI)1097-4555(199908)30:83.0.CO;2-T⟩. ⟨hal-01647799⟩

• Article dans une revue

Millimeter-wave array fed through thick slots filled with dielectric

M. Sleimen, Mohamed Himdi, J. P. Daniel, N. Haese, P. A. Rolland

This paper deals with millimeter-wave microstrip antenna arrays. The objectives were to develop and optimize a microstrip-to-thick-slot-line transition near 40 GHz, and to feed a printed array with this kind of transition. The influence of such a transition between the two layers, and its effect on...

Microwave and Optical Technology Letters, 1999, 22 (1), pp.51 - 53. ⟨10.1002/(SICI)1098-2760(19990705)22:13.0.CO;2-H⟩. ⟨hal-01784953⟩

• Article dans une revue

Implementation of conductor losses FDTD algorithm combined with Floquet boundary conditions. Application to the study of millimeter waves resonant cavities

Ronan Sauleau, Daniel Thouroude, Philippe Coquet, J.P. Daniel, T. Matsui

Microwave and Optical Technology Letters, 1999, 22 (2), 103-108 - 6 p. ⟨hal-00557650⟩

• Article dans une revue

FDTD analysis and experiment of Fabry-Perot cavities at 60 GHz

Ronan Sauleau, Philippe Coquet, Daniel Thouroude, J.P. Daniel, H. Yuzawa, N. Hirose, T. Matsui

IEICE Transactions on Electronics, 1999, E82-C (7), 1139-1147 - 9 p. ⟨hal-00557654⟩

• Communication dans un congrès

Defects in Nanostructures

Michel Lannoo, Christophe Delerue, Guy Allan

International Conference on Defects in Semiconductors, Jul 1999, Berkeley, United States. ⟨hal-03316949⟩

• Article dans une revue

Electron channel drop tunnelling

Jerome O. Vasseur, L. Dobrzynski, Bahram Djafari-Rouhani, Abdellatif Akjouj, J Vasseur, M Lahlaouti

Journal of Physics: Condensed Matter, 1999, 11 (23), pp.L247-L252. ⟨10.1088/0953-8984/11/23/102⟩. ⟨hal-03301331⟩

• Article dans une revue

Electron channel drop tunnelling

Leonard Dobrzynski, B Djafari-Rouhani, Abdellatif Akjouj, J Vasseur, M Lahlaouti

Journal of Physics: Condensed Matter, 1999, 11 (23), pp.L247-L252. ⟨10.1088/0953-8984/11/23/102⟩. ⟨hal-04070823⟩

• Article dans une revue

Ultrasonic evaluation of stresses in orthotropic materials using Rayleigh waves

Marc Duquennoy, Mohammadi Ouaftouh, Mohamed Ourak

NDT & E International, 1999, 32 (4), pp.189-199. ⟨10.1016/S0963-8695(98)00046-2⟩. ⟨hal-03811450⟩

• Article dans une revue

Determination of stresses in aluminium alloy using optical detection of Rayleigh waves

M. Duquennoy, M. Ouaftouh, Mohamed Ourak

Ultrasonics, 1999, 37 (5), pp.365-372. ⟨10.1016/S0041-624X(99)00009-8⟩. ⟨hal-03811449⟩

• Article dans une revue

Raman characterization of SiNx deposition on undoped Al0.48In0.52As and n+ Ga0.47In0.53As layers for InP high electron mobility transistor applications

B. Boudart, Christophe Gaquière, S. Trassaert, M. Constant, A. Lorriaux, N. Lefebvre

Applied Physics Letters, 1999, 74 (21), pp.3221 - 3223. ⟨10.1063/1.124111⟩. ⟨hal-01646787⟩