Publicaciones

• Article dans une revue

Evaluation of niobium effects on the longitudinal piezoelectric coefficients of Pb(Zr, Ti)O-3 thin films

T. Haccart, Eric Cattan, Denis Remiens, S. Hiboux, P. Muralt

Applied Physics Letters, 2000, 76, pp.3292-3294. ⟨hal-00158542⟩

• Article dans une revue

Atomic force microscope tip-surface behaviour under continuous bias or pulsed voltages in non contact mode

Bernard Legrand, D. Stievenard

Applied Physics Letters, 2000, 76, pp.1018-1020. ⟨hal-00158646⟩

• Communication dans un congrès

Fast photodetection

Jean-Pierre Vilcot, Joseph Harari, M. Fendler, V. Magnin, Samuel Dupont, Didier Decoster

3rd European Microwave Week, Workshop on Microwave Optoelectronics, 2000, Paris, France. ⟨hal-00158617⟩

• Communication dans un congrès

Composants optoélectroniques et photoniques pour télécommunications du futur

Didier Decoster, Jean-Pierre Vilcot

48èmes Journées Nationales de l'Union des Physiciens, 2000, Lille, France. ⟨hal-00158618⟩

• Autre publication scientifique

Contribution de la microscopie acoustique à la caractérisation des matériaux. Application à la détermination des constantes élastiques

M. Lematre

2000. ⟨hal-00162701⟩

• Article dans une revue

Quantum confinement in germanium nanocrystals

Yann-Michel Niquet, Guy Allan, Christophe Delerue, Michel Lannoo

The electronic structure of Ge nanocrystals is studied using a sp3 tight binding description. Analytical laws for the confinement energies, valid over the whole range of sizes, are derived. We validate our results with ab initio calculations in the local density approximation for smaller clusters....

Applied Physics Letters, 2000, 77, pp.1182-1184. ⟨10.1063/1.1289659⟩. ⟨hal-00158666⟩

• Article dans une revue

Nature of impurity states in doped amorphous silicon

Guy Allan, Christophe Delerue, Michel Lannoo

We calculate the electronic structure of doped amorphous silicon in a tight-binding framework. Substitutional impurities are randomly introduced at fourfold-coordinated sites of a previously published model of a-Si:H. Our most important result is that single impurities have much larger binding...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2000, 61, pp.10206-10210. ⟨10.1103/PhysRevB.61.10206⟩. ⟨hal-00158663⟩

• Communication dans un congrès

An ultra high switching frequency step-down DC-DC converter based on gallium arsenide devices

Mamadou Gaye, Sami Ajram, Paul Maynadier, Georges Salmer

A 50MHz to 100MHz dc-dc power converter using Gallium Arsenide power switches is studied. GaAs Schottky rectifiers with high breakdown voltage and very small Ron x Con switching quality factor have been fabricated. A 10V to 5V (or 8V) prototype with an output power of 2.6Watts and a power...

_, 2000, _, France. 4 pp. ⟨hal-00157875⟩

• Communication dans un congrès

Microradiomètres thermiques

K. Ziouche, P. Godts, D. Leclercq

Journée Microsystèmes, 2000, Paris, France. ⟨hal-00158492⟩

• Article dans une revue

Acoustic wave scattering from a composed shell reinforced by a single rib : characteristics of peripheral waves

Bertrand Dubus, N. Veksler, A. Lavie

Ultrasonics, 2000, 38, pp.838-841. ⟨hal-00157817⟩