Publicaciones

• Article dans une revue

Electron induced dissociation of SiH complexes in hydrogenated Si doped GaAs. Application to the fabrication of microstructures

S. Silvestre, E. Constant, D. Bernard-Loridant, M. Constant, Jacques Chevallier

Superlattices and Microstructures, 2000, 5/6, pp.431-435. ⟨hal-00158581⟩

• Article dans une revue

Synthesis and microwave characterizations of crosslinked oligoimide

L. Bes, B. Boutevin, A. Rousseau, R. Mercier, B. Bellini, Didier Decoster, J.F. Larchanche, Jean-Pierre Vilcot

Synthetic Metals, 2000, 115, pp.251-256. ⟨hal-00158576⟩

• Communication dans un congrès

Microtechnologies for the monolithic fabrication of mm and submm nonlinear devices

P. Mounaix, S. Arscott, T. David, Florence Podevin, X. Melique, D. Lippens

2000, pp.28-31. ⟨hal-00158204⟩

• Article dans une revue

Modeling of integrated Lamb waves generation systems using a coupled finite element-normal modes expansion method

Emmanuel Moulin, Jamal Assaad, Christophe Delebarre, Sébastien Grondel, D. Balageas

Ultrasonics, 2000, 38, pp.522-526. ⟨hal-00159052⟩

• Article dans une revue

Détection de failles par méthodes sismiques lors du creusement des tunnels, Seismic techniques to detect faults when driving tunnels

Benoit Celse, Bernard Vayssade, Jean Pierre Henry, Philippe Côte, O. Abraham, Bogdan Piwakowski

L'objectif de cet article est de présenter une nouvelle méthode de reconnaissance à l'avancement. Le but est la caractérisation tridimensionnelle du massif en avant du front de taille par méthodes sismiques. La tomographie réflexion a été choisie car elle permet d'obtenir, « en temps..., A new tunnel heading survey method is presented which uses seismic techniques to characterize in three dimensions the rock in front of the tunnel face. The technique of reflection tomography was selected as this provides a high resolution "real-time" map of wave velocities in the rock. lt...

Bulletin des Laboratoires des Ponts et Chaussees, 2000, 226, pp.13-25. ⟨hal-00250441⟩

• Communication dans un congrès

Electrical characterization of liquid crystals with microstrip-line device for microwave applications

Bertrand Splingart, Nicolas Tentillier, Fabrice Huret, Jean-Claude Carru, Christian Legrand, P. Kennis

In this communication, a microstrip line cell method for dielectric spectroscopy is described (Fig. 2).The cell and an electromagnetic simulation software allow us to study the dielectric dispersion and absorption spectra for both components of the dielectric permittivity tensor of uniaxial systems...

Progress in Electromagnetics Research Symposium - PIERS 2000, Jul 2000, Cambridge, MA, United States. ⟨hal-00158494⟩

• Article dans une revue

Vector and parallel implementations for the FDTD analysis of millimeter wave planar antennas

H. Hoteit, Ronan Sauleau, B. Philippe, Philippe Coquet, J.P. Daniel

International Journal of High Speed Computing, 1999, 10 (2), 209-234 - 25 p. ⟨hal-00557655⟩

• Communication dans un congrès

Nano-lithography by SPM-induced oxidation: role of space charge in the kinetics of oxide growth

Emmanuel Dubois, Jean-Luc Bubendorff

Proc. of the International Semiconductor Device Research Symposium ISDRS’99, Dec 1999, Charlottesville, United States. ⟨hal-04249195⟩

• Article dans une revue

Role of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPE

J.-L Farvacque, Z. Bougrioua, I Moerman, G. van Tendeloo, O. Lebedev

Physica B: Condensed Matter, 1999, 273-274, pp.140-143. ⟨10.1016/S0921-4526(99)00431-7⟩. ⟨hal-02906481⟩

• Article dans une revue

Uniformity improvement of linear power pHEMTs using a very high selective wet etching

X. Hue, B. Boudart, B. Bonte, Y. Crosnier

The realization and characterization of Al0.22Ga0.78As/In0.22Ga0.78As/GaAs multifinger linear power pHEMTs, using a citric acid selective wet etching for the gate recessing, are reported. A very high uniformity for both the drain current and pinch-off voltage values have been obtained. The...

Microwave and Optical Technology Letters, 1999, 23 (3), pp.192 - 194. ⟨10.1002/(SICI)1098-2760(19991105)23:33.0.CO;2-5⟩. ⟨hal-01646851⟩