Publicaciones

• Article dans une revue

Rapid thermal processing of PZT thin films using a new triol based sol-gel route

S. Arscott, R. Miles, S. Milne

Ferroelectrics, 1999, 228 (1), pp.61-78. ⟨10.1080/00150199908226126⟩. ⟨hal-02348071⟩

• Article dans une revue

Defect modes in one-dimensional comblike photonic waveguides

Jerome O. Vasseur, J. Vasseur, Bahram Djafari-Rouhani, L. Dobrzynski, Abdellatif Akjouj, J. Zemmouri

Physical Review B, 1999, 59 (20), pp.13446-13452. ⟨10.1103/PhysRevB.59.13446⟩. ⟨hal-03301326⟩

• Communication dans un congrès

Réalisation de cavités résonantes à 60 GHz constituées de grilles planaires en aluminium déposées sur substrat de quartz amorphe

S. Pisak, Ronan Sauleau, Philippe Coquet, Jacques Pinel, T. Matsui, J.P. Daniel

Onzièmes Journées Nationales Micro-ondes, May 1999, Arcachon, France. 2 p. ⟨hal-00557797⟩

• Article dans une revue

Determination of the mechanical properties of thin polyimide films deposited on a GaAs substrate by bulging and nanoindentation tests

Christophe Poilâne, P. Delobelle, L. Bornier, P. Mounaix, X. Melique, D. Lippens

Materials Science and Engineering: A, 1999, 262 (1-2), pp.101-106. ⟨10.1016/S0921-5093(98)01002-8⟩. ⟨hal-03347252⟩

• Article dans une revue

Stress induced leakage currents in N-MOSFETs submitted to channel hot carrier injections

D Goguenheim, Alain Bravaix, Dominique Vuillaume, F Mondon, M Jourdain, A Meinertzhagen

In this study, we report on the electrical properties of the stress induced leakage current which appears through a 4.7 nm-thick SiO2 gate oxide of N-channel metal-oxide-semiconductor field effect transistors after localized channel hot carrier injections and Fowler–Nordheim uniform injections. We...

Journal of Non-Crystalline Solids, 1999, 245 (1-3), pp.41-47. ⟨10.1016/S0022-3093(98)00852-7⟩. ⟨hal-03674356⟩

• Article dans une revue

Large magnonic band gaps and defect modes in one-dimensional comblike structures

Housni Al-Wahsh, Abdellatif Akjouj, Bahram Djafari-Rouhani, Jerome O. Vasseur, L. Dobrzynski, Pierre A. Deymier

We report the existence of large gaps in the band structure of a comblike structure composed of a one-dimensional magnonic waveguide along which N′ dangling side branches are grafted at N equidistant sites. These gaps originate not only from the periodicity of the system but also from the resonance...

Physical Review B, 1999, 59 (13), pp.8709-8719. ⟨10.1103/PhysRevB.59.8709⟩. ⟨hal-03301325⟩

• Article dans une revue

Rapid thermal processing of lead zirconate titanate thin films on Pt–GaAs substrates based on a novel 1,1,1-tris(hydroxymethyl)ethane sol-gel route

S. Arscott, R. Miles, J. Kennedy, S. Milne

Journal of Materials Research, 1999, 14 (2), pp.494-499. ⟨10.1557/JMR.1999.0070⟩. ⟨hal-02348064⟩

• Article dans une revue

Experimental study of the quasi-breakdown failure mechanism in 4.5 nm-thick SiO2 oxides

D. Goguenheim, Alain Bravaix, Dominique Vuillaume, F. Mondon, Ph. Candelier, M. Jourdain, A. Meinertzhagen

In this study, we have investigated the electrical properties of the failure mode referred as quasi-breakdown or soft-breakdown in MOS capacitors on p-type substrate with an oxide thickness of 4.5 nm. Quasi-breakdown appears during high field stresses as a sudden increase between two and four...

Microelectronics Reliability, 1999, Microelectronics Reliability, 39 (2), pp.165-169. ⟨10.1016/S0026-2714(98)00215-7⟩. ⟨hal-03689782⟩

• Article dans une revue

Theoretical reflexion coefficient of metal grid reflectors at a dielectric boundary

Ronan Sauleau, Daniel Thouroude, Philippe Coquet, J.P. Daniel

International Journal of Infrared and Millimeter Waves, 1999, 20 (2), 325-340 - 16 p. ⟨hal-00557636⟩

• Article dans une revue

Experimental study of the quasi-breakdown failure mechanism in 4.5 nm-thick SiO2 oxides

D. Goguenheim, Alain Bravaix, Dominique Vuillaume, F. Mondon, Ph. Candelier, M. Jourdain, A. Meinertzhagen

In this study, we have investigated the electrical properties of the failure mode referred as quasi-breakdown or soft-breakdown in MOS capacitors on p-type substrate with an oxide thickness of 4.5 nm. Quasi-breakdown appears during high field stresses as a sudden increase between two and four...

Microelectronics Reliability, 1999, 39 (2), pp.165-169. ⟨10.1016/S0026-2714(98)00215-7⟩. ⟨hal-03674374⟩