Publicaciones

• Communication dans un congrès

Optimization of GaAs/Al0.22Ga0.78As HFET gate recess for the realization of linear power amplifier

X. Hue, B. Boudart, Y. Crosnier

8th European Workshop on Heterostructure Technology (HETECH), 1998, Cardiff, United Kingdom. ⟨hal-01654297⟩

• Article dans une revue

Triol sol-gel route for preparing PZT thin films

S. Arscott

Ceramic Transactions, 1998. ⟨hal-02348121⟩

• Article dans une revue

An Accurate Dual-Gate HFET Nonlinear Model for Millimeter-Wave MMIC Design

Rachid Allam, Christophe Kolanowski, J. C. De Jaeger, Y. Crosnier

An accurate nonlinear model for dual-gate HFETs is presented in this paper. Because of the complexity of the global equivalent circuit, the dual-gate transistor is modeled as two single-gate devices in cascode configuration. A good agreement between the measured and simulated performance is...

International Journal of Microwave and Millimeter-Wave Computer-Aided Engineering, 1998, 1998 (4), pp.315--320. ⟨10.1002/(SICI)1099-047X(199807)8:43.0.CO;2-E⟩. ⟨hal-03360875⟩

• Article dans une revue

Noise analysis of 0.1 mm gate MESFETs and HEMTs

Javier Mateos, Tomas Gonzalez, Daniel Pardo, Patrick Tadyszak, Francois Danneville, A. Cappy

Solid-State Electronics, 1998, 42 (1), pp.79-85. ⟨10.1016/S0038-1101(97)00196-2⟩. ⟨hal-03612836⟩

• Communication dans un congrès

Miniaturized deformable magnetic mirror for adaptive optics

Skandar Basrour, J. Boussey-Said, O. Cugat, C. Divoux, P. Mounaix, P. Kern

An alternative approach to more compact deformable mirrors for adaptive optics is developed. A thin and flexible reflective membrane is coated with a magnetic layer and locally deformed by the field created by an array of planar microcoils. This novel technology should enable higher resolution with...

Int. Symp. on Astronomical Telescopes and Instrumentation., 1998, Kona, Hawaii, France. pp.850-857. ⟨hal-00009140⟩

• Communication dans un congrès

Etude du contact Ti/Al/Ni/Au sur GaN

S. Trassaert, B. Boudart, Xavier Wallart, J.C. Pesant, L Fugère, Didier Theron, Y. Crosnier

GDR Matériaux Grand Gap, 1998, Villeneuve d'Ascq, France. ⟨hal-01654461⟩

• Communication dans un congrès

A complementary approach to the access design of millimeter power HFETs

Yann Michel Niquet, Stephane Piotrowicz, Bertrand Bonte, X. Hue, S. Trassaert, B. Boudart, Y. Crosnier

A complementary approach to the access design of millimeter power HFETs . 28th European Microwave Conference (EUMC) , 1998, Amsterdam, Netherlands. ⟨hal-01649391⟩

• Proceedings/Recueil des communications

Radio over Fiber Telecommunications Systems : the Key Optoelectronic Devices for the Receiver

Jean-Pierre Vilcot, Manuel Fendler, Filipe Jorge, J. Barette, Vincent Magnin, Sophie Maricot, Didier Decoster

Recent developments in radio over fiber telecommunication systems such as micro- or pico- cellular mobile communications would require specific performance from either optical emitters or receivers . In this paper, we will describe this receiver part, i.e. the optical to micro- or millimeter- wave...

COMPOUND SEMICONDUCTOR POWER TRANSISTORS and STATE- OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXIX), 98 (12), THE ELECTROCHEMICAL SOCIETY, INC., pp.257, 1998, 9781566772228. ⟨hal-04452141⟩

• Chapitre d'ouvrage

Microwave short-range interferometer

A. Benlarbi-Delai, J.C. Cousin, R. Ringot, A. Mamouni, Y. Leroy

MSM (Microsystems), Volume 1, NSTI Publications, Danville, CA USA, pp.637-642, 1998. ⟨hal-00132367⟩

• Article dans une revue

Influence of the operating temperature on the design and utilization of 94 GHz pulsed silicon IMPATT diodes

Christophe Dalle, Stéphane Beaussart, Marie-Renée Friscourt

The RF and thermal behavior of 94-GHz P/sup +/PNN/sup +/ double drift flat doping profile silicon impact ionization avalanche transit time (IMPATT) diodes for high-power pulsed operation is investigated by means of time domain electrical oscillator models. It is demonstrated that these diodes have...

IEEE Electron Device Letters, 1998, EDL-19, pp.262-264. ⟨10.1109/55.701437⟩. ⟨hal-00005339⟩