Publicaciones

• Communication dans un congrès

Charge control and electron transport properties in InAlAs/InGaAs metamorphic HEMT's : effect of indium content

Y. Cordier, M. Zaknoune, S. Bollaert, A. Cappy

2000, pp.102-105. ⟨hal-00159005⟩

• Communication dans un congrès

Excitonic and quasiparticle gaps in Si nanocrystals

Christophe Delerue, Michel Lannoo, Guy Allan

We present calculations of the one- and two-particle excitations in silicon nanocrystals. The one-particle properties are handled in the GW approximation, and the excitonic gap is obtained from the Bethe-Salpeter equation. We develop a tight binding version of these methods to treat clusters up to...

CECAM Workshop on Excited States and Electronic Spectra, 2000, Lyon, France. ⟨10.1103/PhysRevLett.84.2457⟩. ⟨hal-00158952⟩

• Communication dans un congrès

STM studies of organic molecules on Si(100) : what can we learn ?

D. Stievenard

Research Conference on Manipulation of Individual Atoms and Molecules, 2000, Les Houches, France. ⟨hal-00158964⟩

• Autre publication scientifique

Conception, réalisation et caractérisation de transistors à effet de champ et d'amplificateurs pour des applications de puissance à haute linéarité en bandes K et Ka

X. Hue

2000. ⟨hal-00158969⟩

• Communication dans un congrès

AlGaInP barrier layer grown by gas source molecular beam epitaxy for V-band AlGaInP/InGaAs/GaAs power pseudomorphic HEMT

M. Zaknoune, O. Schuler, X. Wallart, S. Piotrowicz, F. Mollot, D. Theron, Y. Crosnier

2000, pp.353-356. ⟨hal-00159004⟩

• Communication dans un congrès

HEMT structures on GaAs or InP substrates for millimeter wave power amplification

Didier Theron, Yvon Cordier, X. Wallart, S. Bollaert, Mohammed Zaknoune, Mustafa Boudrissa, Bertrand Bonte, Christophe Gaquière, Francis Mollot, A. Cappy, R. Fauquembergue, Jean-Claude de Jaeger

24th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE'2000, May 2000, Aegean Sea, Greece. ⟨hal-00159030⟩

• Article dans une revue

Study in a UHF electromagnetic resonant cavity of a bubble field induced by ultrasonic cavitation

S. Labouret, J. Frohly

European Physical Journal: Applied Physics, 2000, 10, pp.231-237. ⟨hal-00159067⟩

• Communication dans un congrès

Ballistic emitter for InP heterojunction bipolar transistors

D. Sicault, S. Demichel, R. Teissier, C. Dupuis, F. Pardo, F. Mollot, J.L. Pelouard

25th International Conference on the Physics of Semiconductors, ICPS-25, 2000, Japan. pp.1781-1782. ⟨hal-00250435⟩

• Autre publication scientifique

Contribution de la microscopie acoustique à la caractérisation des matériaux. Application à la détermination des constantes élastiques

M. Lematre

2000. ⟨hal-00162701⟩

• Autre publication scientifique

Contribution à l'étude et à la réalisation d'une liaison mixte fibre radio bidirectionnelle haut débit intra-bâtiment à 60 GHz

Samuel Dupont

2000. ⟨hal-00158551⟩