Publicaciones

• Article dans une revue

Experimental study of the quasi-breakdown failure mechanism in 4.5 nm-thick SiO2 oxides

D. Goguenheim, Alain Bravaix, Dominique Vuillaume, F. Mondon, Ph. Candelier, M. Jourdain, A. Meinertzhagen

In this study, we have investigated the electrical properties of the failure mode referred as quasi-breakdown or soft-breakdown in MOS capacitors on p-type substrate with an oxide thickness of 4.5 nm. Quasi-breakdown appears during high field stresses as a sudden increase between two and four...

Microelectronics Reliability, 1999, Microelectronics Reliability, 39 (2), pp.165-169. ⟨10.1016/S0026-2714(98)00215-7⟩. ⟨hal-03689782⟩

• Article dans une revue

Rapid thermal processing of lead zirconate titanate thin films on Pt–GaAs substrates based on a novel 1,1,1-tris(hydroxymethyl)ethane sol-gel route

S. Arscott, R. Miles, J. Kennedy, S. Milne

Journal of Materials Research, 1999, 14 (2), pp.494-499. ⟨10.1557/JMR.1999.0070⟩. ⟨hal-02348064⟩

• Article dans une revue

Experimental study of the quasi-breakdown failure mechanism in 4.5 nm-thick SiO2 oxides

D. Goguenheim, Alain Bravaix, Dominique Vuillaume, F. Mondon, Ph. Candelier, M. Jourdain, A. Meinertzhagen

In this study, we have investigated the electrical properties of the failure mode referred as quasi-breakdown or soft-breakdown in MOS capacitors on p-type substrate with an oxide thickness of 4.5 nm. Quasi-breakdown appears during high field stresses as a sudden increase between two and four...

Microelectronics Reliability, 1999, 39 (2), pp.165-169. ⟨10.1016/S0026-2714(98)00215-7⟩. ⟨hal-03674374⟩

• Communication dans un congrès

High linearity of double channel GaAs PHEMT using a very high selective wet etching

X. Hue, B Boudart, Bertrand Bonte, Y. Crosnier

GAAS 99, 1999, Munich, Germany. ⟨hal-01649420⟩

• Article dans une revue

Noise analysis in devices under nonlinear operation

A. Cappy, Francois Danneville, Gilles Dambrine, Beaudouin Tamen

Solid-State Electronics, 1999, 43 (1), pp.21-26. ⟨10.1016/S0038-1101(98)00261-5⟩. ⟨hal-03612812⟩

• Article dans une revue

Electronic States and Luminescence in Porous Silicon Quantum Dots: The Role of Oxygen

M. V Wolkin, Jacob Jorne, P. M Fauchet, Guy Allan, Christophe Delerue

Depending on the size, the photoluminescence (PL) of silicon quantum dots present in porous silicon can be tuned from the near infrared to the ultraviolet when the surface is passivated with Si-H bonds. After exposure to oxygen, the PL shifts to the red by as much as 1 eV. This shift and the...

Physical Review Letters, 1999, 82 (1), pp.197-200. ⟨10.1103/PhysRevLett.82.197⟩. ⟨hal-03314703⟩

• Communication dans un congrès

Nanometer scale Lithography on Silicon, Titanium and PMMA resist

Emmanuel Dubois, Jean-Luc Bubendorff

E-MRS Materials and Processes for Submicron Technologies, vol. 89, p. 1085-1089, Editors J.M. Martinez- Duart, R. Madar, R.A. Levy, 1999, 1999, Strasbourg, France. ⟨hal-04249216⟩

• Article dans une revue

Terahertz time-domain spectroscopy of films fabricated from SU-8

S. Arscott, F. Garet, P. Mounaix, L. Duvillaret, J.-L. Coutaz, D. Lippens

Electronics Letters, 1999, 35 (3), pp.243. ⟨10.1049/el:19990146⟩. ⟨hal-02348056⟩

• Article dans une revue

Millimeter-wave pulsed oscillator global modeling by means of electromagnetic, thermal, electrical and carrier transport physical coupled models

Stéphane Beaussart, Oliver Perrin, Marie-Renée Friscourt, Christophe Dalle

The time domain modeling of the operation of a 94-GHz pulsed silicon IMPATT oscillator, based on a physical approach, is described in this paper. It relies on the coupling of electrical, thermal, electromagnetic, and carrier transport physical models. The model has been used to study the high-power...

IEEE Transactions on Microwave Theory and Techniques, 1999, 47, pp.929-934. ⟨10.1109/22.769328⟩. ⟨hal-00005341⟩

• Communication dans un congrès

EAO des circuits microondes en régime temporel : approche physique

Christophe Dalle, M.R. Friscourt

11èmes Journées Nationales Microondes, 1999, Arcachon, France. ⟨hal-00005311⟩