Publicaciones

• Article dans une revue

Low-pressure organometallic vapor phase epitaxy of coherent InGaAsP/InP and InGaAsP/InAsP multilayers on InP(001)

S. Guillon, R. Y.-F. Yip, P. Desjardins, M. Chicoine, Z. Bougrioua, M. Beaudoin, A. Aït-Ouali, R. Masut

Journal of Vacuum Science & Technology A, 1998, 16 (2), pp.781-785. ⟨10.1116/1.581521⟩. ⟨hal-02906468⟩

• Article dans une revue

Giant electronic stop bands in one-dimensional comblike structures

Jerome O. Vasseur, Abdellatif Akjouj, L. Dobrzynski, Bahram Djafari-Rouhani, J. Vasseur, M. Kushwaha

EPL - Europhysics Letters, 1998, 41 (3), pp.321-326. ⟨10.1209/epl/i1998-00150-y⟩. ⟨hal-03301311⟩

• Article dans une revue

Hot-carrier injections in SiO2

Dominique Vuillaume, Alain Bravaix, D Goguenheim

We review the hot-carrier injection phenomena in gate-oxide and the related degradation in silicon MOSFETs. We discuss the basic degradation mechanisms and the nature of the created defects by carrier injections through the gate-oxide. Emphasis is put on the discussion of dynamic hot-carrier...

Microelectronics Reliability, 1998, Microelectronics Reliability, 38 (1), pp.7-22. ⟨10.1016/S0026-2714(97)00179-0⟩. ⟨hal-03674471⟩

• Article dans une revue

Sol-gel derived thin films on GaAs

S. Arscott, N Smith, R Kurchania, S Milne, R Miles

Semiconductor Science and Technology, 1998, 13 (2), pp.244-248. ⟨10.1088/0268-1242/13/2/016⟩. ⟨hal-02348109⟩

• Article dans une revue

Influence of inhomogeneous strain relaxation on the photoluminescence of II-VI nanostructures

Y.M. Niquet, Cécile Gourgon, L.S. Dang, H. Mariette, Catherine Priester, Christophe Vieu, G. Brunthaler, H. Straub, A. Darhuber, W. Faschinger, G. Bauer

Journal of Crystal Growth, 1998, 184, pp.334-338. ⟨hal-04143190⟩

• Article dans une revue

Micromachining techniques at terahertz frequencies

S. Arscott, R.E. Miles, S.J. Milne

IEE Proceedings - Circuits, Devices and Systems, 1998, 145 (5), pp.335. ⟨10.1117/12.361055⟩. ⟨hal-02348103⟩

• Article dans une revue

Bromine/methanol wet chemical etching of via holes for InP microwave devices

S. Trassaert, B. Boudart, Stephane Piotrowicz, Y. Crosnier

We report on the realization of via holes on InP material (for the first time to our knowledge) using bromine/methanol wet chemical etching. Typical dimension of the via holes is about 80 μμm in diameter. A specific layout has been accomplished to obtain the via hole equivalent circuit....

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, 1998, 16, pp.561-564. ⟨10.1116/1.589863⟩. ⟨hal-01644706⟩

• Communication dans un congrès

Optimization of GaAs/Al0.22Ga0.78As HFET gate recess for the realization of linear power amplifier

X. Hue, B. Boudart, Y. Crosnier

8th European Workshop on Heterostructure Technology (HETECH), 1998, Cardiff, United Kingdom. ⟨hal-01654297⟩

• Communication dans un congrès

Simulation globale du fonctionnement à 94 GHz d'un oscillateur ATT pulsé, basée sur le couplage de modèles physique, électrique, thermique et électromagnétique

Christophe Dalle, Stéphane Beaussart, Marie-Renée Friscourt

Workshop MTT, chapitre français, 1998, La Rochelle, France. ⟨hal-00005310⟩

• Article dans une revue

Triol sol-gel route for preparing PZT thin films

S. Arscott

Ceramic Transactions, 1998. ⟨hal-02348121⟩