Publicaciones

• Communication dans un congrès

Accuracy and Convergence Properties of a One-Dimensional Numerical Non-Quasi-Static MOSFET’s Model for Circuit Simulation

E. Robilliart, Emmanuel Dubois

Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 1996, Tokyo, Japan. pp.179-180, ⟨10.1109/SISPAD.1996.865328⟩. ⟨hal-04249094⟩

• Article dans une revue

Comment on "Hot-Hole induced negative oxide charges in N-MOSFET's

Dominique Vuillaume, A. Bravaix, D. Goguenheim, J.-C. Marchetaux, A. Boudou

For the original article see ibid., vol. 42, p. 1473 (1995). The commenters state that a clear proof of the generation of electron traps under hot-hole injections and a clear distinction from the effect of stress-induced interface states have been given by them in a paper (see ibid., vol. 40, p....

Comment on "Hot-Hole induced negative oxide charges in N-MOSFET's". IEEE Transactions on Electron Devices, 1996, IEEE Transaction on Electron devices, 43 (9), pp.1473-1477. ⟨10.1109/16.535337⟩. ⟨hal-03022993⟩

• Thèse

Application de l'approche de la réponse impulsionnelle à la modélisation du rayonnement de transducteurs acoustiques de structure arbitraire, Application of the impulse response approach to the radiation modelling of arbitrarily structured transducers array

Khalid Sbai

Le travail effectué dans ce mémoire a conduit à l'élaboration d'un logiciel de simulation "DREAM" qui permet de calculer le champ acoustique rayonné par des transducteurs de surfaces planes et quasi-planes dont les ouvertures peuvent être structurées de manière quasi arbitraires..., The work done in this thesis has led to the development of simulation software "DREAM" to calculate the sound field radiated by transducers of flat surfaces and quasi-plane whose openings can be structured in an almost arbitrary. It takes into account all the characteristic parameters of...

Acoustique [physics.class-ph]. Université de Valenciennes et du Hainaut-Cambresis, 1996. Français. ⟨NNT : 1996VALE0023⟩. ⟨tel-00687979⟩

• Article dans une revue

Small- and large-signal measurements of low-temperature GaAs FETs

B. Boudart, Christophe Gaquière, S. Trassaert, Didier Theron, B. Splingart, M. Lipka, E. Kohn

Low-temperature (LT) GaAs FETs have been realized for high I × V products. They have been extensively characterized under dc, rf, pulsed, and large-signal conditions. The results are analyzed and related to the device structure. The electrical passivant role of the LT GaAs has been demonstrated....

Microwave and Optical Technology Letters, 1996, 12 (2), pp.57 - 59. ⟨10.1002/(SICI)1098-2760(19960605)12:23.0.CO;2-M⟩. ⟨hal-01647683⟩

• Article dans une revue

Surface and interface optical waves in superlattices: transverse electric localized and resonant modes

M Bah, Abdellatif Akjouj, E Boudouti, B Djafari-Rouhani, Leonard Dobrzynski

Journal of Physics: Condensed Matter, 1996, 8 (23), pp.4171-4188. ⟨10.1088/0953-8984/8/23/010⟩. ⟨hal-04070050⟩

• Article dans une revue

Acoustic scattering by a wire deposited on a planar surface

A. Khelif, B.Djafari Rouhani, Leonard Dobrzynski

Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 1996, 352-354, pp.1038-1042. ⟨10.1016/0039-6028(95)01323-7⟩. ⟨hal-04070961⟩

• Article dans une revue

Configuration effects of the existence conditions for interface bilayer spin waves

H. Puszkarski, R. Jozefowicz, B. Kołodziejczak, Abdellatif Akjouj, B. Djafari-Rouhani, Leonard Dobrzynski

Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 1996, 352-354, pp.914-918. ⟨10.1016/0039-6028(95)01285-0⟩. ⟨hal-04070898⟩

• Communication dans un congrès

Physical MOSFET’s model for analog circuit design: application to cur¬rent copier based architectures

Emmanuel Dubois, E. Robilliart

Proc. of the International Symposium on Circuits and Systems IEEE- ISCAS’96, May 1996, Atlanta (GA), United States. ⟨hal-04249107⟩

• Article dans une revue

Emergence and inflection angles in the configurational dependence of interface bilayer spin wave energies

H. Puszkarski, R. Józefowicz, B. Kolodziejczak, Abdellatif Akjouj, B. Djafari-Rouhani, Leonard Dobrzynski

physica status solidi (b), 1996, 194 (2), pp.731-745. ⟨10.1002/pssb.2221940229⟩. ⟨hal-04070940⟩

• Article dans une revue

Effects of dislocations on transport properties of two dimensional electron gas. I. Transport at zero magnetic field

Z. Bougrioua, J. Farvacque, D. Ferre

This paper presents a theoretical analysis of the scattering potentials associated with dislocations in the case of two dimensional electron gas. It is shown that dislocations act mainly on the free carrier mobility through the potential associated with their linear electric charge and not with...

Journal of Applied Physics, 1996, 79 (3), pp.1536-1545. ⟨10.1063/1.360997⟩. ⟨hal-02415041⟩