Publicaciones

• Communication dans un congrès

Liaison Opto-Hyperfréquence

C. Sion, Ian Cayrefourcq, Vincent Magnin

Outre la largeur de bande instantanée, une des caractéristiques principales des antennes réseaux large bande est la couverture spatiale. Cette dernière est définie par notre habilité à orienter le faisceau émergeant de l’antenne et donc à notre aptitude à synthétiser des lois de retards. La...

Journée Nationale du Réseau doctoral en Microtechnologies, 1996, Lyon, France. ⟨hal-04458196⟩

• Communication dans un congrès

Hot-Carrier Noise under Degenerate Conditions

P. Tadyszak, A. Cappy, Francois Danneville, L. Reggiani, L. Varani, L. Rota

8th International Conference on Hot Carriers in Semiconductors, K. Hess, J. P. Leburton and U. Ravaioli, 1996, Chicago, United States. pp.413, ⟨10.1007/978-1-4613-0401-2⟩. ⟨hal-02436152⟩

• Article dans une revue

GaAs MESFET injection planar Gunn diode optronic applications

F. Driouch, D. Cailleu, M.R. Friscourt, Christophe Dalle

Electronics Letters, 1996, 32, pp.2274-2276. ⟨hal-00005301⟩

• Article dans une revue

Modeling of microwave top illuminated PIN photodetector under very high optical power

Joseph Harari, G.H. Jin, F. Journet, J. van de Casteele, Jean-Pierre Vilcot, Christophe Dalle, M.R. Friscourt, Didier Decoster

IEEE Transactions on Microwave Theory and Techniques, 1996, 44, pp.1484-1487. ⟨hal-00005338⟩

• Communication dans un congrès

-low temperature GaAs/GaInP FET: device technology and characterization

Didier Theron, B. Boudart, Mohamed Zaknoune, Francis Mollot, Y. Druelle, Henri Gérard, Georges Salmer, M. Lipka, R. Westphalen, Erhard Kohn

Workshop on non-stoichiometric GaAs and related materials, 1996, Santa Barbara, United States. ⟨hal-01654286⟩

• Communication dans un congrès

Efficient non-quasi-static MOSFETs model for circuit simulation

Emmanuel Dubois, E. Robilliart

International Electron Devices Meeting, Dec 1995, Washington, United States. pp.945-948, ⟨10.1109/IEDM.1995.499372⟩. ⟨hal-04248390⟩

• Communication dans un congrès

Analysis of the charge injection in MOS analog switches using physical models

E. Robilliart, Emmanuel Dubois

Proc. of the International Semiconductor Device Research Symposium ISDRS’95, Dec 1995, Charlottesville, United States. ⟨hal-04249104⟩

• Communication dans un congrès

Second and third order one-dimensional non-quasi-static bipolar transistor models

E. Robilliart, Emmanuel Dubois

Proc. of the International Semiconductor Device Research Symposium ISDRS’95, Dec 1995, Charlottesville, United States. ⟨hal-04249098⟩

• Article dans une revue

Analysis of the propagation of plane acoustic waves in passive periodic materials using the finite element method

Philippe Langlet, Anne-Christine Hladky, Jean‐noël Decarpigny

The finite element approach has been previously used, with the help of the ATILA code, to model the scattering of acoustic waves by single or doubly periodic passive structures ͓A. C. Hladky-Hennion et al., J. Acoust. Soc. Am. 90, 3356-3367 ͑1991͔͒. This paper presents a new extension of this...

Journal of the Acoustical Society of America, 1995, 98 (5), pp.2792-2800. ⟨10.1121/1.413244⟩. ⟨hal-03300156⟩

• Article dans une revue

Auger and Coulomb Charging Effects in Semiconductor Nanocrystallites

Christophe Delerue, Michel Lannoo, Guy Allan, Évelyne Martin, Irina Mihalcescu, Jean-Claude Aimé Vial, Robert Romestain, F. Muller, Ahmad Bsiesy

Theoretical and experimental results are presented providing evidence for fast Auger recombination in silicon nanocrystallites. Calculations give nonradiative lifetimes in the 1 ns range. Luminescence experiments on porous silicon exhibit a saturation at high excitation power. The Auger effect...

Physical Review Letters, 1995, 75 (11), pp.2228 - 2231. ⟨10.1103/PhysRevLett.75.2228⟩. ⟨hal-01628592⟩