Publicaciones

• Article dans une revue

Auger and Coulomb Charging Effects in Semiconductor Nanocrystallites

Christophe Delerue, Michel Lannoo, Guy Allan, Évelyne Martin, Irina Mihalcescu, Jean-Claude Aimé Vial, Robert Romestain, F. Muller, Ahmad Bsiesy

Theoretical and experimental results are presented providing evidence for fast Auger recombination in silicon nanocrystallites. Calculations give nonradiative lifetimes in the 1 ns range. Luminescence experiments on porous silicon exhibit a saturation at high excitation power. The Auger effect...

Physical Review Letters, 1995, 75 (11), pp.2228 - 2231. ⟨10.1103/PhysRevLett.75.2228⟩. ⟨hal-01628592⟩

• Article dans une revue

Lateral band gap modulation by controlled elastic relaxation of strained multiquantum well structures on InP

Jean -Louis Leclercq, Pierre Viktorovich, X. Letartre, M. Nuban, Michel Gendry, T. Benyatou, G. Guillot, G. Fierling, C. Priester

Applied Physics Letters, 1995, 67 (9), pp.1301-1303. ⟨10.1063/1.114404⟩. ⟨hal-02119492⟩

• Ouvrages

HELENA - Hemt Electrical Properties and Noise Analysis Software and user's manual (Microwave Software Library)

H. Happy, A. Cappy

Artech House, pp.Disk edition, 1995. ⟨hal-00132555⟩

• Article dans une revue

Brillouin-zone mapping of the existence conditions for interface bilayer spin waves

H. Puszkarski, Abdellatif Akjouj, B. Djafari-Rouhani, Leonard Dobrzynski

Physical Review B, 1995, 51 (22), pp.16008-16015. ⟨10.1103/PhysRevB.51.16008⟩. ⟨hal-04070291⟩

• Article dans une revue

Saturation and voltage quenching of porous-silicon luminescence and the importance of the Auger effect

Irina Mihalcescu, Jean-Claude Aimé Vial, Ahmad Bsiesy, F. Muller, Robert Romestain, Évelyne Martin, Christophe Delerue, Michel Lannoo, Guy Allan

Two important observations for porous silicon, the saturation and the voltage selective quenching of photoluminescence, are presented. Their similarities are pointed out and discussed in two phenomenological models: the saturation of the absorption and an Auger effect. The consequences of carrier...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1995, 51 (24), pp.17605 - 17613. ⟨10.1103/PhysRevB.51.17605⟩. ⟨hal-01628598⟩

• Article dans une revue

Electronic surface states in GaAs/Ga1 − xAlxAs superlattice: effect of surface location

M Stȩślicka, Róża Kucharczyk, Eh El Boudouti, B Djafari-Rouhani, Ml Bah, Abdellatif Akjouj, Leonard Dobrzynski

Vacuum, 1995, 46 (5-6), pp.459-463. ⟨10.1016/0042-207X(94)00106-5⟩. ⟨hal-04070869⟩

• Article dans une revue

Influence of the gate leakage current on the noise performance of MESFETs and MODFETs

Francois Danneville, Gilles Dambrine, Henri Happy, Patrick Tadyszak, A. Cappy

Solid-State Electronics, 1995, 38 (5), pp.1081-1087. ⟨10.1016/0038-1101(95)98678-V⟩. ⟨hal-03612883⟩

• Article dans une revue

Surface and interface s-polarized optical waves in superlattices

Abdellatif Akjouj, Ml Bah, Ehel Boudouti, B Djafari-Rouhani, Leonard Dobrzynski

Vacuum, 1995, 46 (5-6), pp.621-624. ⟨10.1016/0042-207X(94)00144-8⟩. ⟨hal-04070921⟩

• Article dans une revue

The influence of capping layers on surface phonon polaritons in superlattices

M Bah, Abdellatif Akjouj, E Boudouti, B Djafari-Rouhani, Leonard Dobrzynski

Journal of Physics: Condensed Matter, 1995, 7 (18), pp.3445-3452. ⟨10.1088/0953-8984/7/18/008⟩. ⟨hal-04070488⟩

• Communication dans un congrès

Single Barrier Varactors and Resonant Tunneling Diodes for Millimeter Waves Applications

Patrick Mounaix, Eric Lheurette, Francis Mollot, Patrice Salzenstein, Didier Lippens

InGaAs/InAlAs/AlAs Single Barrier Varacors (SBV's) and InGaAs/AlAs double barrier Resonant Tunneling Diodes (RTD's) were integrated in a planar configuration. The epilayers, designed for millimeter-wave applications, were grown by gas sources MBE and processed in a two step mesa...

Proceeding of the European Space Agency, ESTEC. workshop, Noordwijk, Netherlands, 5-7 December, 1995, 1995, Noordwijk, Netherlands. pp.1-10. ⟨hal-00076912⟩