Publicaciones

• Article dans une revue

Bulk and surface phonon polaritons in three-layer superlattices

J. Mendialdua, A. Rodriguez, M. More, Abdellatif Akjouj, Leonard Dobrzynski

Physical Review B, 1994, 50 (19), pp.14605-14608. ⟨10.1103/PhysRevB.50.14605⟩. ⟨hal-04070062⟩

• Article dans une revue

Complete acoustic band gaps in periodic fibre reinforced composite materials: the carbon/epoxy composite and some metallic systems

Jerome O. Vasseur, Bahram Djafari-Rouhani, L. Dobrzynski, M Kushwaha, P Halevi

Journal of Physics: Condensed Matter, 1994, 6 (42), pp.8759-8770. ⟨10.1088/0953-8984/6/42/008⟩. ⟨hal-03301159⟩

• Communication dans un congrès

Accuracy of series resistances extraction schemes for polysilicon bipolar transistors

Emmanuel Dubois, P.-H. Bricout, E. Robilliart

IEEE Bipolar/BiCMOS Circuits and Technology Meeting, Oct 1994, Minneapolis, United States. pp.148-151, ⟨10.1109/BIPOL.1994.587883⟩. ⟨hal-04248381⟩

• Article dans une revue

Electrical Characterization of Delta Doped Gallium Arsenide, Caracterisation d'AsGa à plans de dopage

S. Arscott, M. Missous, L. Dobaczewski, P. Harness, Duncan Kennedy Maude, J. Portal

Electrical Characterization of Delta Doped Gallium Arsenide, Caracterisation d'AsGa à plans de dopage

MRS Online Proceedings Library, 1994, 281, ⟨10.1557/PROC-281-19⟩. ⟨hal-02348216⟩

• Communication dans un congrès

Series Resistances of Polysilicon Emitter Bipolar Transistors: Simulation and Measurement

Emmanuel Dubois, Bricout Paul-Henri, E. Robilliart

ESSDERC '94: 24th European Solid State Device Research Conference, Sep 1994, Edinburg, United Kingdom. ⟨hal-04248378⟩

• Article dans une revue

HIGH-FREQUENCY NOISE AND DIFFUSION-COEFFICIENT OF HOT-ELECTRONS IN BULK AL0.25GA0.75AS

M. Demurcia, E. Richard, D. Gasquet, J. P. Dubuc, J. Vanbremeersch, J. Zimmermann

We present experimental results of hot electron noise in Si doped Al0.25Ga0.75As test structures using pulsed high-frequency noise measurements. Noise temperature and longitudinal diffusion coefficient as functions of field strength are compared with those of Si doped GaAs. We find significant...

Solid-State Electronics, 1994, 37 (8), pp.1477-1483. ⟨10.1016/0038-1101(94)90155-4⟩. ⟨hal-00322162⟩

• Article dans une revue

Electronic dielectric response of composite materials: application to two-dimensional electronic transport

J.-L Farvacque, Z. Bougrioua

We derive the formal expression for the dielectric response of composite semiconducting materials and then show that the inverse dielectric function can be approximately deduced in the particular case of a two-dimensional electron gas (2DEG) embedded between two media. In given situations, these...

Semiconductor Science and Technology, 1994, 9 (7), pp.1324-1331. ⟨10.1088/0268-1242/9/7/005⟩. ⟨hal-02906467⟩

• Communication dans un congrès

Short channel immunity and current drive capabilities of recessed mosfets in the sub-50 mn regime

Emmanuel Dubois, P.H. Bricout

52nd Annual Device Research Conference, Jun 1994, Boulder, United States. pp.85-86, ⟨10.1109/DRC.1994.1009426⟩. ⟨hal-04248364⟩

• Article dans une revue

Effect of curvature on interfacial segregation: Electronic contribution to the point defect/interface binding energy

Jerome O. Vasseur, P. Deymier

Interface Science, 1994, 2 (2), pp.147-152. ⟨10.1007/BF01184509⟩. ⟨hal-03301157⟩

• Article dans une revue

Kronig-Penney-type model for semi-infinite superlattices: I. A comment on surface-state energy expression

M Steslicka, Róża Kucharczyk, Leonard Dobrzynski, B Djafarirouhani, E Elboudouti, W Jaskolski

Progress in Surface Science, 1994, 46 (2-3), pp.219-223. ⟨10.1016/0079-6816(94)90081-7⟩. ⟨hal-04070499⟩