Publicaciones

• Article dans une revue

Epitaxial La_0.5Sr_0.5MnO_3‐δ Bipolar Memristive Devices with Tunable and Stable Multilevel States

Carlos Moncasi, Gauthier Lefèvre, Quentin Villeger, Laetitia Rapenne, Thoai‐khanh Khuu, Fabrice Wilhelm, Andrei Rogalev, Carmen Jiménez, Mónica Burriel

Valence change memories are novel data storage devices in which the resistance is determined by a reversible redox reaction triggered by voltage. The oxygen content and mobility within the active materials of these devices play a crucial role in their performance. Therefore, materials which present...

• Article dans une revue

Infinite ergodicity in generalized geometric Brownian motions with nonlinear drift

Stefano Giordano, Fabrizio Cleri, Ralf Blossey

Geometric Brownian motion is an exemplary stochastic processes obeying multiplicative noise, with widespread applications in several fields, e.g. in finance, in physics and biology. The definition of the process depends crucially on the interpretation of the stochastic integrals which involves the...

Physical Review E , 2023, 107 (4), pp.044111. ⟨10.1103/PhysRevE.107.044111⟩. ⟨hal-04086877⟩

• Communication dans un congrès

Solving the Job Shop Scheduling Problem: QUBO model and Quantum Annealing

Riad Aggoune, Samuel Deleplanque

Quantum optimization which is the use of quantum computers and algorithms for solving complex optimization problems, is one of the topics in quantum computing with the highest potential. Two types of approaches are generally used to solve combinatorial optimization problems with quantum computers:...

Emerging optimization methods: from metaheuristics to quantum approaches, Apr 2023, Troyes, France. ⟨hal-04037312⟩

• Communication dans un congrès

Quantum Computing for solving the 3SAT problem by reduction to the MIS combinatorial optimization problem

Samuel Deleplanque

This work tries to anticipate the main issues related to the D-Wave machines topology for solving the 3Sat problem. The polynomial reduction to the Maximum Independent Set Problem (MIS) is employed for solving a 3Sat instance to furnish a less dense graph to the machine. These analog quantum...

Emerging optimization methods: from metaheuristics to quantum approaches, Apr 2023, Troyes, France. ⟨hal-04037331⟩

• Communication dans un congrès

Impact of nanoscale faceting on the electrical properties of in-plane InGaAs/Ga(As)Sb tunnel junctions grown by selective area MBE

Alexandre Bucamp, Christophe Coinon, Sylvie Lepilliet, David Troadec, Gilles Patriarche, X. Wallart, L. Desplanque

21 st European Workshop on Molecular Beam Epitaxy (EuroMBE 2023), Apr 2023, Madrid, Spain, Apr 2023, Madrid, Spain. ⟨hal-04332199⟩

• Communication dans un congrès

Selective Area Growth of in-plane In0.5Ga0.5P nanowires on GaAs (111)B substrate by molecular beam epitaxy

Clément Barbot, Christophe Coinon, X. Wallart, B. Grandidier, L. Desplanque

21st European Workshop on Molecular Beam Epitaxy, EuroMBE 2023, Apr 2023, Madrid, Spain. ⟨hal-04475475⟩

• Communication dans un congrès

Key parameters for GaP(111)B surface preparation and Selenium passivation

N. Chapuis, C. Sthioul, Christophe Coinon, L. Desplanque, X. Wallart

21 st European Workshop on Molecular Beam Epitaxy (EuroMBE 2023), Apr 2023, Madrid, Spain. ⟨hal-04118199⟩

• Article dans une revue

Effect of Surface Pinning Fields on the Properties of the Heisenberg Ferromagnet

Leonard Dobrzynski, D. Mills

Physical Review, 2023, 186 (2), pp.538-548. ⟨10.1103/PhysRev.186.538⟩. ⟨hal-04070313⟩

• Article dans une revue

Effects of GaN channel downscaling in AlGaN–GaN high electron mobility transistor structures grown on AlN bulk substrate

Reda Elwaradi, Jash Mehta, Thi Huong Ngo, Maud Nemoz, Catherine Bougerol, Farid Medjdoub, Yvon Cordier

In this work, two series of AlGaN/GaN/AlN high electron mobility transistor (HEMT) heterostructures have been grown by molecular beam epitaxy on AlN bulk substrates. The effects of reduction in the GaN channel thickness as well as the AlGaN barrier thickness and composition on structural and...

Journal of Applied Physics, 2023, 133 (14), pp.145705. ⟨10.1063/5.0147048⟩. ⟨hal-04086494⟩

• Article dans une revue

Improving the intrinsic conductance of selective area grown in-plane InAs nanowires with a GaSb shell

Wijden Khelifi, Christophe Coinon, M Berthe, David Troadec, G. Patriarche, X. Wallart, B Grandidier, L Desplanque

The nanoscale intrinsic electrical properties of in-plane InAs nanowires grown by selective area epitaxy are investigated using a process-free method involving a multi-probe scanning tunneling microscope. The resistance of oxide-free InAs nanowires grown on an InP(111) B substrate and the...

Nanotechnology, 2023, 34 (26), pp.265704. ⟨10.1088/1361-6528/acc810⟩. ⟨hal-04070480⟩