Publicaciones

• Article dans une revue

Gate recessing optimization of GaAs/Al0.22Ga0.78As heterojunction field effect transistor using citric acid/hydrogen peroxide/ammonium hydroxide for power applications

X. Hue, B. Boudart, Y. Crosnier

The etching characteristics of GaAs and Al0.22Ga0.78AsAl0.22Ga0.78As in citric acid/hydrogen peroxide/ammonium hydroxide etching solution were studied. The selectivity of GaAs to Al0.22Ga0.78AsAl0.22Ga0.78As was as high as 200 at 20 °C20 °C (510 at 0 °C0 °C) by optimizing the pHpH and citric acid/...

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, 1998, 16 (5), pp.2675-2679. ⟨10.1116/1.590255⟩. ⟨hal-01644716⟩

• Communication dans un congrès

A multimedia educative tool concerning microwave circuits, based on a physical approach of their time-domain operation

M.R. Friscourt, Christophe Dalle

2nd European Workshop on Microelectronics Education, 1998, Noordwijkerhout, Netherlands. ⟨hal-00005309⟩

• Article dans une revue

Noise modeling in MESFET and HEMT mixers using a uniform noisy line model

Francois Danneville, Gilles Dambrine, A. Cappy

IEEE Transactions on Electron Devices, 1998, 45 (10), pp.2207-2212. ⟨10.1109/16.725255⟩. ⟨hal-03612813⟩

• Article dans une revue

A new extrinsic equivalent circuit of HEMT's including noise for millimeter-wave circuit design

Gilles Dambrine, J.-M. Belquin, Francois Danneville, A. Cappy

IEEE Transactions on Microwave Theory and Techniques, 1998, 46 (9), pp.1231-1236. ⟨10.1109/22.709461⟩. ⟨hal-03612815⟩

• Article dans une revue

Surface spinodal decomposition in low temperature Al0.48In0.52As grown on InP(001) by molecular beam epitaxy

G. Grenet, Michel Gendry, M. Oustric, Y. Robach, L. Porte, G. Hollinger, O. Marty, M. Pitaval, C. Priester

The clustering development for lattice-matched A104s ln0.52 As grown on (001) oriented InP substrates by molecular beam epitaxy (MBE) has been investigated by ex-situ transmission electron microscopy (TEM) and in-situ scanning tunnelling microscopy (STM). For a growth temperature of 450°C, a V/III...

Applied Surface Science, 1998, 123, pp.324 - 328. ⟨10.1016/S0169-4332(97)00522-9⟩. ⟨hal-02194425⟩

• Communication dans un congrès

Study of the Ti/Al/Ni/Au ohmic contact on n-GaN for high temperature applications

S. Trassaert, B. Boudart, Xavier Wallart, Didier Theron, Y. Crosnier

8th European Workshop on Heterostructure Technology (HETECH), 1998, Cardiff, United Kingdom. ⟨hal-01654296⟩

• Article dans une revue

Noise and transit time in ungated FET structures

J. Mateos, T. Gonzalez, D. Pardo, P. Tadyszak, Francois Danneville, A. Cappy

IEEE Transactions on Electron Devices, 1997, 44 (12), pp.2128-2135. ⟨10.1109/16.644625⟩. ⟨hal-03612839⟩

• Communication dans un congrès

Edge-coupled InGaAs/InP phototransistors for microwave radio fibre links

J.-P. Vilcot, Vincent Magnin, J. van de Casteele, J. Harari, J.-P. Gouy, B. Bellini, D. Decoster

IEEE MTT/ED/AP/LEO Societies Joint Chapter United Kingdom and Republic of Ireland Section. 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications EDMO, Nov 1997, London, United Kingdom. pp.163-168, ⟨10.1109/EDMO.1997.668592⟩. ⟨hal-04461601⟩

• Communication dans un congrès

Sol-gel synthesis of PZT thin films

S. Arscott

IEE Colloquium on Electro-Technical Ceramics - Processing, Properties and Applications, Nov 1997, London, United Kingdom. pp.5-5, ⟨10.1049/ic:19971051⟩. ⟨hal-02348151⟩

• Chapitre d'ouvrage

Theory of the radiative and non radiative processes in silicon nanocrystallites

Christophe Delerue, Guy Allan, Michel Lannoo

This chapter describes the theory of radiative and nonradiative processes in Silicon (Si) nanocrystallites. Near threshold optical transitions in an indirect bandgap material like silicon have very small oscillator strength preventing its use in optoelectronics. An interesting field of research is...

WILLARDSON R.K., WEBER E., LOCKWOOD D. Light emissions in silicon : from physics to devices, Academic Press, London, UK, pp.253, 1997, ⟨10.1016/S0080-8784(08)62505-3⟩. ⟨hal-00132030⟩