Publicaciones

• Article dans une revue

Anomalous voltage overshoot during turn-off of thin-film n-channel SOI MOSFETs

Emmanuel Dubois, G.G. Shahidi, M.R. Scheuermann

An anomalous output voltage overshoot observed during the turn-off of single short-channel thin-film silicon-on-insulator SOI n-MOSFETs is reported. The parasitic floating-base bipolar device, triggered by impact ionization, is shown to be responsible for this effect. Because switching occurs over...

IEEE Electron Device Letters, 1993, 14 (4), pp.164-166. ⟨10.1109/55.215163⟩. ⟨hal-04246691⟩

• Article dans une revue

A coupled study by floating-gate and charge-pumping techniques of hot carrier-induced defects in submicrometer LDD n-MOSFET's

Dominique Vuillaume, Marchetaux J.-C., Lippens P.-E., Bravaix A., Boudou A.

The creation of defects by hot-carrier effect in submicrometer (0.85µm) LDD n-MOSFETs is analyzed by the floating-gate and the charge-pumping techniques. It is emphasized that the floating-gate technique is an attractive tool for characterizing the oxide traps located in the drain-gate overlap...

IEEE Transactions on Electron Devices, 1993, 40 (4), ⟨10.1109/16.202790⟩. ⟨hal-03022897⟩

• Article dans une revue

Theoretical aspects of solute segregation to high-angle grain boundaries

J.O. Vasseur, P.A. Deymier, B. Djafari-Rouhani, Leonard Dobrzynski

Interface Science, 1993, 1 (1), ⟨10.1007/BF00203265⟩. ⟨hal-04070509⟩

• Article dans une revue

Theoretical aspects of solute segregation to high-angle grain boundaries

Jerome O. Vasseur, P.A. Deymier, Bahram Djafari-Rouhani, L. Dobrzynski

Interface Science, 1993, 1 (1), ⟨10.1007/BF00203265⟩. ⟨hal-03301126⟩

• Communication dans un congrès

Growth of low temperature GaAs on GaAs under different conditions

Didier Theron, B. Boudart, R. Westphalen, Xavier Wallart, Y. Druelle

3rd European Workshop on Heterostructure Technology (HETECH), 1993, Villeneuve d'Ascq, France. ⟨hal-01654281⟩

• Article dans une revue

Helena: A friendly software for calculating the DC, AC, and noise performance of HEMTs

Henri Happy, Gilles Dambrine, Jocelyn Alamkan, Francois Danneville, François Kaptche-Tagne, A. Cappy

International Journal of Microwave and Millimeter-Wave Computer-Aided Engineering, 1993, 3 (1), pp.14-28. ⟨10.1002/mmce.4570030105⟩. ⟨hal-03317740⟩

• Communication dans un congrès

The theory of rare-earth impurities in semiconductors

Christophe Delerue, Michel Lannoo

MRS 1993 Spring Meeting, 1993, San Francisco, United States. ⟨hal-03316744⟩

• Chapitre d'ouvrage

DISPERSION OF LONGITUDINAL ULTRASONIC WAVE VELOCITY THROUGH CARBON-EPOXY COMPOSITE MATERIALS.

Mohamed Ourak, Mohammadi Ouaftouh, Jean-Michel Rouvaen, Bertrand Nongaillard, C. Bruneel

Ultrasonics International 93, Elsevier, pp.435-438, 1993, ⟨10.1016/b978-0-7506-1877-9.50108-6⟩. ⟨hal-03811463⟩

• Communication dans un congrès

Temperature measurements of LT-GaAs diodes

R. Westphalen, B. Boudart, Didier Theron, Xavier Wallart, Y. Druelle, Y. Crosnier

European Materials Research Society, 1993, Strasbourg, France. ⟨hal-01648117⟩

• Article dans une revue

Luminescence of silicon crystallites

C. Delerue, E. Martin, Jean-Francois Lampin, G. Allan, M. Lannoo

The physical origin of the red and infrared light emissions from porous silicon are examined. The red band can come from the direct radiative recombination of excitons in silicon crystallites. The infrared emission can be explained by their recombination on silicon dangling bonds. Finally, the...

Journal de Physique IV Proceedings, 1993, 03 (C5), pp.C5-359-C5-362. ⟨10.1051/jp4:1993575⟩. ⟨jpa-00251662⟩