Publicaciones

• Communication dans un congrès

Influence of the gate leakage current on the noise performance of MESFETs and MODFETs

Francois Danneville, Gilles Dambrine, H. Happy, A. Cappy

1993 IEEE MTT-S International Microwave Symposium Digest, Jun 1993, Atlanta, United States. pp.373-376 vol.1, ⟨10.1109/mwsym.1993.276800⟩. ⟨hal-03317746⟩

• Communication dans un congrès

Theory of the luminescence of porous silicon

Christophe Delerue, Michel Lannoo, Guy Allan

E-MRS Spring Meeting, May 1993, Strasbourg, France. ⟨hal-03316745⟩

• Article dans une revue

Raman scattering from folded acoustic phonons and photoluminescence in multilayer GaAs-AlAs superlattices

D. Lockwood, R. Devine, A. Rodriguez, J. Mendialdua, B. Djafari Rouhani, Leonard Dobrzynski

Physical Review B, 1993, 47 (20), pp.13553-13560. ⟨10.1103/PhysRevB.47.13553⟩. ⟨hal-04070323⟩

• Communication dans un congrès

Transport simulation in submicron MOSFETS by coupling Monte Carlo and Drift Diffusion

Bricout Paul-Henri, Emmanuel Dubois, Renaud Fauquembergue

Proc. of Nasecode IX, Apr 1993, Copper Mountain, United States. ⟨hal-04249113⟩

• Article dans une revue

Anomalous voltage overshoot during turn-off of thin-film n-channel SOI MOSFETs

Emmanuel Dubois, G.G. Shahidi, M.R. Scheuermann

An anomalous output voltage overshoot observed during the turn-off of single short-channel thin-film silicon-on-insulator SOI n-MOSFETs is reported. The parasitic floating-base bipolar device, triggered by impact ionization, is shown to be responsible for this effect. Because switching occurs over...

IEEE Electron Device Letters, 1993, 14 (4), pp.164-166. ⟨10.1109/55.215163⟩. ⟨hal-04246691⟩

• Article dans une revue

A coupled study by floating-gate and charge-pumping techniques of hot carrier-induced defects in submicrometer LDD n-MOSFET's

Dominique Vuillaume, Marchetaux J.-C., Lippens P.-E., Bravaix A., Boudou A.

The creation of defects by hot-carrier effect in submicrometer (0.85µm) LDD n-MOSFETs is analyzed by the floating-gate and the charge-pumping techniques. It is emphasized that the floating-gate technique is an attractive tool for characterizing the oxide traps located in the drain-gate overlap...

IEEE Transactions on Electron Devices, 1993, 40 (4), ⟨10.1109/16.202790⟩. ⟨hal-03022897⟩

• Communication dans un congrès

Growth of low temperature GaAs on GaAs under different conditions

Didier Theron, B. Boudart, R. Westphalen, Xavier Wallart, Y. Druelle

3rd European Workshop on Heterostructure Technology (HETECH), 1993, Villeneuve d'Ascq, France. ⟨hal-01654281⟩

• Communication dans un congrès

Temperature measurements of LT-GaAs diodes

R. Westphalen, B. Boudart, Didier Theron, Xavier Wallart, Y. Druelle, Y. Crosnier

European Materials Research Society, 1993, Strasbourg, France. ⟨hal-01648117⟩

• Article dans une revue

Theoretical aspects of solute segregation to high-angle grain boundaries

Jerome O. Vasseur, P.A. Deymier, Bahram Djafari-Rouhani, L. Dobrzynski

Interface Science, 1993, 1 (1), ⟨10.1007/BF00203265⟩. ⟨hal-03301126⟩

• Article dans une revue

Helena: A friendly software for calculating the DC, AC, and noise performance of HEMTs

Henri Happy, Gilles Dambrine, Jocelyn Alamkan, Francois Danneville, François Kaptche-Tagne, A. Cappy

International Journal of Microwave and Millimeter-Wave Computer-Aided Engineering, 1993, 3 (1), pp.14-28. ⟨10.1002/mmce.4570030105⟩. ⟨hal-03317740⟩