Publicaciones
Affichage de 16071 à 16080 sur 16549
High Q InP-based varactor diodes
T. David, P. Mounaix, X. Melique, F. Mollot, O. Vanbésien, M. Chaubet, D. Lippens
Proceedings of the 11th International Symposium on Space Terahertz Technology, 2000, Ann Arbor, MI, United States. ⟨hal-00158223⟩
Détection par micro-ondes de défauts dans les matériaux diélectriques
D. Glay, T. Lasri, A. Mamouni, Y. Leroy
6èmes Journées Caractérisation Microondes et Matériaux, JCMM 2000, 2000, Paris, France. ⟨hal-00158162⟩
Towards terahertz circuits via InP micromachining techniques
S. Arscott, T. David, X. Melique, P. Mounaix, D. Lippens
2000, pp.561-564. ⟨hal-00158203⟩
Resonant and localized electromagnetic modes in finite superlattices
M. Lahlaouti, Abdellatif Akjouj, B. Djafari-Rouhani, Leonard Dobrzynski
Physical Review B, 2000, 61 (3), pp.2059-2064. ⟨10.1103/PhysRevB.61.2059⟩. ⟨hal-04070077⟩
Finite element modeling of damping using piezoelectric materials
Anne-Christine Hladky, C. Granger
2000, pp.64-65. ⟨hal-00157823⟩
Deep traps related effects in GaN MESFET's grown on saphire substrate
A. Chini, G. Meneghesso, E. Zanoni, M. Manfredi, M. Pavesi, B. Boudart, Christophe Gaquière
10th European Workshop on Heterostructure Technology, HeTech 2000, 2000, Ulm, Germany. ⟨hal-00159037⟩
Dry etching for gate recessing on AlGaN/GaN HEMTs
Y. Guhel, B. Boudart, M.A. Poisson, Jean-Claude de Jaeger
10th European Workshop on Heterostructure Technology, HeTech 2000, 2000, Ulm, Germany. ⟨hal-00159034⟩
GaN MESFETs for power and high temperature applications
B. Boudart, S. Trassaert, Christophe Gaquière, D. Theron, Y. Crosnier, François Huet, M.A. Poisson, I. Daumiller, E. Kohn
NearEst Miniworkshop on Advances in the Wide Bandgap Electronics and Opto-Electronics, 2000, Padova, Italy. ⟨hal-00159032⟩
Raman characterization of GaN synthetised by N implantation in GaAs substrate
B. Boudart, J.C. Pesant, Jean-Claude de Jaeger, P.A. Dhamelincourt
Journal of Raman Spectroscopy, 2000, 31, pp.615-618. ⟨hal-00158978⟩