Publicaciones

• Communication dans un congrès

Analysis of the Punchthrough Effect in Walled Emitter Bipolar Transistors

Emmanuel Dubois

A detailed study of the punchthrough formation mechanism induced by the walled emitter configuration is proposed. Efficient process and device simulation tools -IMPACT- have been used and results have been successfully compared to measured characteristics.

ESSDERC '89: 19th European Solid State Device Research Conference, Sep 1989, Berlin (DE), Germany. ⟨10.1007/978-3-642-52314-4_166⟩. ⟨hal-04248227⟩

• Article dans une revue

Interface response and rescaling approach to the eigenvectors of layered composite systems. I. Double-layer slab

H. Puszkarski, Leonard Dobrzynski

Physical Review B, 1989, 39 (3), pp.1819-1824. ⟨10.1103/PhysRevB.39.1819⟩. ⟨hal-04069628⟩

• Article dans une revue

Elastic energy of interaction of a point defect with a grain boundary

P. Deymier, L. Janot, J. Li, Leonard Dobrzynski

Physical Review B, 1989, 39 (3), pp.1512-1517. ⟨10.1103/PhysRevB.39.1512⟩. ⟨hal-04070492⟩

• Communication dans un congrès

Theory of transition metal impurities in semiconductors

Christophe Delerue, Michel Lannoo

Congrès de l'EPS., 1988, Budapest, Hungary. pp.128. ⟨hal-03316736⟩

• Autre publication scientifique

Composants millimétriques à deux électrodes

M.R. Friscourt, Christophe Dalle, P.A. Rolland

1989. ⟨hal-00005289⟩

• Article dans une revue

Interface response theory of N-layered discrete semiconductor superlattices

M Rahmani, P Masri, Leonard Dobrzynski

We have applied for the first time a recent interface response theory to superlattices formed out of a periodic repetition of N different discrete semiconductor slabs. General expressions for the interface response functions are obtained. A simple application to an exactly solvable model of two-,...

Journal of Physics C: Solid State Physics, 1988, 21 (27), pp.4761-4781. ⟨10.1088/0022-3719/21/27/007⟩. ⟨hal-04070520⟩

• Communication dans un congrès

IMPACT-4, a general two-dimensional multi- layer process simulator

B. Baccus, Dominique Collard, Emmanuel Dubois, Denis Morel

Simulation of Semiconductor Devices and Processes, Ed. G. Baccarani and M. Rudan, Sep 1988, Bologna, Italy. ⟨hal-04249164⟩

• Communication dans un congrès

Two-dimensional process simulation of bipolar devices using a multi-layer simulator: IMPACT-4’

B. Baccus, Dominique Collard, Emmanuel Dubois, Denis Morel

Proc. of the Bipolar Circuits and Technology Meeting, BCTM, Sep 1988, Minneapolis, United States. ⟨hal-04249168⟩

• Communication dans un congrès

Electrical performances evaluation of isolation structures by coupled process and device simulation

Emmanuel Dubois, Jean-Louis Coppée, B. Baccus, Dominique Collard

Simulation of Semiconductor Devices and Processes, Ed. G. Baccarani and M. Rudan, Sep 1988, Bologna, Italy. ⟨hal-04249174⟩

• Article dans une revue

Interface response theory of composite systems

Leonard Dobrzynski

Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 1988, 200 (2-3), pp.435-443. ⟨10.1016/0039-6028(88)90548-1⟩. ⟨hal-04070071⟩