Publicaciones

Affichage de 1861 à 1870 sur 16429


  • Article dans une revue

Performance improvement with non-alloyed ohmic contacts technology on AlGaN/GaN High Electron Mobility Transistors on 6H-SiC substrate

Marie Lesecq, Yassine Fouzi, Ali Abboud, N. Defrance, Francois Vaurette, Saliha Ouendi, Etienne Okada, Marc Portail, Micka Bah, Daniel Alquier, Jean-Claude de Jaeger, Eric Frayssinet, Yvon Cordier

In this paper, non-alloyed ohmic contacts regrown by molecular beam epitaxy (MBE) are fabricated on AlGaN/ GaN high-electron-mobility transistors on 6H-SiC substrate. Low ohmic contact resistance of 0.13 Ω.mm is obtained. This paper demonstrates the high frequency and high power performance...

Microelectronic Engineering, 2023, 276, pp.111998. ⟨10.1016/j.mee.2023.111998⟩. ⟨hal-04084512⟩

  • Brevet

Optical detection method

Vincent Senez, Alexis Vlandas, Sébastien Lamant, Bernard Cathala, Celine Moreau, Gabrielle Veronese, Sophie Bozonnet, Elisabeth Laville, Megane Cleret

United States, Patent n° : US11635372 (B2) 2023-04-25. 2023, N° de priorité: FR20170054926 20170602 ; WO2018EP64496 20180601 - N° de demande : US201816618605 20180601. ⟨hal-05650420⟩

  • Communication dans un congrès

Impact of nanoscale faceting on the electrical properties of in-plane InGaAs/Ga(As)Sb tunnel junctions grown by selective area MBE

Alexandre Bucamp, Christophe Coinon, Sylvie Lepilliet, David Troadec, Gilles Patriarche, X. Wallart, L. Desplanque

21 st European Workshop on Molecular Beam Epitaxy (EuroMBE 2023), Apr 2023, Madrid, Spain, Apr 2023, Madrid, Spain. ⟨hal-04332199⟩

  • Communication dans un congrès

Selective Area Growth of in-plane In0.5Ga0.5P nanowires on GaAs (111)B substrate by molecular beam epitaxy

Clément Barbot, Christophe Coinon, X. Wallart, B. Grandidier, L. Desplanque

21st European Workshop on Molecular Beam Epitaxy, EuroMBE 2023, Apr 2023, Madrid, Spain. ⟨hal-04475475⟩