Publicaciones

Affichage de 1871 à 1880 sur 16064


  • Article dans une revue

CNTFET‐based ternary address decoder design

Rawan Mohammed, Mohammed Fouda, Ihsen Alouani, Lobna Said, Ahmed Radwan

With the end of Moore's law, new paradigms are investigated for more scalable computing systems. One of the promising directions is to examine the data representation toward higher data density per hardware element. Multiple valued logic (MVL) emerged as a promising system due to its...

International Journal of Circuit Theory and Applications, 2022, 50 (10), pp.3682-3691. ⟨10.1002/cta.3340⟩. ⟨hal-03749121⟩

  • Article dans une revue

Breakdown mechanism of AlGaN/GaN HEMT on 200-mm silicon substrate with silicon implant-assisted contacts

Antoine Chanuel, Yveline Gobil, Chuan Lun Hsu, Matthew Charles, Marianne Coig, Jerome Biscarrat, Francois Aussenac, N. Defrance, Christophe Gaquière, Fred Gaillard, Erwan Morvan

We present an access technology suitable for scaled gallium nitride (GaN) high electron mobility transistor (HEMT) in Ka -band. The comparison between OFF-state characteristics of a silicon implant-assisted contact and a conventional recessed Ti/Al-based Ohmic contact is presented. The transistor...

IEEE Transactions on Electron Devices, 2022, 69 (10), pp.5530-5535. ⟨10.1109/TED.2022.3201837⟩. ⟨hal-03775876⟩