Publicaciones

• Article dans une revue

Modeling of access resistances and channel temperature estimation for GaN HEMT

Shariful Islam, Mohammad Abdul Alim, Abu Zahed Chowdhury, Christophe Gaquière

Accurate prediction of resistances at the transistor’s access zone and their temperature dependency are very important, since the current flow to the device depends on that region. In this paper, we have modeled the access resistances and have verified their temperature dependency with the...

Journal of Thermal Analysis and Calorimetry, 2022, 147, pp.10991-10998. ⟨10.1007/s10973-022-11371-y⟩. ⟨hal-03670320⟩

• Article dans une revue

CRC-Based Correction of Multiple Errors Using an Optimized Lookup Table

Vivien Boussard, Stephane Coulombe, François-Xavier Coudoux, Patrick Corlay

In this paper, we propose a new approach to perform multiple error correction in wireless communications over error-prone networks. It is based on the cyclic redundancy check syndrome, using an optimized lookup table that avoids performing arithmetic operations. This method is able to achieve the...

IEEE Access, 2022, 10, pp.23931-23947. ⟨10.1109/ACCESS.2022.3155457⟩. ⟨hal-03664661⟩

• Article dans une revue

Towards Outdoor Electromagnetic Field Exposure Mapping Generation Using Conditional GANs

Mohammed Mallik, Angesom Ataklity Tesfay, Benjamin Allaert, Rédha Kassi, Esteban Egea-Lopez, Jose-Maria Molina-Garcia-Pardo, Joe Wiart, Davy Gaillot, Laurent Clavier

With the ongoing fifth-generation cellular network (5G) deployment, electromagnetic field exposure has become a critical concern. However, measurements are scarce, and accurate electromagnetic field reconstruction in a geographic region remains challenging. This work proposes a conditional...

Sensors, 2022, 22 (24), pp.9643. ⟨10.3390/s22249643⟩. ⟨hal-03919067⟩

• Article dans une revue

Unstationary dynamics of drops subjected to MHz-surface acoustic waves modulated at low frequency

Philippe Brunet, Michael Baudoin

In the present work, we investigate the unstationary dynamics of sessile droplets subjected to high-frequency surface acoustic waves modulated at a lower frequency close to the first inertio-capillary resonance mode of the drop. Under the action of both acoustic streaming and radiation pressure,...

Experiments in Fluids, 2022, 63 (1), pp.34. ⟨10.1007/s00348-021-03365-7⟩. ⟨hal-03596906⟩

• Article dans une revue

Picosecond acoustics versus tape adhesion test: Confrontation on a series of similar samples with a variable adhesion

A. Vital-Juarez, L. Roffi, J.-M. Desmarres, Arnaud Devos

A large number of methods have been developed to characterize the adhesion of a thin film to a substrate. Among them, tape test is still one of the most popular methods. Acoustic waves and especially ultra-high frequency acoustic waves are also sensitive to adhesion defects as they affect the way...

Surface and Coatings Technology, 2022, 448, pp.128926. ⟨10.1016/j.surfcoat.2022.128926⟩. ⟨hal-03814601⟩

• Article dans une revue

Non-Hermitian skin effect in a phononic beam based on piezoelectric feedback control

Yabin Jin, Wenxin Zhong, Runcheng Cai, Xiaoying Zhuang, Yan Pennec, Bahram Djafari-Rouhani

Non-Hermitian systems have gained a great deal of interest in various wave problems due their ability of exhibiting unprecedented phenomena such as invisibility, cloaking, enhanced sensing, or the skin effect. The latter manifests itself by the localization of all bulk modes in a specific frequency...

Applied Physics Letters, 2022, 121 (2), pp.022202. ⟨10.1063/5.0097530⟩. ⟨hal-03742127⟩

• Communication dans un congrès

High Breakdown Field and Low Trapping Effects up to 1400 V in Normally Off GaN‐on‐Silicon Heterostructures

Idriss Abid, Youssef Hamdaoui, Jash Mehta, F Medjdoub

In this study, we report on the development of a fully normally-off high electron mobility transistor (HEMT) gallium nitride on silicon (GaN-on-Si) heterostructures designed for high voltage operation. The normally-off configuration was achieved by means of a p-gallium nitride (p-GaN) cap layer...

• Article dans une revue

Low Buffer Trapping Effects above 1200 V in Normally off GaN-on-Silicon Field Effect Transistors

Idriss Abid, Youssef Hamdaoui, Jash Mehta, Joff Derluyn, Farid Medjdoub

We report on the fabrication and electrical characterization of AlGaN/GaN normally off transistors on silicon designed for high-voltage operation. The normally off configuration was achieved with a p-gallium nitride (p-GaN) cap layer below the gate, enabling a positive threshold voltage higher than...

Micromachines, 2022, III–V Compound Semiconductors and Devices, 13 (9), pp.1519. ⟨10.3390/mi13091519⟩. ⟨hal-03777891⟩

• Article dans une revue

Embroidered Spoof Surface Plasmon Polariton Transmission Line for Wireless Body Sensor Network

Ali Ghaddar, Baptiste Garnier, François Rault, Eric Lheurette, Ludovic Burgnies

A wearable Spoof Surface Plasmon Polariton Transmission Line (SSPP TL) operating at 2.45 GHz designed for embroidery production and on-body communication is proposed. The SSPP TL supports both even and odd modes launched by near field coupling with a dipole antenna perpendicular and parallel to the...

IET Microwaves Antennas and Propagation, 2022, 16 (4), pp.187-193. ⟨10.1049/mia2.12224⟩. ⟨hal-03592149⟩

• Communication dans un congrès

Oscillations du ressaut hydraulique circulaire

Aurélien Goerlinger, Farzam Zoueshtiagh, Alexis Duchesne

25emes Rencontres du non-linéaire 2022, Mar 2022, Paris, France. ⟨hal-03607819⟩