Publicaciones

• Article dans une revue

Increasing the efficiency of a spintronic thz emitter based on wse2/feco

Dinar Khusyainov, Andrey Guskov, Sergei Ovcharenko, Nicolas Tiercelin, Vladimir L. Preobrazhensky, Arseniy Buryakov, Alexander Sigov, Elena Mishina

We report an increase in terahertz (THz) radiation efficiency due to FeCo/WSe2 structures in the reflection geometry. This can be attributed to an absorption increase in the alloy FeCo layer at the input FeCo/WSe2 interface due to constructive interference, as well as to the backward transport of...

Materials, 2021, 14 (21), pp.6479. ⟨10.3390/ma14216479⟩. ⟨hal-03542156⟩

• Communication dans un congrès

[Invited] Graphene-based nanocomposites for sensing and biomedical applications

Rabah Boukherroub

Second International E-Conference on Physics of Materials & Nanotechnology (ICPN-2021), Mangalore University, Department of Studies in Physics, Oct 2021, Konaje, India. ⟨hal-04620465⟩

• Communication dans un congrès

Graphene/pentacene Van der Waals interfaces: from macroscopic devices to the nanoscale

Michel Daher Mansour, Jacopo Oswald, Davide Beretta, Michel Calame, Dominique Vuillaume

Graphene2021, Oct 2021, Grenoble, France. Track 4 - New Graphene & 2DM Devices. ⟨hal-03584484⟩

• Thèse

Synthèse et micro-structuration des films piézoélectriques sans plomb pour la réalisation de composites céramique/polymère, Synthesis and micro-patterning of lead-free piezolectric thin films for the realization of ceramic/polymer composites

Arthur Hamieh

Ce travail est consacré à la synthèse de films de BNT, leurs caractérisations physico-chimiques et électriques et leurs structurations. Les films ont été déposés par pulvérisation cathodique rf magnétron sur des substrats LNO/SiO2/Si à partir des cibles fabriquées au laboratoire. Dans un premier..., The present work is devoted to the synthesis, the characterization and the etching of piezoelectric BNT thin films. The films were deposited by rf magnetron sputtering on LNO/SiO2/Si substrates from homemade targets. First, in order to control the composition of BNT films, the influence of...

Micro et nanotechnologies/Microélectronique. Université Polytechnique Hauts-de-France, 2021. Français. ⟨NNT : 2021UPHF0029⟩. ⟨tel-03542260⟩

• Communication dans un congrès

Non-linearity of RF switch based on 2D materials

S. Skrzypczak, K. Myungsoo, Guillaume Ducournau, Dominique Vignaud, R. Gassilloud, Alessandro Cresti, J. David-Vifflantzeff, Yves Deblock, J. Hadid, Vanessa Avramovic, Henri Happy, D. Akinwande, Emiliano Pallecchi

Graphene2021, Oct 2021, Grenoble, France. ⟨hal-03584529⟩

• Article dans une revue

A macroscopic object passively cooled into its quantum ground state of motion beyond single-mode cooling

D. Cattiaux, I. Golokolenov, S. Kumar, M. Sillanpää, L. Mercier de Lépinay, R. R Gazizulin, Xin Zhou, A. D Armour, Olivier Bourgeois, A. Fefferman, E. Collin

The nature of the quantum-to-classical crossover remains one of the most challenging open question of Science to date. In this respect, moving objects play a specific role. Pioneering experiments over the last few years have begun exploring quantum behaviour of micron-sized mechanical systems,...

Nature Communications, 2021, 12, pp.6182. ⟨10.1038/s41467-021-26457-8⟩. ⟨hal-03412629⟩

• Communication dans un congrès

Intrinsic carrier mobility of Graphene, CNT, and GNR

Jing Li, Yann-Michel Niquet, Christophe Delerue

Graphene2021, Oct 2021, Grenoble, France. ⟨hal-03587596⟩

• Communication dans un congrès

Advances on hBN growth on Ni substrate by Plasma Assisted Molecular Beam Epitaxy

Walter Batista Pessoa, Dominique Vignaud, X. Wallart

Hexagonal boron nitride (hBN) is an insulator from the 2D materials family receiving an extensive interest in the development of Van der Waals (VdW) heterostructures not only for graphene encapsulation due to its chemical stability but also as tunnel barrier when sandwiched by graphene layers. In...

Graphene2021, Oct 2021, Grenoble, France. ⟨hal-03683202⟩

• Communication dans un congrès

AlGaN/GaN High Electron Mobility Transistors Grown by MOVPE on 3C-SiC/Si(111) for RF Applications

Marie Lesecq, E. Frayssinet, Marc Portail, M Bah, N. Defrance, T-H. Ngo, M. Abou Daher, M. Zielinski, Daniel Alquier, Jean-Claude de Jaeger, Yvon Cordier

13th European Conference on Silicon Carbide and Related Materials (ECSCRM 2020), Oct 2021, Tours, France. ⟨hal-04038119⟩

• Article dans une revue

Impact of III-nitride/Si interface preconditioning on breakdown voltage in GaN-on-silicon HEMT

Abdelkrim Khediri, Abbasia Talbi, Abdelatif Jaouad, Hassan Maher, Ali Soltani

In this paper, an AIGaN/GaN metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) device is realized. The device shows normal ON characteristics with a maximum current of 570 mA/mm at a gate-to-source voltage of 3 V, an on-state resistance of 7.3 Ω·mm and breakdown voltage of 500 V...

Micromachines, 2021, 12 (11), pp.1284. ⟨10.3390/mi12111284⟩. ⟨hal-03403139⟩