Publicaciones

Affichage de 2681 à 2690 sur 16301


  • Article dans une revue

In-plane InGaAs/Ga(As)Sb nanowire based tunnel junctions grown by selective area molecular beam epitaxy

Alexandre Bucamp, Christophe Coinon, Sylvie Lepilliet, David Troadec, Gilles Patriarche, M Diallo, Vanessa Avramovic, Kamel Haddadi, X. Wallart, L. Desplanque

In-plane InGaAs/Ga(As)Sb heterojunction tunnel diodes are fabricated by selective area molecular beam epitaxy with two different architectures: either radial InGaAs core/Ga(As)Sb shell nanowires or axial InGaAs/GaSb heterojunctions. In the former case, we unveil the impact of strain relaxation and...

Nanotechnology, 2022, 33 (14), pp.145201. ⟨10.1088/1361-6528/ac45c5⟩. ⟨hal-03547003⟩

  • Communication dans un congrès

[Invited] Quand la chimie du solide rencontre la micro-électronique: les micro-batteries 3D

Pascal Roussel, Christophe Lethien

2ème journées recherche de l'Université de Lille, 2022, Villeneuve d’Ascq, France. ⟨hal-03718364⟩

  • Communication dans un congrès

Nanoprobe study of the electric field driven insulator-to-metal transition in GaMo4S8

H. Koussir, Isabelle Lefebvre, Maxime Berthe, Y. Chernukha, J. Tranchant, B. Corraze, Etienne Janod, Laurent Cario, B. Grandidier, Pascale Diener

The resistive switching observed under electric pulses in Mott materials has a high potential for micro and nanoelectronics. Here we report on the study of the resistive switching observed at the surface of single crystals of the canonical Mott semiconductor GaMo4S8. The study is made using a...

Strongly Correlated Electron Systems (SCES 2020), Sep 2021, Campinas, Brazil. Journal of Physics: Conference Series, Volume 2164, 012046, 4 p., ⟨10.1088/1742-6596/2164/1/012046⟩. ⟨hal-03753819⟩

  • Chapitre d'ouvrage

Chapter 3. Surface modification of silicon nanowires for biosensing

Yannick Coffinier, Rabah Boukherroub

Silicon nanowires (Si NWs) are one of the most important one-dimensional semiconductors, partly due to their ready implementation in modern technology. As sensing applications using Si NWs increase, it is necessary to have well-defined chemical attachment schemes that will provide the desired...

Semiconducting Silicon Nanowires for Biomedical Applications, Elsevier, pp.25-68, 2022, A volume in Woodhead Publishing Series in Biomaterials, ISBN 978-0-12-821351-3. ⟨10.1016/B978-0-12-821351-3.00017-3⟩. ⟨hal-03663951⟩

  • Communication dans un congrès

Mise en œuvre de capteurs RF-MEMS acoustiques pour l’industrie 4.0

Yannick Dusch, Cécile Ghouila-Houri, Aurélien Mazzamurro, Ghizlane Boussatour, Hatem Dahmani, Olivier Bou Matar, Vincent Maurice, Philippe Pernod, Abdelkrim Talbi

Cette étude propose la conception complète d’un système de suivi à distance des sollicitations mécaniques dans les machines électriquesafin de répondre aux problématiques de l’industrie 4.0 et de la maintenance prédictive. Elle s’appuie sur la conception, la fabrication et la caractérisation de...

16emes journées pédagogiques du CNFM, JPCNFM’2021, CNFM, Dec 2021, Saint-Malo, France. 6 p., J3eA Hors-série 1 - Actes JPCNFM’2021, Volume 21 (2022), ⟨10.1051/j3ea/20221019⟩. ⟨hal-03464507⟩

  • Article dans une revue

3D tensegrity braces with superelastic response for seismic control

Filipe Santos, Catarina Caroço, Ada Amendola, M. Miniaci, Fernando Fraternali

Tensegrity structures have recently shown great potential as bracing devices for seismic control due to their unique ability to passively dissipate energy in structures subjected to severe deformations. Indeed, behaving as nonlinear springs, they are able to dissipate a great amount of energy...

International Journal for Multiscale Computational Engineering, 2022, 20 (5), pp.53-64. ⟨10.1615/IntJMultCompEng.2022041968⟩. ⟨hal-03873981⟩