Publicaciones

Affichage de 2841 à 2850 sur 16064


  • Communication dans un congrès

Project-Based Learning in Mechatronics at insa HdF

Samuel Dupont, Farouk Benmeddour, Christophe Delebarre

7ème colloque pédagogie et formation, Groupe INSA, May 2021, Valenciennes ( en ligne), France. pp.S.07-2. ⟨hal-04467567⟩

  • Article dans une revue

Pump-probe localization technique of varying solid contacts

Marina Terzi, Lynda Chehami, Maxime Farin, Emmanuel Moulin, Vladislav Aleshin, Nikolay Smagin, Julien de Rosny, Farouk Benmeddour

A baseline-free defect localization method in thin plates is proposed and tested. In this proof-of-concept work, a steel ball pressed against an aluminum plate is used to mimic a surface contact defect. The technique takes benefit of a repetitive nonlinear pump-probe interaction with a...

Journal of the Acoustical Society of America, 2021, 149 (5), pp.2943-2949. ⟨10.1121/10.0004820⟩. ⟨hal-03376735⟩

  • Article dans une revue

Fast X‐ray Nanotomography with Sub‐10 nm Resolution as a Powerful Imaging Tool for Nanotechnology and Energy Storage Applications

Vincent de Andrade, Viktor Nikitin, Michael Wojcik, Alex Deriy, Sunil Bean, Deming Shu, Tim Mooney, Kevin Peterson, Prabhat Kc, Kenan Li, Sajid Ali, Kamel Fezzaa, Doga Gürsoy, Cassandra Arico, Saliha Ouendi, David Troadec, Patrice Simon, Francesco de Carlo, Christophe Lethien

In the last decade, transmission X-ray microscopes (TXMs) have come into operation in most of the synchrotrons worldwide. They have proven to be outstanding tools for non-invasive ex and in situ 3D characterization of materials at the nanoscale across varying range of scientific applications....

Advanced Materials, 2021, 33 (21), pp.2008653. ⟨10.1002/adma.202008653⟩. ⟨hal-03545058⟩

  • Article dans une revue

Design of zero bias power detectors towards power consumption optimization in 5G devices

Issa Alaji, Walid Aouimeur, Haitham Ghanem, Etienne Okada, Sylvie Lepilliet, Daniel Gloria, Guillaume Ducournau, Christophe Gaquière

This paper presents the design and characterization of zero bias power detectors, based on MOSFET transistors, integrated in SiGe 55-nm BiCMOS technology from ST-Microelectronics. The working frequency bands of the circuits are located in the range (38–55) GHz, dedicated to optimize the power...

Microelectronics Journal, 2021, 111, pp.105035. ⟨10.1016/j.mejo.2021.105035⟩. ⟨hal-03542166⟩