Publicaciones

Affichage de 291 à 300 sur 16072


  • Chapitre d'ouvrage

XAI for wireless communications

Abdul-Karim Gizzini, Yahia Medjahdi, Ali Ghandour, Laurent Clavier, Mouna Ben Mabrouk

The native artificial intelligence (AI) concept is envisioned to be integrated into 6G future communications. Due to the black box nature of the majority of AI models, the decision-making strategy used by these models is critical, risky, and challenging. This issue can be tackled by developing...

Explainable AI for Communications and Networking, Elsevier, pp.73-91, 2025, 9780443291357. ⟨10.1016/B978-0-44-329135-7.00014-X⟩. ⟨hal-05264870⟩

  • Article dans une revue

Locally sealed microfabricated vapor cells filled from an ex situ Cs source

Linda Peroux, Arthur Dewilde, Ravinder Kumar Chutani, Aurelien Mazzamurro, Jérémy Bonhomme, Andrei Mursa, Jean-François Clément, Abdelkrim Talbi, Philippe Pernod, Nicolas Passilly, Vincent Maurice

Microfabricated alkali vapor cells are key to enable miniature devices such as atomic clocks and optically pumped magnetometers with reduced size, weight and power. Yet, more versatile fabrication methods are still needed to further expand their use cases. Here, we demonstrate a novel approach to...

Applied Physics Letters, 2025, 126 (14), pp.144003. ⟨10.1063/5.0265624⟩. ⟨hal-05057374⟩

  • Communication dans un congrès

SnatchML: Hijacking ML Models Without Training Access

Mahmoud Ghorbel, Halima Bouzidi, Ioan Marius Bilasco, Ihsen Alouani

The widespread deployment of Machine Learning (ML) models has been accompanied by the emergence of various attacks that threaten their trustworthiness and raise ethical and societal concerns. One such attack is model hijacking, where an adversary seeks to repurpose a victim model to perform a...

2025 IEEE Conference on Secure and Trustworthy Machine Learning (SaTML), Apr 2025, Copenhagen, Denmark. pp.92-109, ⟨10.1109/SaTML64287.2025.00013⟩. ⟨hal-05148276⟩

  • Article dans une revue

Aluminum Nanoparticles for Photobleaching Resistance of Quantum Dots in Solution

Théo Duarte de Assuncao, Silvère Schuermans, Thomas Lerond, Jérôme Martin, Davy Gérard, Thomas Maurer, Jérôme Plain, Julien Proust

<div><p>We report on the optical properties of aluminum spherical nanoparticles exhibiting diameters ranging between 2 and 20 nm made by the reduction of aluminum ions in alkane solvents. In the UV-range, the extinction spectroscopy measurements unveiled well-defined surface plasmon...

Journal of Physical Chemistry C, 2025, 129 (15), pp.7541-7549. ⟨10.1021/acs.jpcc.5c00879⟩. ⟨hal-05042592⟩

  • Autre publication scientifique

Mot d’accueil et présentations CNRS, CSF Electronique et initiative Microélectronique

Mehdi Gmar, Virginie Hoel, Sandrine Beaufils, Pascal Nivesse, Abdelkader Souifi

Présentations CNRS, CSF Electronique et initiative Microélectronique Mehdi Gmar, CNRS Sandrine Beaufils, ACSIEL Alliance Electronique Virginie Hoel, IEMN CNRS Pascal Nivesse, CNRS Abdelkader Souifi, CNRS

Journée: " Les nouvelles frontières de la connectivité Datacom, HPC et IA : quels défis et opportunités ? ", 2025. ⟨hal-05041926⟩

  • Article dans une revue

A Practical Approach for Internal Energy Tuning in LDI-MS: Porous Silicon Substrates as a Case Study

Clara Whyte Ferreira, Bastien Cabrera-Tejera, Bernard Leyh, Romain Tuyaerts, Gilles Scheen, Yannick Coffinier, Edwin de Pauw, Gauthier Eppe

<div xmlns="http://www.tei-c.org/ns/1.0"><p>This study presents a methodical procedure for optimizing laser desorption/ionization mass spectrometry (LDI-MS) supports using porous silicon (PSi) substrates. The approach involves the use of substituted benzyl-pyridinium salts (...

Journal of The American Society for Mass Spectrometry, 2025, 36, pp.1008 - 1016. ⟨10.1021/jasms.4c00462⟩. ⟨hal-05094662⟩

  • Article dans une revue

Optimized two-step growth of large surface two-dimensional boron nitride on Ge (001) films by molecular beam epitaxy

Walter Batista Pessoa, Max Franck, Nicolas Nuns, Jarek Dabrowski, Mohamed Achehboune, Jean-Francois Colomer, Luc Henrard, Mindaugas Lukosius, Xavier Wallart, Dominique Vignaud

The growth of two-dimensional boron nitride (2D-BN) thin films on Ge (001) has been studied, with the ultimate goal of integrating this material into Si technology. Molecular beam epitaxy was used in a dedicated ultra-high vacuum chamber. To avoid the formation of thermal pits on heating the Ge...

Applied Surface Science, 2025, 699, pp.163165. ⟨10.1016/j.apsusc.2025.163165⟩. ⟨hal-05039362v2⟩