Publicaciones

Affichage de 3151 à 3160 sur 16255


  • Article dans une revue

Influence of ion implantation on the charge storage mechanism of vanadium nitride pseudocapacitive thin films

Etienne Le Calvez, Dmitri Yarekha, Laurent Fugère, Kévin Robert, Marielle Huvé, Maya Marinova, Olivier Crosnier, Christophe Lethien, Thierry Brousse

The influence of microstructural or structural defects is seldom investigated in pseudocapacitive electrodes. Indeed, most of the synthesized materials do present defects at every scales which contribute to the improvement of the charge storage. In this study VN thin films were deposited by...

Electrochemistry Communications, 2021, 125, pp.107016. ⟨10.1016/j.elecom.2021.107016⟩. ⟨hal-03266225⟩

  • Communication dans un congrès

[Invited] Pushing the limit of lithography for patterning two-dimensional lattices in III-V semiconductor quantum wells

Nathali Alexandra Franchina Vergel, C. Post, Francois Vaurette, Yannick Lambert, Dmitri Yarekha, Christophe Coinon, G. Fleury, T.S. Kulmala, T. Xu, L. Desplanque, X. Wallart, D. Vanmaekelbergh, Christophe Delerue, B. Grandidier

Building two-dimensional lattices in semiconductor quantum-wells offers the prospect to design distinct energy-momentum dispersions, including conical intersections and nondispersive bands. Here, we compare three lithographic patterning methods, e-beam lithography, block copolymer lithography and...

5th IEEE Electron Devices Technology & Manufacturing Conference, EDTM 2021, Apr 2021, Chengdu, China. pp.1-3, ⟨10.1109/EDTM50988.2021.9420884⟩. ⟨hal-03261329⟩

  • Article dans une revue

MaskedFace-Net – A dataset of correctly/incorrectly masked face images in the context of COVID-19

Adnane Cabani, Karim Hammoudi, Halim Benhabiles, Mahmoud Melkemi

Smart Health, 2021, 19, pp.100144 -. ⟨10.1016/j.smhl.2020.100144⟩. ⟨hal-03492834⟩

  • Communication dans un congrès

[Invited] Graphene-based nanocomposites for sensing and biomedical applications

Rabah Boukherroub

Seminar, Hamdi Mango Center for Scientific Research, Mar 2021, Amman, Jordan. ⟨hal-04620406⟩

  • Brevet

Synapse artificielle commutée

Francois Danneville, Alain Cappy, Ilias Sourikopoulos, Christophe Loyez

Chine, N° de brevet: CN112585622 (A) 2021-03-30. 2021, N° de priorité : FR20180054010 20180514 - N° de demande : CN20198032822 20190513. ⟨hal-05654987⟩