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Affichage de 3181 à 3190 sur 16094

Article dans une revue

Van Hove singularities and trap states in two-dimensional CdSe nanoplatelets

Nemanja Peric, Yannick Lambert, Shalini Singh, Ali Hossain Khan, Nathali Alexandra Franchina Vergel, D. Deresmes, Maxime Berthe, Zeger Hens, Iwan Moreels, Christophe Delerue, B. Grandidier, Louis Biadala

Semiconductor nanoplatelets, which offer a compelling combination of the flatness of two-dimensional semiconductors and the inherent richness brought about by colloidal nanostructure synthesis, form an ideal and general testbed to investigate fundamental physical effects related to the...

Nano Letters, 2021, 21 (4), pp.1702-1708. ⟨10.1021/acs.nanolett.0c04509⟩. ⟨hal-03152599⟩

Communication dans un congrès

Non-linear analysis of a broadband power amplifier at 300 GHz

Haitham Ghanem, Benjamin Schoch, Ingmar Kallfass, P. Szriftgiser, Malek Zegaoui, Mohammed Zaknoune, Francois Danneville, Guillaume Ducournau

In this article we present a new method to measure the third-order intercept point (IP3) of a 300 GHz medium power amplifier MMIC based on III-V technology in an on-wafer measurement setup. The extraction was carried out using a uni-travelling carrier photodiode as the input signal source. Taking...

15th European Microwave Integrated Circuits Conference, Session EuMIC12 - Design and Characterisation Techniques,, Jan 2021, Utrecht, Netherlands. pp.209-212. ⟨hal-03348195⟩

Communication dans un congrès

Back gate impact on the noise performances of 22FDX fully-depleted SOI CMOS

Ousmane Magatte Kane, Luca Lucci, Pascal Scheiblin, Thierry Poiroux, Jean-Charles Barbé, Francois Danneville

Ultra-Thin-Body and Back-oxide Fully-Depleted Silicon-On-Insulator (UTBB-FDSOI) MOSFETs are the most recent and advanced Silicon-On-Insulator (SOI) architecture proposed to overcome the down-scaling limitations of traditional bulk devices. The UTBB-FDSOI architecture has already been proved very...

15th European Microwave Integrated Circuits Conference, EuMIC 2020, Jan 2021, Utrecht, Netherlands. 81-84, https://ieeexplore.ieee.org/abstract/document/9337333. ⟨hal-03462849⟩

Article dans une revue

High-Q silicon nitride drum resonators strongly coupled to gates

Xin Zhou, Srisaran Venkatachalam, Ronghua Zhou, Hao Xu, Alok Pokharel, Andrew Fefferman, Mohammed Zaknoune, Eddy Collin

Silicon nitride (SiN) mechanical resonators with high quality mechanical properties are attractive for fundamental research and applications. However, it is challenging to maintain these mechanical properties while achieving strong coupling to an electrical circuit for efficient on-chip integration...

Nano Letters, 2021, 21 (13), pp.5738-5744. ⟨10.1021/acs.nanolett.1c01477⟩. ⟨hal-03263144⟩

Autre publication scientifique

Author Correction: Optoelectronic mixing with high-frequency graphene transistors (Nature Communications, (2021), 12, 1, (2728), 10.1038/s41467-021-22943-1)

A. Montanaro, W. Wei, D. de Fazio, U. Sassi, G. Soavi, P. Aversa, A.C. Ferrari, Henri Happy, P. Legagneux, Emiliano Pallecchi

The original version of this Article contained an error in Fig. 7 and Fig. 8a, c, in which the unit on the vertical axes incorrectly read “μS”. This has been corrected to “S” in both the PDF and HTML versions of the Article. © 2021 The Author(s).

2021, pp.3507. ⟨10.1038/s41467-021-23916-0⟩. ⟨hal-03542160⟩

Article dans une revue

The Map3k12 (Dlk)/JNK3 signaling pathway is required for pancreatic beta-cell proliferation during postnatal development

Mathie Tenenbaum, Valérie Plaisance, Raphael Boutry, Valérie Pawlowski, Cécile Jacovetti, Clara Sanchez-Parra, Hélène Ezanno, Julien Bourry, Nicole Beeler, Gianni Pasquetti, Valery Gmyr, Stéphane Dalle, Julie Kerr-Conte, François Pattou, Syu-Ichi Hirai, Romano Regazzi, Amélie Bonnefond, Philippe Froguel, Amar Abderrahmani

Unveiling the key pathways underlying postnatal beta-cell proliferation can be instrumental to decipher the mechanisms of beta-cell mass plasticity to increased physiological demand of insulin during weight gain and pregnancy. Using transcriptome and global Serine Threonine Kinase activity (STK)...

Cellular and Molecular Life Sciences, 2021, 78 (1), pp.287-298. ⟨10.1007/s00018-020-03499-7⟩. ⟨hal-03142227⟩

Article dans une revue

Modeling and experimental analysis of the mass loading effect on micro-ionic polymer actuators using step response identification

Iman Dadras, Sofiane Ghenna, Sébastien Grondel, Eric Cattan, Jaan Raik, Alvo Aabloo, Saoni Banerji

This paper presents a linear electrochemomechanical model for microscale ionic actuators. A frequency-domain approach is used to facilitate model interpretation, simplify model application, and accelerate the generation of actuator-specific models. A system comprising a micro PEDOT:PSS/PEO actuator...

Journal of Microelectromechanical Systems, 2021, 30 (2), pp.243-252. ⟨10.1109/JMEMS.2021.3060897⟩. ⟨hal-03162798⟩

Article dans une revue

GaN-based power devices: Physics, reliability, and perspectives

Matteo Meneghini, Carlo de Santi, Idriss Abid, Matteo Buffolo, Marcello Cioni, Riyaz Abdul Khadar, Luca Nela, Nicolò Zagni, Alessandro Chini, F Medjdoub, Gaudenzio Meneghesso, Giovanni Verzellesi, Enrico Zanoni, Elison Matioli

Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the fabrication of power devices. Among the semiconductors for which power devices are already available in the market, GaN has the widest energy gap, the largest critical field, and the highest saturation velocity...

Journal of Applied Physics, 2021, 130 (18), pp.181101. ⟨10.1063/5.0061354⟩. ⟨hal-03421528⟩

Communication dans un congrès

An advanced ageing methodology for robustness assessment of normally-off AlGaN/GaN HEMT

F. Albany, A. Curutchet, N. Labat, F. Lecourt, E. Walasiak, H. Maher, Y. Cordier, N. Defrance, N. Malbert

The semi-on-state reliability of normally-off AlGaN/GaN high electron mobility transistor fabricated by fluorine ion plasma implantation technology is reported, focusing on an advanced dc step-stress methodology. By inserting a non-stressful fixed-bias step between each stress step, a reliable in-...

15th European Microwave Integrated Circuits Conference, EuMIC 2020, Jan 2021, Utrecht, Netherlands. 237-240, https://ieeexplore.ieee.org/abstract/document/9337362. ⟨hal-03362260⟩

Communication dans un congrès

Bias-dependence of surface charge at low temperature in GaN self-switching diodes

E. Perez-Martin, I. Iniguez-De-La-Torre, T. Gonzalez, Christophe Gaquière, J. Mateos

In this work, with the help of a semi-classical two-dimensional Monte Carlo (MC) simulator, we study the DC current-voltage curves of Self-Switching Diodes (SSDs) fabricated on an AlGaN/GaN heterostructure from 100 K up to room temperature. Due to the very narrow channel of the SSDs, the presence...

13th Spanish Conference on Electron Devices, CDE 2021, Jun 2021, Sevilla, Spain. pp.90-93, ⟨10.1109/CDE52135.2021.9455737⟩. ⟨hal-03362256⟩