Publicaciones

Affichage de 3271 à 3280 sur 16261


  • Communication dans un congrès

20 Gbit/s 306 GHz link enabled by Yagi-Uda antenna

Guillaume Ducournau, Fabio Pavanello, Aritrio Bandyopadhyay, Cybelle Belem-Gonçalves, Frédéric Gianesello, Cyril Luxey, Emilien Peytavit, Jean-Francois Lampin, Malek Zegaoui, Mohammed Zaknoune

We report on the use of a Yagi-Uda antenna on polymer substrate used in a 306 GHz-20 Gbit/s real-time data link for indoor applications. The Yagi-Uda antenna is described and the validation of the THz link is obtained in amplitude modulation mode and using QAM-16 signals (32 Gbit/s).

2021 URSI GASS Conference, Session D08: Integrated Terahertz Electronic and Photonic Devices and Systems (Part 2), Aug 2021, Rome, Italy. pp.939-942. ⟨hal-03413356⟩

  • Communication dans un congrès

[Invited workshop] Nanorobotic On-Wafer Probe Station Under Scanning Electron Microscope

Kamel Haddadi

15th European Microwave Week - Workshop Measurements at mmWave and Terahertz Frequencies of Three Measurement Quantities: S-Parameters, Power, and Complex Permittivity of Dielectric Materials, Jan 2021, Utrecht, Netherlands. ⟨hal-03582098⟩

  • Article dans une revue

New barrier layer design for the fabrication of gallium nitride-metal-insulator-semiconductor-high electron mobility transistor normally-off transistor

Flavien Cozette, Bilal Hassan, Christophe Rodriguez, Eric Frayssinet, Rémi Comyn, François Lecourt, Nicolas Defrance, Nathalie Labat, François Boone, Ali Soltani, Abdelatif Jaouad, Yvon Cordier, Hassan Maher

This paper reports on the fabrication of an enhancement-mode AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistor with a new barrier epi-layer design based on double Al 0.2 Ga 0.8 N barrier layers separated by a thin GaN layer. Normally-off transistors are achieved with good...

Semiconductor Science and Technology, 2021, 36 (3), pp.034002. ⟨10.1088/1361-6641/abd489⟩. ⟨hal-03341284⟩

  • Autre publication scientifique

Advances in Historical Studies [Editor in Chief 10/3]

Raffaele Pisano

2021. ⟨hal-04510951⟩

  • Communication dans un congrès

Nanoprobe study of the electric field driven insulator-to-metal transition in GaMo4S8

H. Koussir, Isabelle Lefebvre, Maxime Berthe, B. Grandidier, Pascale Diener, J. Tranchant, Benoit Corraze, Etienne Janod, Laurent Cario

The resistive switching observed under electric pulses in Mott materials has a high potential for micro and nanoelectronics. Here we report on the study of the resistive switching observed at the surface of single crystals of the canonical Mott semiconductor GaMo4S8. The study is made using a...

Journées du GDR Nanosciences with near-field microscopy under ultra high vacuum 2021, Nov 2021, Toulouse, France. ⟨hal-03606122⟩