Publicaciones

• Article dans une revue

Generalized elastodynamic model for nanophotonics

José Vicente Álvarez Carrera, Bahram Djafari-Rouhani, Daniel Torrent

A self-consistent theory for the classical description of the interaction of light and matter at the nanoscale is presented, which takes into account spatial dispersion. Up to now, the Maxwell equations in nanostructured materials with spatial dispersion have been solved by the introduction of the...

Physical Review B, 2020, 102 (11), 115308, 17 p. ⟨10.1103/PhysRevB.102.115308⟩. ⟨hal-03322493⟩

• Article dans une revue

High breakdown voltage and low buffer trapping in superlattice GaN-on-silicon heterostructures for high voltage applications

Alaleh Tajalli, Matteo Meneghini, Sven Besendörfer, Gaudenzio Meneghesso, Idriss Abid, Roland Püsche, Joff Derluyn, Riad Kabouche, Stefan Degroote, Marianne Germain, Elke Meissner, Enrico Zanoni, F Medjdoub

The aim of this work is to demonstrate high breakdown voltage and low buffer trapping in superlattice GaN-on-Silicon heterostructures for high voltage applications. To this aim, we compared two structures, one based on a step-graded (SG) buffer (reference structure), and another based on a...

Materials, 2020, 13 (19), pp.4271. ⟨10.3390/ma13194271⟩. ⟨hal-03028113⟩

• Thèse

Optimisation de la technologie GaN pour l’amplification de puissance en bande Ku spécifique aux applications senseurs aéroportés, Optimization of GaN technology for Ku-band power amplification specific to airborne sensor applications

Romain Pecheux

Du fait des propriétés exceptionnelles du Nitrure de Gallium (GaN), les transistors HEMTs à base de GaN sont des candidats prometteurs pour les applications de puissance fonctionnant en gamme d’onde millimétrique. Cette technologie émergente est particulièrement attractive pour les senseurs..., Owing to the outstanding properties of Gallium Nitride (GaN), GaN-based HEMTs are promising candidates for power applications operating in the millimetre-wave range. This emerging technology is particularly attractive for the airborne sensors developed by Thales and could eventually replace the...

Micro et nanotechnologies/Microélectronique. Université de Lille, 2020. Français. ⟨NNT : 2020LILUI034⟩. ⟨tel-03623262⟩

• Thèse

Material studies for flexible 3rd generation solar cells, Etudes de matériaux pour cellules solaires flexibles de 3ème génération

Mohammad Ishaq Alkhatab

Among all harvesting technologies, photovoltaic technology is, right now, the one that can provide the highest level of power for mobile applications. Here, we focus on the development of new materials providing a sustainable and low environmental footprint approach for the fabrication of flexible..., Parmi les différentes technologies de récupération d’énergie, la technologie photovoltaïque est celle qui fournit actuellement le plus haut niveau pour les applications mobiles. Ce travail est focalisé sur le développement de nouveaux matériaux permettant d’obtenir des cellules solaires flexibles...

Micro and nanotechnologies/Microelectronics. Université de Lille, 2020. English. ⟨NNT : 2020LILUI036⟩. ⟨tel-03622677⟩

• Communication dans un congrès

Ex-situ sputtering growth and wet etching of lead-ree piezoelectric thin film dedicated for composite pMUT applications

Ahmad Hamieh, Freddy Ponchel, Denis Remiens

17th International Workshop on Piezoelectric Materials and Applications in Actuators, IWPMA 2020, Sep 2020, Honnover, Germany. ⟨hal-03582674⟩

• Communication dans un congrès

[Invited] Challenges and prospects of 3D micro-supercapacitors for powering the internet of things

Christophe Lethien

15th International Ceramics Congress, CIMTEC 2020, Symposium CJ - Materials Demands Towards Next Generation Electrochemical Energy Storage Systems, Sep 2020, Montecatini Terme, Italy. ⟨hal-03547317⟩

• Thèse

Co-intégration de HEMT GaN hyperfréquence normally-off avec des normally-on, Cointegration of normally-off and normally-on high frequency GaN HEMTs

Sébastien Aroulanda

Dans le cadre de la fabrication de dispositifs hyperfréquences, la fonctionnalité normally-off présente deux avantages : elle permet d’une part de s’affranchir de la source de tension négative pour les circuits intégrés monolithiques hyperfréquences (Monolithic Microwave Integrated Circuit – MMIC)..., In the context of high frequency devices fabrication, normally-off transistors offer two benefits: they eliminate the need of a negative voltage supply in the case of Monolithic Microwave Integrated Circuit (MMIC) and would allow the fabrication of logic circuits if integrated with normally-on HEMT...

Micro et nanotechnologies/Microélectronique. Université de Lille, 2020. Français. ⟨NNT : 2020LILUI083⟩. ⟨tel-03356712⟩

• Article dans une revue

Design and preparation of core-shell structured magnetic graphene oxide@MIL-101(Fe): Photocatalysis under shell to remove diazinon and atrazine pesticides

Hanieh Fakhri, Mahdi Farzadkia, Rabah Boukherroub, Varsha Srivastava, Mika Sillanpää

Solar Energy, 2020, 208, pp.990-1000. ⟨10.1016/j.solener.2020.08.050⟩. ⟨hal-03089831⟩

• Article dans une revue

NiMnCr layered double hydroxide-carbon spheres modified Ni foam: An efficient positive electrode for hybrid supercapacitors

Min Li, Ahmed Addad, Mathias Dolci, Pascal Roussel, Mu. Naushad, Sabine Szunerits, Rabah Boukherroub

Chemical Engineering Journal, 2020, 396, pp.125370. ⟨10.1016/j.cej.2020.125370⟩. ⟨hal-03089832⟩

• Communication dans un congrès

Multivariate $alpha$-Stable Models in OFDM-Based IoT Networks with Interference From a Poisson Spatial Field of Interferers

Malcolm Egan, Laurent Clavier

The uncoordinated nature of IoT networks makes interference management a challenging problem. Motivated by NB-IoT and SCMA protocols, we study the interference statistics of a Poisson spatial field of IoT interferers exploiting OFDM. We show for a sufficiently large number of subcarriers that the...

DCCN 2020 - 23rd International Conference on Distributed Computer and Communication Networks: Control, Computation, Communications, Sep 2020, Virtual Event, Russia. pp.1-9. ⟨hal-03018298⟩