Publicaciones

Affichage de 3381 à 3390 sur 16261


  • Article dans une revue

H-Band Substrate-Integrated Discrete-Lens Antenna for High Data Rate Communication Systems

Kossaila Medrar, Loïc Marnat, Laurent Dussopt, Cybelle Belem-Gonçalves, Guillaume Ducournau, Cyril Luxey, Frédéric Gianesello

A substrate-integrated discrete-lens antenna manufactured in standard printed-circuit-board (PCB) technology is demonstrated in H-band (225-325 GHz). The arrays composed of phase-shifting unit cells and a waveguide-fed planar focal source are designed on a single PCB stack with five metal layers...

IEEE Transactions on Antennas and Propagation, 2021, 69 (7), pp.3677-3688. ⟨10.1109/TAP.2020.3044382⟩. ⟨hal-03546303⟩

  • Chapitre d'ouvrage

Chapter 6. Exploring and talking about music

Arthur Paté, Pascal Gaillard

Sensory Experiences - Exploring meaning and the senses, 24, John Benjamins Publishing Company, pp.213-247, 2021, Converging Evidence in Language and Communication Research, 9789027209801. ⟨10.1075/celcr.24.06pat⟩. ⟨hal-03619356⟩

  • Communication dans un congrès

20 Gbit/s 306 GHz link enabled by Yagi-Uda antenna

Guillaume Ducournau, Fabio Pavanello, Aritrio Bandyopadhyay, Cybelle Belem-Gonçalves, Frédéric Gianesello, Cyril Luxey, Emilien Peytavit, Jean-Francois Lampin, Malek Zegaoui, Mohammed Zaknoune

We report on the use of a Yagi-Uda antenna on polymer substrate used in a 306 GHz-20 Gbit/s real-time data link for indoor applications. The Yagi-Uda antenna is described and the validation of the THz link is obtained in amplitude modulation mode and using QAM-16 signals (32 Gbit/s).

2021 URSI GASS Conference, Session D08: Integrated Terahertz Electronic and Photonic Devices and Systems (Part 2), Aug 2021, Rome, Italy. pp.939-942. ⟨hal-03413356⟩

  • Article dans une revue

New barrier layer design for the fabrication of gallium nitride-metal-insulator-semiconductor-high electron mobility transistor normally-off transistor

Flavien Cozette, Bilal Hassan, Christophe Rodriguez, Eric Frayssinet, Rémi Comyn, François Lecourt, Nicolas Defrance, Nathalie Labat, François Boone, Ali Soltani, Abdelatif Jaouad, Yvon Cordier, Hassan Maher

This paper reports on the fabrication of an enhancement-mode AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistor with a new barrier epi-layer design based on double Al 0.2 Ga 0.8 N barrier layers separated by a thin GaN layer. Normally-off transistors are achieved with good...

Semiconductor Science and Technology, 2021, 36 (3), pp.034002. ⟨10.1088/1361-6641/abd489⟩. ⟨hal-03341284⟩

  • Communication dans un congrès

[Invited workshop] Nanorobotic On-Wafer Probe Station Under Scanning Electron Microscope

Kamel Haddadi

15th European Microwave Week - Workshop Measurements at mmWave and Terahertz Frequencies of Three Measurement Quantities: S-Parameters, Power, and Complex Permittivity of Dielectric Materials, Jan 2021, Utrecht, Netherlands. ⟨hal-03582098⟩