Publicaciones

Affichage de 3381 à 3390 sur 16064


  • Communication dans un congrès

[Invited] Assessing electron transport through 2D molecule-nanoparticle networks for reservoir computing sensing (Invited)

Dominique Vuillaume

SPIE Organic Photonics & Electronics, Aug 2020, San Diego, United States. ⟨hal-03253727⟩

  • Communication dans un congrès

Structure and electronic properties of pseudocapacitive vanadium nitride films

Maya Marinova, Marielle Huvé, Kevin Robert, Christophe Lethien, David Troadec, Pascal Roussel

The European Microscopy Congress 2020 (EMC2020), Aug 2020, Copenhagen, Denmark. ⟨hal-03584044⟩

  • Communication dans un congrès

Simulation and Optimization of Cds/ZnSnN2 Structure for Solar Cell Applications with SCAPS-1D Software

Abdelmoumene Laidouci, Abdelkader Aissat, Jean-Pierre Vilcot

In this paper, we are interested in simulating and modeling of Cds/ZnSnN2 structure for a solar cell using SCAPS-1D. The ZnSnN2 is considered as one of the promising absorber materials for photovoltaic application due to the high optical efficiency and the low cost. In the present work, we have...

2nd International Conference on Electronic Engineering and Renewable Energy Systems, ICEERE 2020, Apr 2020, Saidia, Morocco. pp.211-222, ⟨10.1007/978-981-15-6259-4_21⟩. ⟨hal-03043563⟩

  • Communication dans un congrès

Theoretical modeling and optimization of GaAsPN/GaAs tandem dual-junction solar cells

Ahmed Bahi Azzououm, Abdelkader Aissat, Jean-Pierre Vilcot

This paper presents an optimization and simulation of optical and electrical properties of GaAsPN/GaAs tandem Dual-Junction solar cells such as current density-voltage (J-V), external quantum efficiency (EQE), with an AM1.5 solar spectrum. We comparing the simulated performance of various N...

International Conference on Electronic Engineering and Renewable Energy, ICEERE 2020, Apr 2020, Saidia, Morocco. pp.333-338, ⟨10.1007/978-981-15-6259-4_35⟩. ⟨hal-03043571⟩

  • Chapitre d'ouvrage

GaN-based HEMTs for mm-wave applications

Kathia Harrouche, F Medjdoub

Nitride Semiconductor Technology: Power Electronics and Optoelectronic Devices, 2020, ISBN 978-3-527-34710-0 ; e-ISBN 978-3-527-82525-7. ⟨hal-03287288⟩

  • Communication dans un congrès

High Power AlN/GaN HEMTs with record power-added-efficiency >70% at 40 GHz

Kathia Harrouche, Riad Kabouche, Etienne Okada, F Medjdoub

We report on breakthrough power-added-efficiency (PAE) Q-band performances using a vertically scaled AlN/GaN HEMT technology. The comparison between a 3 nm and 4 nm barrier thickness shows both superior performance and robustness for the thinner barrier layer attributed to the reduced mechanical...

IEEE/MTT-S International Microwave Symposium (IMS 2020), Aug 2020, Los Angeles, CA, United States. Session Tu3H - Advances in Microwave Semiconductor Devices, paper Tu3H-2, 285-288, ⟨10.1109/IMS30576.2020.9223971⟩. ⟨hal-03043653⟩