Publicaciones

Affichage de 3541 à 3550 sur 16092


  • Article dans une revue

A parametric technique for trap characterization in AlGaN/GaN HEMTs

Steven Duffy, Brahim Benbakhti, Wei Zhang, Khaled Ahmeda, Karol Kalna, Mohammed Boucherta, Maghnia Mattalah, Hassane Ouazzani Chahdi, Nour Eddine Bourzgui, Ali Soltani

A new parametric and cost-effective technique is developed to decouple the mechanisms behind current degradation in AlGaN/GaN high-electron mobility transistors (HEMTs) under a normal device operation: self-heating and charge trapping. Our unique approach investigates charge trapping using both...

IEEE Transactions on Electron Devices, 2020, 67 (5), pp.1924-1930. ⟨10.1109/TED.2020.2980329⟩. ⟨hal-03142223⟩

  • Article dans une revue

Surface spin magnetism controls the polarized exciton emission from CdSe nanoplatelets

Elena V Shornikova, Aleksandr A Golovatenko, Dmitri R Yakovlev, Anna V Rodina, Louis Biadala, Gang Qiang, Alexis Kuntzmann, Michel Nasilowski, Benoit Dubertret, Anatolii Polovitsyn, Iwan Moreels, Manfred Bayer

The surface of nominally diamagnetic colloidal CdSe nanoplatelets can demonstrate para-magnetism owing to the uncompensated spins of dangling bonds (DBSs). We reveal that by optical spectroscopy in high magnetic fields up to 15 Tesla using the exciton spin as probe of the surface magnetism. The...

Nature Nanotechnology, 2020, 15, pp.277-282. ⟨10.1038/s41565-019-0631-7⟩. ⟨hal-02394926⟩

  • Article dans une revue

Pd nanoparticles supported on reduced graphene oxide as an effective and reusable heterogeneous catalyst for the Mizoroki–Heck coupling reaction

Maryam Mirza‐aghayan, Marzieh Mohammadi, Ahmed Addad, Rabah Boukherroub

Applied Organometallic Chemistry, 2020, 34 (4), ⟨10.1002/aoc.5524⟩. ⟨hal-03090066⟩

  • Article dans une revue

Metalorganic chemical vapor phase epitaxy growth of buffer layers on 3C-SiC/Si(111) templates for AlGaN/GaN high electron mobility transistors with low RF losses

Eric Frayssinet, Luan Nguyen, Marie Lesecq, N. Defrance, Maxime Garcia Barros, Rémi Comyn, Thi Huong Ngo, Marcin Zielinski, Marc Portail, Jean-Claude de Jaeger, Yvon Cordier

Herein, the interest of cubic silicon carbide as a template for the growth of AlGaN/ GaN high electron mobility transistor (HEMT) heterostructures on silicon substrates for high-frequency operation is shown. On the one hand, 0.6-0.8 μm-thick 3C-SiC grown by chemical vapor deposition on intrinsic...

Physica Status Solidi A (applications and materials science), 2020, 217 (7), pp.1900760. ⟨10.1002/pssa.201900760⟩. ⟨hal-02929058⟩

  • Article dans une revue

Unravelling local environments in mixed TiO2–SiO2 thin films by XPS and ab initio calculations

Pavel Ondračka, David Nečas, Michèle Carette, Stéphane Elisabeth, David Holec, Agnès A. Granier, Antoine Goullet, Lenka Zajíčková, Mireille Richard-Plouet

Mixed TixSi1−xO2 oxide can exhibit a partial phase separation of the TiO2 and SiO2 phases at the atomic level. The quantification of TiO2-SiO2 mixing in the amorphous material is complicated and was so far done mostly by infrared spectroscopy. We developed a new approach to the fitting of X-ray...

Applied Surface Science, 2020, 510, pp.145056. ⟨10.1016/j.apsusc.2019.145056⟩. ⟨hal-02507953⟩