Publicaciones

• Article dans une revue

High performance of 3D silicon nanowires array@CrN for electrochemical capacitors

Abdelouadoud Guerra, Emile Haye, Amine Achour, Maxime Harnois, Toufik Hadjersi, Jean-Francois Colomer, Jean-Jacques Pireaux, Stéphane Lucas, Rabah Boukherroub

Silicon nanowire (SiNW) arrays were coated with chromium nitride (CrN) for use as supercapacitor electrodes. The CrN layer of different thicknesses was deposited onto SiNWs using bipolar magnetron sputtering method. The areal capacitance of the SiNWs-CrN, as measured in 0.5 M HSO electrolyte, was...

Nanotechnology, 2020, 31 (3), pp.035407. ⟨10.1088/1361-6528/ab4963⟩. ⟨hal-02367944⟩

• Article dans une revue

Chalcogenide glasses for innovation in applied science: fundamental issues and new insights

Carlo Massobrio, Assil Bouzid, Mauro Boero, Guido Ori, Évelyne Martin, Sébastien Le Roux

We provide an overview of what has been accomplished by our team, since 1998, in the area of firstprinciples molecular dynamics (FPMD) modeling of glassy chalcogenides, a prototypical family of network disordered materials. After a broad introduction that defines the main motivation and strategy of...

Journal of Physics D: Applied Physics, 2020, 53 (3), pp.033002. ⟨10.1088/1361-6463/ab48a4⟩. ⟨hal-02349413⟩

• Communication dans un congrès

[Invited] Exploiting the THz synchrotron radiation at its highest resolution and in a broadband fashion using heterodyne techniques

Marie-Aline Martin-Drumel, O. Pirali, S. Eliet, Z. Buchanan, J. Turut, P. Roy, Francis Hindle, Jean-Francois Lampin, Gaël Mouret

résumé

SOLEIL Users’ Meeting, Jan 2020, Gif sur Yvette, France. ⟨hal-04410769⟩

• Article dans une revue

Thermal response and correlation between mobility and kink effect in GaN HEMTs

Mohammad A. Alim, S. Afrin, A. A. Rezazadeh, Christophe Gaquière

This work notices the relation among the kink effect and the mobility in AlGaN/GaN HEMT and its response to temperature. The kink phenomenon found in transistor behaviour are carefully characterized at persuade point which is straightaway linked to the shallow traps positioned underneath the...

Microelectronic Engineering, 2020, 219, 111148, 5 p. ⟨10.1016/j.mee.2019.111148⟩. ⟨hal-03322821⟩

• Communication dans un congrès

Sensors based on AlGaN/GaN HEMT for fast H₂ and O₂ detection and measurement at high temperature

Hassane Ouazzani Chahdi, Omar Helli, Nour Eddine Bourzgui, Leo Breuil, David Danovitch, Paul B Voss, Suresh Sundaram, Vincent Aubry, Yacine Halfaya, Abdallah Ougazzaden, Jean-Paul Salvestrini, Hassan Maher, Ali Soltani

Gas sensors based on AlGaN/GaN transistors are fabricated using platinum gate to detect and to quantify H₂ (1.5-10%) and O₂ (1.5-100%) species at high temperature (500 °C). The metrics ΔI/Δt measured within the 5 first seconds of the transient response...

• Article dans une revue

Ultraviolet‐Durable Flexible Nonfullerene Organic Solar Cells Realized by a Hybrid Nanostructured Transparent Electrode

Tao Xu, Chunliu Gong, Shuanglong Wang, Hong Lian, Weixia Lan, Gaëtan Lévêque, B. Grandidier, Jerome Plain, Renaud Bachelot, Bin Wei, Furong Zhu

A significant enhancement in ultraviolet (UV)-durable indium tin oxide (ITO)-free flexible nonfullerene organic solar cells (OSCs) is demonstrated using a hybrid nanostructured flexible transparent electrode (FTE), comprising a mixture of 0D silver nanoparticles, 1D Ag nanowires, and 2D exfoliated...

Solar RRL, 2020, 4 (5), pp.1900522. ⟨10.1002/solr.201900522⟩. ⟨hal-03418472⟩

• Article dans une revue

The limits of edge bead planarization and surface levelling in spin-coated liquid films

S. Arscott

A model is presented here to predict fluid reflow in a viscous liquid film having time-dependent physical properties. The model is applied to the practical example of the reflow planarization (surface levelling) of 'edge bead' features resulting from the spin coating process. During the...

Journal of Micromechanics and Microengineering, 2020, 30, pp.025003. ⟨10.1088/1361-6439/ab60be⟩. ⟨hal-02417965⟩

• Article dans une revue

Vertical breakdown of GaN on Si due to V-pits

S. Besendörfer, E. Meissner, A. Tajalli, M. Meneghini, J. Freitas, J. Derluyn, F Medjdoub, G. Meneghesso, J. Friedrich, T. Erlbacher

Methodology for the investigation of threading dislocations as a source of vertical leakage in AlGaN/GaN-HEMT heterostructures for power devices

Journal of Applied Physics, 2020, 127 (1), pp.015701. ⟨10.1063/1.5129248⟩. ⟨hal-02429980⟩

• Article dans une revue

Historical and Foundational Details on the Method of Infinite Descent: Every Prime Number of the Form 4n + 1 is the Sum of Two Squares

Paolo Bussotti, Raffaele Pisano

Foundations of Science, 2020, 25 (3), pp.671-702. ⟨10.1007/s10699-019-09642-3⟩. ⟨hal-04507520⟩

• Communication dans un congrès

Power Domain NOMA Without SIC in Downlink CSS-Based LoRa Networks

Angesom Ataklity Tesfay, Eric Pierre Simon, Ido Nevat, Laurent Clavier

Low Power Wide Area Network, such as LoRa is one of the main building blocks of the Internet of Things. One of the main issues is to scale up the number of devices and one strong limitation comes from the downlink communication. In fact, the access point is constrained by the duty cycle, therefore...

23rd International Conference Distributed Computer and Communication Networks, DCCN 2020, Sep 2020, Moscow, Russia. pp.3-13, ⟨10.1007/978-3-030-66471-8_1⟩. ⟨hal-03219995⟩