Publicaciones

Affichage de 3631 à 3640 sur 16064


  • Article dans une revue

Frequency down-conversion of multiline CO laser into the THz range with ZnGeP2 crystal

Andrey A Ionin, Igor Kinyaevskiy, Adily Sagitova, Yury Klimachev, Jean-Francois Lampin

Optical and Quantum Electronics, 2020, 52 (1), pp.4985. ⟨10.1007/s11082-019-2116-1⟩. ⟨hal-03101698⟩

  • Article dans une revue

Plasmonic-based sensitivity enhancement of a Goos-Hanchen shift biosensor using transition metal dichalcogenides: a theoretical insight

Guo Y, Singh Nm, Das Cm, Ouyang Ql, Kang Lx, Li Kb, Philippe Coquet, Yong Kt

New Journal of Chemistry, 2020, 44 (37), pp.16144-16151. ⟨10.1039/d0nj01890b⟩. ⟨hal-03091467⟩

  • Communication dans un congrès

Development of Surface Acoustic Wave pressure sensors for monitoring concrete structures

Hassan Alhousseini, Marc Duquennoy, Christian Courtois, Mohammadi Ouaftouh, Nikolay Smagin, Frédéric Rivart, Marc Poorteman, Maurice Gonon, Gregory Matric, Mohamed Rguiti, Christine Peligris

For many years surface acoustic waves (SAW) have been used in manufacturing electronic components for industrial and sensing applications. Due to the absence of an embedded electronic system and the possibility of wireless communication this technology can offer a great solution for sensing in...

Forum Acusticum, Dec 2020, Lyon, France. pp.2849-2852, ⟨10.48465/fa.2020.0798⟩. ⟨hal-03240328⟩

  • Communication dans un congrès

IR micro-spectroscopy and micro-tomography of isolated murchison grains in preparation of the Hayabusa2 sample return

R. Brunetto, A. Aléon-Toppani, S. Rubino, D. Baklouti, F. Borondics, Z. Dionnet, Z. Djouadi, C. Lantz, T. Nakamura, M. Takahashi, David Troadec, A. Tsuchiyama

We report the incorporation of IR-CT and IR hyperspectral imaging in the multi-analytical sequence of the MIN-PET CG Hayabusa2 preliminary examination team.

Lunar and Planetary Science Conference, Mar 2020, Houston, United States. 1135, 2 p. ⟨hal-03090397⟩

  • Communication dans un congrès

Electrothermal modeling of GaN power transistor for high frequency power converter design

Loris Pace, Florian Chevalier, Arnaud Videt, N. Defrance, Nadir Idir, Jean-Claude de Jaeger

This work proposes the electrothermal modeling of a packaged GaN power transistor in order to evaluate by simulation its performances in a 200 W - 1 MHz DC/DC converter. The complete electrical modeling of the high frequency converter using EM-circuit co-simulations is presented. After validation...

22nd European Conference on Power Electronics and Applications (EPE ECCE Europe), Sep 2020, Lyon, France. pp.1-10, ⟨10.23919/EPE20ECCEEurope43536.2020.9215782⟩. ⟨hal-03276912⟩

  • Article dans une revue

High-frequency limits of graphene field-effect transistors with velocity saturation

Quentin Wilmart, Mohamed Boukhicha, Holger Graef, David Mele, José Palomo, Michael Rosticher, Takashi Taniguchi, Kenji Watanabe, Vincent Bouchiat, Emmanuel Baudin, Jean-Marc Berroir, Erwann Bocquillon, Gwendal Fève, Emiliano Pallecchi, Bernard Plaçais

The current understanding of physical principles governing electronic transport in graphene field effect transistors (GFETs) has reached a level where we can model quite accurately device operation and predict intrinsic frequency limits of performance. In this work, we use this knowledge to analyze...

Applied Sciences, 2020, 10 (2), pp.446. ⟨10.3390/app10020446⟩. ⟨hal-02520621⟩

  • Communication dans un congrès

Multi-view deep features for robust facial kinship verification

Oualid Laiadi, Abdelmalik Ouamane, Abdelhamid Benakcha, Abdelmalik Taleb-Ahmed, Abdenour Hadid

Automatic kinship verification from facial images is an emerging research topic in machine learning community. In this paper, we proposed an effective facial features extraction model based on multi-view deep features. Thus, we used four pre-trained deep learning models using eight features layers...

15th IEEE International Conference on Automatic Face and Gesture Recognition (FG), Nov 2020, Buenos Aires, Argentina. pp.743-747, ⟨10.1109/FG47880.2020.00118⟩. ⟨hal-03322818⟩

  • Autre publication scientifique

Optimising GaN heterostructures for 5G

Markus Behet, Joff Derluyn, Stefan Degroote, Marianne Germain, F Medjdoub

Combining AlN or InAlN barriers with SiN passivation layers leads to exceptional performance for GaN RF devices, regardless of the choice of substrate.

Compound Semiconductors, 26, 1, 2020. ⟨hal-03342380⟩