Publicaciones

Affichage de 3671 à 3680 sur 16095


  • Article dans une revue

Highly efficient conversion of the nitroarenes to amines at the interface of a ternary hybrid containing silver nanoparticles doped reduced graphene oxide/ graphitic carbon nitride under visible light

Anurag Kumar, Bappi Paul, Rabah Boukherroub, Suman Jain

Journal of Hazardous Materials, 2020, 387, pp.121700. ⟨10.1016/j.jhazmat.2019.121700⟩. ⟨hal-03090040⟩

  • Communication dans un congrès

A fully-integrated high-isolation transfer switch for G-band in-situ reflectometer applications

Walid Aouimeur, Marc Margalef-Rovira, Estelle Lauga-Larroze, Daniel Gloria, Christophe Gaquière, Issa Alaji, Jean-Daniel Arnould

This paper describes two fully-integrated transfer switches designed for in-situ reflectometers and Built-In Self-Test applications (BIST) in the 140 to 220 GHz band (G-band). The proposed switches were designed in the STMicroelectronics 55-nm BiCMOS technology using the Single-Shunt and the Double...

IEEE MTT-S International Conference on Microwaves for Intelligent Mobility, ICMIM 2020, Nov 2020, Linz, Austria. 4 p., ⟨10.1109/ICMIM48759.2020.9299098⟩. ⟨hal-02934668⟩

  • Article dans une revue

Electrothermal patches driving the transdermal delivery of insulin

Quentin Pagneux, Ran Ye, Li Chengnan, Alexandre Barras, Nathalie Hennuyer, Bart Staels, D. Caina, J. Osses, Amar Abderrahmani, Valérie Plaisance, Valérie Pawlowski, Rabah Boukherroub, Sorin Melinte, Sabine Szunerits

Nanoscale Horizons, 2020, 5 (4), pp.663-670. ⟨10.1039/c9nh00576e⟩. ⟨hal-03090048⟩

  • Article dans une revue

A parametric technique for trap characterization in AlGaN/GaN HEMTs

Steven Duffy, Brahim Benbakhti, Wei Zhang, Khaled Ahmeda, Karol Kalna, Mohammed Boucherta, Maghnia Mattalah, Hassane Ouazzani Chahdi, Nour Eddine Bourzgui, Ali Soltani

A new parametric and cost-effective technique is developed to decouple the mechanisms behind current degradation in AlGaN/GaN high-electron mobility transistors (HEMTs) under a normal device operation: self-heating and charge trapping. Our unique approach investigates charge trapping using both...

IEEE Transactions on Electron Devices, 2020, 67 (5), pp.1924-1930. ⟨10.1109/TED.2020.2980329⟩. ⟨hal-03142223⟩

  • Article dans une revue

Low on-resistance and low trapping effects in 1200 V superlattice GaN-on-silicon heterostructures

Riad Kabouche, Idriss Abid, Roland Püsche, Joff Derluyn, Stefan Degroote, Marianne Germain, Alaleh Tajalli, Matteo Meneghini, Gaudenzio Meneghesso, F Medjdoub

Herein, the development of gallium nitride on silicon (GaN-on-Si) heterostructures targeting 1200 V power applications is reported. In particular, it is shown that the insertion of superlattices (SLs) into the buffer layers allows pushing the vertical breakdown voltage above 1200 V without...

Physica Status Solidi A (applications and materials science), 2020, Special Issue: Nitride Semiconductors, 217 (7), pp.1900687. ⟨10.1002/pssa.201900687⟩. ⟨hal-02363323⟩

  • Article dans une revue

Fabrication of superhydrophobic/superoleophilic functionalized reduced graphene oxide/polydopamine/PFDT membrane for efficient oil/water separation

Yuanyuan Cheng, Alexandre Barras, Shixiang Lu, Wenguo Xu, Sabine Szunerits, Rabah Boukherroub

Separation and Purification Technology, 2020, 236, pp.116240. ⟨10.1016/j.seppur.2019.116240⟩. ⟨hal-03090045⟩