Publicaciones

Affichage de 3821 à 3830 sur 16103


  • Communication dans un congrès

Multi-view deep features for robust facial kinship verification

Oualid Laiadi, Abdelmalik Ouamane, Abdelhamid Benakcha, Abdelmalik Taleb-Ahmed, Abdenour Hadid

Automatic kinship verification from facial images is an emerging research topic in machine learning community. In this paper, we proposed an effective facial features extraction model based on multi-view deep features. Thus, we used four pre-trained deep learning models using eight features layers...

15th IEEE International Conference on Automatic Face and Gesture Recognition (FG), Nov 2020, Buenos Aires, Argentina. pp.743-747, ⟨10.1109/FG47880.2020.00118⟩. ⟨hal-03322818⟩

  • Article dans une revue

Experimental Characterization of A Piezoelectric Transducer Array Taking into Account Crosstalk Phenomenon

Abdelmajid Bybi, Driss Khouili, Christian Granger, Mohammed Garoum, Ahmed Mzerd, Anne-Christine Hladky

Ultrasonic transducer arrays are generally composed of several piezoelectric elements arranged in 1D or 2D ways. Crosstalk is an undesirable phenomenon decreasing the performance of these devices. It generates parasitic displacements at the elements' radiating surfaces, which changes the...

International Journal of Engineering and Technology Innovation, 2020, 10 (1), pp.01-14. ⟨10.46604/ijeti.2020.4348⟩. ⟨hal-03019872⟩

  • Proceedings/Recueil des communications

Galileo’s Free Fall into History of Physics & Nature of Science Teaching

Raffaele Pisano, Vincenzo Cioci

Proceedings of the 38th Annual Conference Società Italiana degli Storici della Fisica e dell'Astronomia, Pavia University Press, pp.271-278, 2020, ISBN: 978-88-6952-058-7. ⟨10.48244/9788869520594/c33⟩. ⟨hal-04512929⟩

  • Autre publication scientifique

Optimising GaN heterostructures for 5G

Markus Behet, Joff Derluyn, Stefan Degroote, Marianne Germain, F Medjdoub

Combining AlN or InAlN barriers with SiN passivation layers leads to exceptional performance for GaN RF devices, regardless of the choice of substrate.

Compound Semiconductors, 26, 1, 2020. ⟨hal-03342380⟩