Publicaciones

• Communication dans un congrès

Frequency-domain simulation of power electronic systems based on multi-topology equivalent sources modelling method

Stephane Vienot, Arnaud Videt, Nadir Idir, Lamine Kone, Sebastien Weiss, Frederic Lafon

ElectroMagnetic Interference (EMI) simulation of power converters helps engineers in the design process. In this paper, we describe a frequency-domain simulation method based on the Multi-Topology Equivalent Sources (MTES) model. The aim is to reproduce the non-linear behavior of power switches for...

22nd European Conference on Power Electronics and Applications (EPE ECCE Europe), Sep 2020, Lyon, France. 10 p., ⟨10.23919/EPE20ECCEEurope43536.2020.9215867⟩. ⟨hal-03322822⟩

• Communication dans un congrès

SVM Assisted Primary User-Detection for Non-Cooperative Cognitive Radio Networks

Kais Bouallegue, Matthieu Crussière, Sofiane Kharbech

This paper presents a new blind spectrum sensing (SS) algorithm based on a machine learning model: the radial basis function support-vector machines (RBF-SVM). As features, the introduced approach uses statistical tests that are based on the eigenvalues of the received signals covariance matrix....

2020 IEEE Symposium on Computers and Communications, ISCC 2020, Jul 2020, Rennes, France. pp.9219601, ⟨10.1109/ISCC50000.2020.9219601⟩. ⟨hal-03003443⟩

• Article dans une revue

Investigation of resistive switching and transport mechanisms of Al ₂O₃/TiO_2−<i>x</i> memristors under cryogenic conditions (1.5 K)

Yann Beilliard, François Paquette, Frédéric Brousseau, Serge Ecoffey, F. Alibart, Dominique Drouin

Resistive switching and transport mechanisms of Al2O3/TiO2−x memristor crosspoint devices have been investigated at cryogenic temperatures down to 1.5 K, for the future development of memristor-based cryogenic electronics. We report successful resistive switching of our devices in the temperature...

• Article dans une revue

Robust Fano resonance in a topological mechanical beam

Wei Wang, Yabin Jin, Wan Wang, Bernard Bonello, Bahram Djafari-Rouhani, Romain Fleury

The advances in topological condensed matter physics enable the manipulation of classic waves in different ways, such as unidirectional propagation featuring the suppression of backscattering and the robustness against impurities and disorder, making it possible to endow classical phenomena with...

Physical Review B, 2020, 101 (2), pp.024101. ⟨10.1103/PhysRevB.101.024101⟩. ⟨hal-03140628⟩

• Article dans une revue

Power-efficient reliable register file for aggressive-environment applications

Ihsen Alouani, Hamzeh Ahangari, Özcan Özturk, Smail Niar

In a context of increasing demands for on-board data processing, insuring reliability under reduced power budget is a serious design challenge for embedded system manufacturers. Particularly, embedded processors in aggressive environments need to be designed with error hardening as a primary goal,...

IET Computers & Digital Techniques, 2020, 14 (1), pp.1-8. ⟨10.1049/iet-cdt.2018.5047⟩. ⟨hal-03322796⟩

• Article dans une revue

Negatively Charged Excitons in CdSe Nanoplatelets

Elena V Shornikova, Dmitri R Yakovlev, Louis Biadala, Scott A Crooker, Vasilii V Belykh, Mikhail V Kochiev, Alexis Kuntzmann, Michel Nasilowski, Benoit Dubertret, Manfred Bayer

Energy Trion Exciton The low-temperature emission spectrum of CdSe colloidal nanoplatelets (NPLs) consists of two narrow lines. The high-energy line stems from the recombination of neutral excitons. The origin of the low-energy line is currently debated. We experimentally study the spectral shift,...

Nano Letters, 2019, 20 (2), pp.1370-1377. ⟨10.1021/acs.nanolett.9b04907⟩. ⟨hal-03000677⟩

• Article dans une revue

Velocity saturation effect on low frequency noise in short channel single layer graphene field effect transistors (FETs)

Nikolaos Mavredakis, Wei Wei, Emiliano Pallecchi, Dominique Vignaud, Henri Happy, Ramon Garcia Cortadella, Andrea Bonaccini Calia, Jose Garrido, David Jiménez

Graphene devices for analog and radio frequency (RF) applications are prone to low frequency noise (LFN) due to its up conversion to undesired phase noise at higher frequencies. Such applications demand the use of short channel graphene transistors (GFETs) that operate at high electric fields in...

ACS Applied Electronic Materials, 2019, 1 (12), pp.2626-2636. ⟨10.1021/acsaelm.9b00604⟩. ⟨hal-03133324⟩

• Article dans une revue

Self-template synthesis of ZnS/Ni3S2 as advanced electrode material for hybrid supercapacitors

Yuan Zhang, Ning Cao, Min Li, Sabine Szunerits, Ahmed Addad, Pascal Roussel, Rabah Boukherroub

Electrochimica Acta, 2019, 328, pp.135065. ⟨10.1016/j.electacta.2019.135065⟩. ⟨hal-03090080⟩

• Thèse

Caractérisation et modélisation de composants terahertz, Charactersation and modeling of terahertz devices

Kévin Froberger

Le domaine térahertz est un domaine de fréquences de plus en plus étudié à cause des propriétés particulières de ce rayonnement. La faible énergie des photons permet notamment de faire de l’imagerie médicale, du contrôle non destructif dans l’industrie ou encore d’étudier les astres qui nous..., The terahertz domain is a frequency range, which interest keeps growing because of its properties. Because of the low energy of the photons, it becomes possible to use it for medical imaging, non destructive testing in the industry or even learn about the celestial objects around us. Its high...

Micro et nanotechnologies/Microélectronique. Université de Lille, 2019. Français. ⟨NNT : 2019LILUI102⟩. ⟨tel-03623282⟩

• Thèse

Fabrication de transistors HEMTs AlGaN/GaN de haute fiabilité sur substrat free-standing GaN de haute qualité, Fabrication of high reliability AlGaN / GaN HEMTs on high quality GaN free-standing substrate

Mohamed Reda Irekti

Le nitrure de gallium (GaN) constitue le meilleur candidat pour la réalisation de transistors de type HEMT de puissance fonctionnant à haute fréquence. A l’heure actuelle, en raison de la faible disponibilité de substrats GaN, la plupart des dispositifs sont fabriqués par hétéro-épitaxie sur des..., Gallium nitride is the best candidate for the fabrication of High Electron Mobility Transistors for high power/high frequency applications. Due to the lack of availability of GaN substrates, most of devices are currently fabricated by hetero-epitaxy on Si, SiC or sapphire substrates. None of these...

Micro et nanotechnologies/Microélectronique. Université de Lille, 2019. Français. ⟨NNT : 2019LILUI095⟩. ⟨tel-03624139⟩