Publicaciones

• Communication dans un congrès

Contrôle non destructif d’une structure à partir d’un capteur bi-statique micro-ondes embarqué sur robots mobiles collaboratifs

Bilal Daass, Adem Rouibah, Kamel Haddadi, Denis Pomorski

XXIèmes Journées Nationales Microondes (IEEE), May 2019, Caen, France. ⟨hal-02435636⟩

• Article dans une revue

Neutron irradiation effects on the electrical properties of previously electrically stressed AlInN/GaN HEMTs

Y. Guhel, J. Trolet, P. Mary, Christophe Gaquière, B. Boudart, Sébastien Petitdidier

This paper analyses the neutron irradiation impact on the electrical performances of unstressed, on-state, off-state and Negative Gate Bias (NGB) stressed AlInN/GaN HEMTs. These irradiations have resulted in the creation of electron traps that are causing a decrease in the drain current and an...

IEEE Transactions on Nuclear Science, 2019, 66 (5), pp.810 - 819. ⟨10.1109/TNS.2019.2908055⟩. ⟨hal-02117222⟩

• Article dans une revue

Efficient oil/water separation by superhydrophobic CuxS coated on copper mesh

Maryam Khosravi, Saeid Azizian, Rabah Boukherroub

Separation and Purification Technology, 2019, 215, pp.573-581. ⟨10.1016/j.seppur.2019.01.039⟩. ⟨hal-02373197⟩

• Article dans une revue

Composition modulation by twinning in InAsSb nanowires Composition modulation by twinning in InAsSb nanowires

M. Schnedler, T Xu, V Portz, J-P Nys, S.R. Plissard, Maxime Berthe, H Eisele, R E Dunin-Borkowski, P Ebert, B. Grandidier

We observe a composition modulated axial heterostructure in zincblende (ZB) InAs 0.90 Sb 0.10 nanowires initiated by pseudo-periodic twin boundaries using scanning tunneling microscopy. The twin boundaries exhibit four planes with reduced Sb concentration due to a lower Sb incorporation during...

Nanotechnology, 2019, 30 (32), ⟨10.1088/1361-6528/aaf9ce⟩. ⟨hal-02332273⟩

• Article dans une revue

Importance of point defect reactions for the atomic-scale roughness of III-V nanowire sidewalls

Adrian Díaz Álvarez, Nemanja Peric, Nathali Alexandra Franchina Vergel, Jean-Philippe Nys, Maxime Berthe, Gilles Patriarche, Jean-Christophe Harmand, Philippe Caroff, S.R. Plissard, Philipp Ebert, Tao Xu, B. Grandidier

The surface morphology of III-V semiconductor nanowires (NWs) protected by an arsenic cap and subsequently evaporated in ultrahigh vacuum is investigated with scanning tunneling microscopy and scanning transmission electron microscopy. We show that the changes of the surface morphology as a...

Nanotechnology, 2019, 30 (32), pp.324002. ⟨10.1088/1361-6528/ab1a4e⟩. ⟨hal-02332261⟩

• Article dans une revue

Highly improved photoreduction of carbon dioxide to methanol using cobalt phthalocyanine grafted to graphitic carbon nitride as photocatalyst under visible light irradiation

Anurag Kumar, Pankaj Kumar Prajapati, M.S. Aathira, Amit Bansiwal, Rabah Boukherroub, Suman L Jain

Journal of Colloid and Interface Science, 2019, 543, pp.201-213. ⟨10.1016/j.jcis.2019.02.061⟩. ⟨hal-02373205⟩

• Communication dans un congrès

Variations sur le thème de l'évaluation de soutenances

Julien Pellé, Dominique Bernier, Philippe Champagne, Samuel Dupont

6ème colloque pédagogie et formation, Groupe INSA, May 2019, Bourges, France. pp.SA.102. ⟨hal-04467583⟩

• Article dans une revue

Scalable Modeling of Transient Self-Heating of GaN High-Electron-Mobility Transistors Based on Experimental Measurements

A. Cutivet, G. Pavlidis, B. Hassan, M. Bouchilaoun, C. Rodriguez, Ali Soltani, S. Graham, F. Boone, H. Maher

Abstract: This paper details an extraction procedure to fully model the transient self-heating of transistors from a GaN HEMT technology. Frequency-resolved gate resistance thermometry (f-GRT) is used to extract the thermal impedance of HEMTs with various gate widths. A fully scalable analytical...

IEEE Transactions on Electron Devices, 2019, 66 (5), pp.2139-2145. ⟨10.1109/TED.2019.2906943⟩. ⟨hal-02273386⟩

• Communication dans un congrès

A new memory reliability technique for multiple bit upsets mitigation

Alexandre Chabot, Ihsen Alouani, Smail Niar, Reda Nouacer

Technological advances make it possible to produce increasingly complex electronic components. Nevertheless, these advances are convoyed by an increasing sensitivity to operating conditions and an accelerated aging process. In safety critical applications, it is vital to provide solutions to avoid...

16th ACM International Conference on Computing Frontiers, Apr 2019, Alghero, Italy. pp.145-152, ⟨10.1145/3310273.3321564⟩. ⟨hal-03522687⟩

• Communication dans un congrès

Demonstration of GaN-on-silicon material system operating up to 3 kilovolts with reduced trapping effects

Riad Kabouche, Idriss Abid, Malek Zegaoui, Kai Cheng, F Medjdoub

We report on the first demonstration of low trapping effects up to 3000 V within GaN-on-silicon epitaxial layers using a local substrate removal (LSR) followed by a thick backside ultra-wide-bandgap AlN deposition. The fabricated AlGaN/GaN devices deliver low specific on-resistance below 10 mΩcm 2...

International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019, Apr 2019, Minneapolis, United States. ⟨hal-02356891⟩