Publicaciones

• Article dans une revue

Modeling the Electroelastic Moduli of Porous Textured Piezoceramics

Antoine Balé, Rémi Rouffaud, Anne-Christine Hladky, Franck Levassort, Pascal Marchet

IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 2019, 66 (5), pp.949-957. ⟨10.1109/TUFFC.2019.2898519⟩. ⟨hal-02113684⟩

• Article dans une revue

Neutron irradiation effects on the electrical properties of previously electrically stressed AlInN/GaN HEMTs

Y. Guhel, J. Trolet, P. Mary, Christophe Gaquière, B. Boudart, Sébastien Petitdidier

This paper analyses the neutron irradiation impact on the electrical performances of unstressed, on-state, off-state and Negative Gate Bias (NGB) stressed AlInN/GaN HEMTs. These irradiations have resulted in the creation of electron traps that are causing a decrease in the drain current and an...

IEEE Transactions on Nuclear Science, 2019, 66 (5), pp.810 - 819. ⟨10.1109/TNS.2019.2908055⟩. ⟨hal-02117222⟩

• Article dans une revue

Gradient index phononic crystals and metamaterials

Yabin Jin, Bahram Djafari-Rouhani, Daniel Torrent

Abstract Phononic crystals and acoustic metamaterials are periodic structures whose effective properties can be tailored at will to achieve extreme control on wave propagation. Their refractive index is obtained from the homogenization of the infinite periodic system, but it is possible to locally...

Nanophotonics, 2019, 8 (5), pp.685-701. ⟨10.1515/nanoph-2018-0227⟩. ⟨hal-03140652⟩

• Article dans une revue

Optimization of inter-subband absorption of InGaAsSb/GaAs quantum wells structure

Lynda Chenini, Abdelkader Aissat, Jean-Pierre Vilcot

In this work, we theoretically investigate the structural dependence of intersubband absorption of InGaAsSb/GaAs single quantum well structures. We begin by analyzing the impact of In and Sb incorporation on the critical thickness, conduction band offset and band gap energy. The first two electron...

Superlattices and Microstructures, 2019, Superlattices and Microstructures, 129, pp.115-123. ⟨10.1016/j.spmi.2019.03.015⟩. ⟨hal-02409453⟩

• Communication dans un congrès

Contrôle non destructif d’une structure à partir d’un capteur bi-statique micro-ondes embarqué sur robots mobiles collaboratifs

Bilal Daass, Adem Rouibah, Kamel Haddadi, Denis Pomorski

XXIèmes Journées Nationales Microondes (IEEE), May 2019, Caen, France. ⟨hal-02435636⟩

• Article dans une revue

Efficient oil/water separation by superhydrophobic CuxS coated on copper mesh

Maryam Khosravi, Saeid Azizian, Rabah Boukherroub

Separation and Purification Technology, 2019, 215, pp.573-581. ⟨10.1016/j.seppur.2019.01.039⟩. ⟨hal-02373197⟩

• Article dans une revue

Composition modulation by twinning in InAsSb nanowires Composition modulation by twinning in InAsSb nanowires

M. Schnedler, T Xu, V Portz, J-P Nys, S.R. Plissard, Maxime Berthe, H Eisele, R E Dunin-Borkowski, P Ebert, B. Grandidier

We observe a composition modulated axial heterostructure in zincblende (ZB) InAs 0.90 Sb 0.10 nanowires initiated by pseudo-periodic twin boundaries using scanning tunneling microscopy. The twin boundaries exhibit four planes with reduced Sb concentration due to a lower Sb incorporation during...

Nanotechnology, 2019, 30 (32), ⟨10.1088/1361-6528/aaf9ce⟩. ⟨hal-02332273⟩

• Article dans une revue

Importance of point defect reactions for the atomic-scale roughness of III-V nanowire sidewalls

Adrian Díaz Álvarez, Nemanja Peric, Nathali Alexandra Franchina Vergel, Jean-Philippe Nys, Maxime Berthe, Gilles Patriarche, Jean-Christophe Harmand, Philippe Caroff, S.R. Plissard, Philipp Ebert, Tao Xu, B. Grandidier

The surface morphology of III-V semiconductor nanowires (NWs) protected by an arsenic cap and subsequently evaporated in ultrahigh vacuum is investigated with scanning tunneling microscopy and scanning transmission electron microscopy. We show that the changes of the surface morphology as a...

Nanotechnology, 2019, 30 (32), pp.324002. ⟨10.1088/1361-6528/ab1a4e⟩. ⟨hal-02332261⟩

• Communication dans un congrès

Variations sur le thème de l'évaluation de soutenances

Julien Pellé, Dominique Bernier, Philippe Champagne, Samuel Dupont

6ème colloque pédagogie et formation, Groupe INSA, May 2019, Bourges, France. pp.SA.102. ⟨hal-04467583⟩

• Article dans une revue

Scalable Modeling of Transient Self-Heating of GaN High-Electron-Mobility Transistors Based on Experimental Measurements

A. Cutivet, G. Pavlidis, B. Hassan, M. Bouchilaoun, C. Rodriguez, Ali Soltani, S. Graham, F. Boone, H. Maher

Abstract: This paper details an extraction procedure to fully model the transient self-heating of transistors from a GaN HEMT technology. Frequency-resolved gate resistance thermometry (f-GRT) is used to extract the thermal impedance of HEMTs with various gate widths. A fully scalable analytical...

IEEE Transactions on Electron Devices, 2019, 66 (5), pp.2139-2145. ⟨10.1109/TED.2019.2906943⟩. ⟨hal-02273386⟩