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Affichage de 451 à 460 sur 16120

Article dans une revue

Crystallinity in niobium oxides: A pathway to mitigate two-level-system defects in niobium three-dimensional resonators for quantum applications

Y. Kalboussi, I. Curci, F. Miserque, David Troadec, N. Brun, M. Walls, G. Jullien, F. Eozenou, M. Baudrier, L. Maurice, Q. Bertrand, P. Sahuquet, T. Proslier

Materials imperfections in Nb-based superconducting quantum circuits-in particular, two-levelsystem (TLS) defects-are a major source of decoherence, ultimately limiting the performance of quantum computation and sensing. Thus, identifying and understanding the microscopic origin of possible TLS...

Physical Review Applied, 2025, 23 (4), pp.044023. ⟨10.1103/physrevapplied.23.044023⟩. ⟨hal-05063427⟩

Communication dans un congrès

SnatchML: Hijacking ML Models Without Training Access

Mahmoud Ghorbel, Halima Bouzidi, Ioan Marius Bilasco, Ihsen Alouani

The widespread deployment of Machine Learning (ML) models has been accompanied by the emergence of various attacks that threaten their trustworthiness and raise ethical and societal concerns. One such attack is model hijacking, where an adversary seeks to repurpose a victim model to perform a...

2025 IEEE Conference on Secure and Trustworthy Machine Learning (SaTML), Apr 2025, Copenhagen, Denmark. pp.92-109, ⟨10.1109/SaTML64287.2025.00013⟩. ⟨hal-05148276⟩

Communication dans un congrès

Achieving Avalanche in GaN-on-silicon Diodes

F Medjdoub

Although qualified up to 650 V voltage operation, lateral GaN devices are subject to severe limitations for higher voltage applications such as a large device size, surface trap related reliability concerns or the absence of avalanche breakdown due to the peak electric field at the gate vicinity....

CS International, Apr 2025, Bruxelles (BEL), Belgium. ⟨hal-05344571⟩

Article dans une revue

Aluminum Nanoparticles for Photobleaching Resistance of Quantum Dots in Solution

Théo Duarte de Assuncao, Silvère Schuermans, Thomas Lerond, Jérôme Martin, Davy Gérard, Thomas Maurer, Jérôme Plain, Julien Proust

<div><p>We report on the optical properties of aluminum spherical nanoparticles exhibiting diameters ranging between 2 and 20 nm made by the reduction of aluminum ions in alkane solvents. In the UV-range, the extinction spectroscopy measurements unveiled well-defined surface plasmon...

Journal of Physical Chemistry C, 2025, 129 (15), pp.7541-7549. ⟨10.1021/acs.jpcc.5c00879⟩. ⟨hal-05042592⟩

Autre publication scientifique

Mot d’accueil et présentations CNRS, CSF Electronique et initiative Microélectronique

Mehdi Gmar, Virginie Hoel, Sandrine Beaufils, Pascal Nivesse, Abdelkader Souifi

Présentations CNRS, CSF Electronique et initiative Microélectronique Mehdi Gmar, CNRS Sandrine Beaufils, ACSIEL Alliance Electronique Virginie Hoel, IEMN CNRS Pascal Nivesse, CNRS Abdelkader Souifi, CNRS

Journée: " Les nouvelles frontières de la connectivité Datacom, HPC et IA : quels défis et opportunités ? ", 2025. ⟨hal-05041926⟩

Article dans une revue

A Practical Approach for Internal Energy Tuning in LDI-MS: Porous Silicon Substrates as a Case Study

Clara Whyte Ferreira, Bastien Cabrera-Tejera, Bernard Leyh, Romain Tuyaerts, Gilles Scheen, Yannick Coffinier, Edwin de Pauw, Gauthier Eppe

<div xmlns="http://www.tei-c.org/ns/1.0"><p>This study presents a methodical procedure for optimizing laser desorption/ionization mass spectrometry (LDI-MS) supports using porous silicon (PSi) substrates. The approach involves the use of substituted benzyl-pyridinium salts (...

Journal of The American Society for Mass Spectrometry, 2025, 36, pp.1008 - 1016. ⟨10.1021/jasms.4c00462⟩. ⟨hal-05094662⟩

Article dans une revue

Optimized two-step growth of large surface two-dimensional boron nitride on Ge (001) films by molecular beam epitaxy

Walter Batista Pessoa, Max Franck, Nicolas Nuns, Jarek Dabrowski, Mohamed Achehboune, Jean-Francois Colomer, Luc Henrard, Mindaugas Lukosius, Xavier Wallart, Dominique Vignaud

The growth of two-dimensional boron nitride (2D-BN) thin films on Ge (001) has been studied, with the ultimate goal of integrating this material into Si technology. Molecular beam epitaxy was used in a dedicated ultra-high vacuum chamber. To avoid the formation of thermal pits on heating the Ge...

Applied Surface Science, 2025, 699, pp.163165. ⟨10.1016/j.apsusc.2025.163165⟩. ⟨hal-05039362v2⟩