Publicaciones

• ART

Modeling and optimization of core (p-GaN)-multishell (i-InxGa1-xN/i-GaN/n-Al0.1Ga0.9N /n-GaN) nanowire for photovoltaic applications

Abdelkader Aissat, Fethi Benyettou, Isabelle Berbezier, Jean-Pierre Vilcot

In this work we report a modeling and optimization of a novel core (p-GaN)-multishell (i-InxGa1-xN/i-GaN/n-Al0.1Ga0.9N/n-GaN) coaxial NWs with a total length of about 3 μm and a radius of 0.19 μm. The variation of Indium composition in the i-InxGa1-xN active layer shows that x = 15% is the optimal...

Superlattices and Microstructures, 2018, 120, pp.209-216. ⟨10.1016/j.spmi.2018.05.043⟩. ⟨hal-02409499⟩

• OTHER

Pushing the limits of GaN-based power devices and power electronics

Gaudenzio Meneghesso, Joff Derluyn, Elke Meissner, F Medjdoub, Abhishek Banerjee, Naundorf J., Martin R Rittner

2018, pp.52-55. ⟨hal-03287707⟩

• ART

Graphene-based nanomaterials in innovative electrochemistry

Sabine Szunerits, Rabah Boukherroub

RESEARCH HIGHLIGHTS Graphene and its derivatives play an important role in today's electrochemical based technologies as outlined in this article. Examples are given for energy driven applications and electrocatalytic processes with the aim to replace Pt/C bench mark electrode. The high...

Current Opinion in Electrochemistry, 2018, 10, pp.24-30. ⟨10.1016/j.coelec.2018.03.016⟩. ⟨hal-02189339⟩

• ART

Towards green synthesis of monodisperse Cu nanoparticles: An efficient and high sensitive electrochemical nitrite sensor

Devaraj Manoj, R. Saravanan, Jayadevan Santhanalakshmi, Shilpi Agarwal, Vinod Kumar Gupta, Rabah Boukherroub

Sensors and Actuators B: Chemical, 2018, 266, pp.873-882. ⟨10.1016/j.snb.2018.03.141⟩. ⟨hal-02375187⟩

• ART

AlN/GaN/Sapphire heterostructure for high-temperature packageless acoustic wave devices

F. Bartoli, Thierry Aubert, Mohammed Moutaouekkil, Jérémy Streque, Philippe Pigeat, S. Zhgoon, Abdelkrim Talbi, Sami Hage-Ali, Hamid M 'Jahed, Omar Elmazria

— Surface acoustic waves (SAW) technology is very promising to achieve wireless sensors able to operate in high temperature environments up to possibly 1000°C. However, there is currently a bottleneck related to the packaging of such sensors. The current high-temperature packaging solutions can...

Sensors and Actuators A: Physical , 2018, 283, pp.9-16. ⟨10.1016/j.sna.2018.08.011⟩. ⟨hal-01868387⟩

• ART

Exploitation of the ambient noise for the structural health monitoring of bars and tubes

Karl Hourany, Farouk Benmeddour, Emmanuel Moulin, Jamal Assaad, Dorothée Debavelaere-Callens, Youssef Zaatar

Image processing is a very vast field that includes both IT and applied mathematics. It is a discipline that studies the improvement and transformations of digital images hence permitting the improvement of the quality of these images and the extraction of information. The comparison of digital...

Analog Integrated Circuits and Signal Processing, 2018, 96 (2), pp.293-302. ⟨10.1007/s10470-018-1195-4⟩. ⟨hal-03185114⟩

• ART

Electronic structure of Si nanocrystals codoped with boron and phosphorus

Christophe Delerue

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2018, 98 (4), ⟨10.1103/physrevb.98.045434⟩. ⟨hal-02133333⟩

• POSTER

Crystal facet engineering in MIR ZnO nanow

Vincent Sallet, Corinne Sartel, Said Hassani, Alain Lusson, G. Amiri, François Jomard, Galtier P, Isabelle Lefebvre, Christophe Delerue, Bruno Masenelli

34th ICPS, Jul 2018, Montpellier, France. ⟨hal-02010183⟩

• POSTER

2D Rutherford-like scattering inside a ballistic semiconductor nanodevice

Hackens B., Toussaint S., Brun B., Faniel S., L. Desplanque, X. Wallart, Bayot V.

34th International Conference on the Physics of Semiconductors, ICPS 2018, Jul 2018, Montpellier, France. ⟨hal-04486094⟩

• ART

Voltage transient analysis as a generic tool for solar junction characterization

Ari Bimo Prakoso, Chenjin Lu, C Rusli, Daniele Cortecchia, Cesare Soci, Maxime Berthe, D. Deresmes, Boubakeur Ayachi, Jean-Pierre Vilcot, Heinrich Diesinger

Journal of Physics D: Applied Physics, 2018, 51 (34), ⟨10.1088/1361-6463/aad274⟩. ⟨hal-02331487⟩