Publicaciones

• COMM

[Invited] Lipid nanocapsules as a multifunctional platform: Towards triggered deep photodynamic Therapy

Rabah Boukherroub

• ART

Sensitive electrochemical detection of cardiac troponin I in serum and saliva by nitrogen-doped porous reduced graphene oxide electrode

Fereshteh Chekin, Alina Vasilescu, Roxana Jijie, Santosh K Singh, Sreekumar Kurungot, Mădălina Iancu, Gabriela Badea, Rabah Boukherroub, Sabine Szunerits

Sensors and Actuators B: Chemical, 2018, 262, pp.180-187. ⟨10.1016/j.snb.2018.01.215⟩. ⟨hal-02375195⟩

• ART

Nucleic aptamer modified porous reduced graphene oxide/MoS2 based electrodes for viral detection: Application to human papillomavirus (HPV)

Fereshteh Chekin, Komal Bagga, Palaniappan Subramanian, Roxana Jijie, Santosh K Singh, Sreekumar Kurungot, Rabah Boukherroub, Sabine Szunerits

Next to graphene nanomaterials, molybdenum disulfide (MoS 2) offers large surface area that can enhance its biosensing performance. In this work, we investigate the performance of glassy carbon (GC) electrodes modified successively with porous reduced graphene oxide (prGO) and molybdenum sulfide (...

Sensors and Actuators B: Chemical, 2018, 262, pp.991-1000. ⟨10.1016/j.snb.2018.02.065⟩. ⟨hal-02189345⟩

• ART

Surface morphology, structural and electrical properties of RF-sputtered ITO thin films on Si substrates

Ahlem Lebbad, Laid L.KERKACHE Kerkache, Abdelhamid Layadi, Floriane Leroy, Bandar Alshehri, El Hadj Dogheche

Series of indium tin oxide (ITO) thin films were deposited onto Si(100) substrate by RF sputtering. The film thickness ranges from 61 to 768 nm. X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM) experiments were performed to study the structure and the...

Bulletin of Materials Science, 2018, 41 (3), pp.74. ⟨10.1007/s12034-018-1595-1⟩. ⟨hal-03183493⟩

• ART

Optimization and improvement of a front graded bandgap CuInGaSe2 solar cell

Abdelkader Aissat, H. Arbouz, Jean-Pierre Vilcot

This paper reports simulations of gradual bandgap CIGS absorber and its impact on the characteristics of a solar cell. The bandgap of the CIGS absorber varies linearly and drops from Egmax (at the junction limit) to Egmin (in the vicinity of the rear contact).We introduce an effective absorption...

Solar Energy Materials and Solar Cells, 2018, 180, pp.381-385. ⟨10.1016/j.solmat.2017.09.017⟩. ⟨hal-02409503⟩

• ART

Tunable Contact Angle Hysteresis for Component Placement on Stretchable Superhydrophobic Surfaces

Catalin Mihai Balan, Alexis Vlandas, Vincent Senez

One of the promising strategies to achieve high performance flexible electronics is to integrate high performance components (micro-electro-mechanical systems, integrated circuit, etc.) on a flexible substrate. The heterointegration of fragile high performance components, for example, thinned down...

Advanced Materials Interfaces, 2018, 5 (12), pp.1701353. ⟨10.1002/admi.201701353⟩. ⟨hal-02411506⟩

• COMM

Large Periphery GaN HEMTs Modeling Using Distributed Gate Resistance

Bilal Hassan, Adrien Cutivet, Ali Soltani, Christophe Rodriguez, François Boone, Hassan Maher, Meriem Bouchilaoun

The coumpoud semiconductor week (CSW), May 2018, Boston, United States. ⟨hal-02310052⟩

• COMM

Scaling of GaN HEMTs Thermal Transient Characteristics

Adrien Cutivet, Meriem Bouchilaoun, Bilal Hassan, Christophe Rodriguez, Ali Soltani, François Boone, Hassan Maher

The compound semiconductor week (CSW), May 2018, Boston, United States. ⟨hal-02310050⟩

• COMM

Simulation of a Normally off GaN Vertical Fin Power Fet Transistor to Study Its Breakdown Mechanism

Marie-Clara Pépin, Hassan Maher, Christophe Rodriguez, Ali Soltani

The compound semiconductor week (CSW), May 2018, Boston, United States. ⟨hal-02310041⟩

• COMM

Evidence for recombination-induced degradation processes in InGaN-based optoelectronic devices

Carlo de Santi, Matteo Meneghini, Alessandro Caria, Nicola Renso, Ezgi Dogmus, Malek Zegaoui, F Medjdoub, Enrico Zanoni, Gaudenzio Meneghesso

For the first time, we demonstrate recombination-induced defect generation in InGaN/GaN-based optoelectronic devices, by stressing InGaN/GaN high periodicity MQW structures: the results will significantly improve the understanding of the degradation of LEDs, lasers and photodetectors, sinceso...

COMPOUND SEMICONDUCTOR WEEK 2018, May 2018, Cambridge, United States. ⟨hal-03287725⟩