Publicaciones

Affichage de 5271 à 5280 sur 16164


  • Poster de conférence

Electrochemomechanical characterization and modeling of ultrathin ionic electroactive polymer actuators

Tan Ngoc Nguyen, Sébastien Grondel, Caroline Soyer, Kätlin Rohtlaid, Cedric Plesse, Frederic Vidal, Eric Cattan, John D.W. Madden

ASME Conference on Smart Materials, Adaptive Structures and Intelligent Systems, SMASIS 2017, Sep 2017, Snowbird, United States. . ⟨hal-03591107⟩

  • Communication dans un congrès

Theory of Si nanocrystals (co)doped with P and B impurities

Christophe Delerue

EMRS Fall Meeting, Symposium T: Silicon, Germanium, Diamond and Carbon Nanostructures and Their Nanocomposites with Other Materials, Sep 2017, Warsaw, Poland. ⟨hal-03317609⟩

  • Poster de conférence

Characterizations of PEDOT:PSS micro transducers based on an original spincoating synthesis

Kätlin Rohtlaid, Cedric Plesse, Giao T.M. Nguyen, Caroline Soyer, Eric Cattan, Frederic Vidal

ASME Conference on Smart Materials, Adaptive Structures and Intelligent Systems, SMASIS 2017, Sep 2017, Snowbird, United States. . ⟨hal-03591101⟩

  • Communication dans un congrès

Reading Mathematics and Mechanics in Newton’s Geneva Edition ([1739-1742] 1822): Historical-Epistemological Reflections and NoS

Raffaele Pisano, Paolo Bussotti

Internatioanl Workshop Mathematics and Mechanics in the Newtonian Age, Institute of Mathematics, University of Seville, Sep 2017, Sevilla (Spain), Spain. ⟨hal-04519020⟩

  • Communication dans un congrès

A Source and Drain Transient Currents Technique for Trap Characterisation in AlGaN/GaN Based Devices

Steven Duffy, Brahim Benbakhti, Wei Zhang, Karol Kalna, Khaled Ahmeda, Maher, Hassan, Ali Soltani

47th European Solid-State Device Research Conference (ESSDERC), Sep 2017, Leuven, Belgium. ⟨hal-02310067⟩

  • Communication dans un congrès

Importance of buffer configuration in GaN HEMTs for high microwave performance and robustness

Romain Pécheux, Riad Kabouche, Ezgi Dogmus, Astrid Linge, Etienne Okada, Malek Zegaoui, F Medjdoub

We report on a comparison of the ultrathin (sub-10 nm barrier thickness) AlN/GaN heterostructure using two types of buffer layers: 1) carbon doped GaN high electron mobility transistors (HEMTs) and 2) double heterostructure field effect transistor (DHFET). It is observed that the carbon doped HEMT...

ESSDERC 2017 - 47th IEEE European Solid-State Device Research Conference (ESSDERC), Sep 2017, Leuven, Belgium. pp.228-231, ⟨10.1109/ESSDERC.2017.8066633⟩. ⟨hal-03028460⟩