Publicaciones

• Poster de conférence

Design and simulation of InGaN/GaN p-i-n photodiodes

Mourad Elbar, Bandar Alshehri, Souad Tobbeche, El Hadj Dogheche

12th International Conference on Nitride Semiconductors ICNS-12, Jul 2017, Strasbourg, France. 2018. ⟨hal-03552772⟩

• Poster de conférence

Frequency measurement using noise setup for III-nitrides based photodiode

Bandar Alshehri, Karim Dogheche, Abderrahim Ramdane, Didier Decoster, El Hadj Dogheche

12th International Conference on Nitride Semiconductors ICNS-12, Jul 2017, Strasbourg, France. ⟨hal-03549720⟩

• Communication dans un congrès

Carrier generation and recombination dynamics and reliability of InGaN-based photodetectors for high power densities

C de Santi, M Meneghini, A Caria, Ezgi Dogmus, Malek Zegaoui, F Medjdoub, G Meneghesso, E Zanoni

12th International Conference on Nitride Semiconductors 2017 (ICNS-12), Jul 2017, Strasbourg, France. ⟨hal-03298878⟩

• Article dans une revue

Full Sputtering Deposition of Thin Film Solar Cells: A Way of Achieving High Efficiency Sustainable Tandem Cells?

J.-P. Vilcot, B. Ayachi, T. Aviles, P. Miska

Journal of Electronic Materials, 2017, 46 (11), pp.6523-6527. ⟨10.1007/s11664-017-5694-3⟩. ⟨hal-05034157⟩

• Poster de conférence

III-nitrides based electro-optic modulators

Bandar Alshehri, Mohammed El Gibari, Li Hong Wu, Dimitri Pavlidis, El Hadj Dogheche

III-nitride materials deposited on sapphire and silicon, are considered mature semi-conductorsfor applications in photonics and optoelectronics. Unlike highly temperature sensitive optical waveguides made on more traditional materials such as InP, Gallium Nitride (GaN) is a good candidate for...

International Conference on Nitride Semiconductors, Jul 2017, Strasbourg, France. . ⟨hal-02487284⟩

• Article dans une revue

Transformational fluctuation electrodynamics: application to thermal radiation illusion

Ahmed Alwakil, Myriam Zerrad, Michel Bellieud, Denis Veynante, Franck Enguehard, Nathalie Rolland, Sebastian Volz, Claude Amra

Thermal radiation is a universal property for all objects with temperatures above 0K. Every object with a specific shape and emissivity has its own thermal radiation signature; such signature allows the object to be detected and recognized which can be an undesirable situation. In this paper, we...

Optics Express, 2017, 25 (15), pp.17343. ⟨10.1364/OE.25.017343⟩. ⟨hal-01565224⟩

• Communication dans un congrès

AlN-based HEMTs grown on silicon substrate by NH3-MBE

Stephanie Rennesson, Fabrice Semond, M. Nemoz, Jeans Massies, Stéphane Chenot, Ludovic Largeau, Ezgi Dogmus, Malek Zegaoui, F Medjdoub

In this paper, AlN-based HEMTs on silicon are demonstrated using NH3-MBE. The spirit is to get the highest 2DEG density theoretically achievable in nitrides while keeping thin barrier thickness, which is mandatory to achieve high frequency performances. To do that, the strategy consists in growing...

12th International Conference on Nitride Semiconductors 2017 (ICNS-12), Jul 2017, Strasbourg, France. ⟨hal-03298877⟩

• Communication dans un congrès

Substrate grounded GaN-on-Si HEMTs with record vertical breakdown above 2 kV

Ezgi Dogmus, Astrid Linge, Malek Zegaoui, F Medjdoub

12th International Conference on Nitride Semiconductors 2017 (ICNS-12), Jul 2017, Strasbourg, France. ⟨hal-03298876⟩

• Communication dans un congrès

Modeling Interference for Wireless Sensor Network Simulator

Umber Noreen, Ahcène Bounceur, Laurent Clavier

International Workshop Smart Technologies (WOSTec'17), Jul 2017, Cambridge, United Kingdom. ⟨hal-01524812⟩

• Communication dans un congrès

Advances in silicon surface texturization by metal assisted chemical etching for photovoltaic applications

Sylvain Le Gall, Raphaël Lachaume, Encarnacion Torralba, Mathieu Halbwax, Vincent Magnin, Taha El Assimi, Marin El Fouchier, Joseph Harari, Jean-Pierre Vilcot, Christine Cachet-Vivier, Stéphane Bastide

— New Si processes based on Metal Assisted Chemical Etching (MACE) are explored for solar cells texturization. Pt and Au are considered as catalysts for MACE of p and n-type Si substrates. 2D band bending modeling at the nanoscale shows that Pt nanoparticles (NPs) make ohmic contacts and induce...

2017 IEEE 44th Photovoltaic Specialists Conference (PVSC), IEEE, Jun 2017, Washington, United States. ⟨10.1109/pvsc.2017.8366525⟩. ⟨hal-01579151⟩