Publicaciones

Affichage de 5561 à 5570 sur 16075


  • Article dans une revue

Running Details on the Two Movements in the Intellectual History of Science and Ideas [Editorial]

Raffaele Pisano

Journal of Baltic Science Education, 2016, 15 (6), pp.660-661. ⟨10.33225/jbse/16.15.660⟩. ⟨hal-04509342⟩

  • Article dans une revue

Real-time mechanical characterization of DNA degradation under therapeutic X-rays and its theoretical modeling

Grégoire Perret, Thomas Lacornerie, Fabio Manca, Stefano Giordano, Momoko Kumemura, Nicolas Lafitte, Laurent Jalabert, Mehmet C Tarhan, Eric F Lartigau, Fabrizio Cleri, Hiroyuki Fujita, Dominique Collard

Abstract The killing of tumor cells by ionizing radiation beams in cancer radiotherapy is currently based on a rather empirical understanding of the basic mechanisms and effectiveness of DNA damage by radiation. By contrast, the mechanical behaviour of DNA encompassing sequence sensitivity and...

Microsystems & Nanoengineering, 2016, 2 (1), pp.16062. ⟨10.1038/micronano.2016.62⟩. ⟨hal-04567232⟩

  • Communication dans un congrès

Manipulating spin polarization and carrier mobility in zigzag graphene ribbons using an electric field

Jing Li, Yann-Michel Niquet, Christophe Delerue

2016 IEEE International Electron Devices Meeting (IEDM), Dec 2016, San Francisco, United States. pp.36.3.1-36.3.4. ⟨hal-02143466⟩

  • Article dans une revue

InGaAs-OI Substrate Fabrication on a 300 mm Wafer

A. Lecestre, N. Mallet, G. Larrieu, Sebastien Sollier, Julie Widiez, Gweltaz Gaudin, Frédéric Mazen, Thierry Baron, Mickail Martin, Marie-Christine Roure, Pascal Besson, Christophe Morales, Elodie Beche, Frank Fournel, Sylvie Favier, Amelie Salaun, Patrice Gergaud, Maryline Cordeau, Christellle Veytizou, Ludovic Ecarnot, Daniel Delprat, Ionut Radu, Thomas Signamarcheix

Journal of Low Power Electronics and Applications, 2016, 6 (4), pp.19. ⟨10.3390/jlpea6040019⟩. ⟨hal-01991855⟩

  • Article dans une revue

InAlGaN/GaN HEMTs at Cryogenic Temperatures

Ezgi Dogmus, Riad Kabouche, Sylvie Lepilliet, Astrid Linge, Malek Zegaoui, Hichem Ben-Ammar, Marie-Pierre Chauvat, Pierre Ruterana, Piero Gamarra, Cédric Lacam, Maurice Tordjman, F Medjdoub

We report on the electron transport properties of two-dimensional electron gas confined in a quaternary barrier InAlGaN/AlN/GaN heterostructure down to cryogenic temperatures for the first time. A state-of-the-art electron mobility of 7340 cm2·V−1·s−1 combined with a sheet carrier density of 1.93...

Electronics, 2016, 5 (2), pp.31. ⟨10.3390/electronics5020031⟩. ⟨hal-03028345⟩