Publicaciones

Affichage de 5611 à 5620 sur 16261


  • Brevet

Dispostif et procédé de sélection de cellules eucaryotes dans un canal de transport par altération des cellules eucaryotes au moyen d'un rayonnemement électromagnétique

Luc Liegeois, Emmanuel Courtade, Hervé Damart, Jean Pesez, Quentin Thommen, Anthony Treizebre

Chine, N° de brevet: CN106796171 (A) 2017-05-31. 2017, N° de priorité : FR20140057734 20140811 - N° de demande : CN2015850770 20150804. ⟨hal-05653785⟩

  • Communication dans un congrès

Chemical gas sensor based on a novel capacitive microwave flexible transducer and composite polymer carbon nanomaterials

Prince Bahoumina, Hamida Hallil, Jean-Luc Lachaud, Aymen Abdelghani, Kamel Frigui, Stéphane Bila, Dominique Baillargeat, Qing Zhang, Philippe Coquet, Carlos Paragua, Emmanuelle Pichonat, Henri Happy, Dominique Rebière, Corinne Dejous

This study presents the results on the feasibility of a resonant planar chemical capacitive sensor in the microwave frequency range suitable for gas detection and for wireless communications applications. The objective is to develop a low cost ultra-sensitive sensor that can be integrated into a...

19th Symposium on Design, Test, Integration & Packaging of MEMS and MOEMS (DTIP 2017), IEEE Conference, May 2017, Bordeaux, France. session - Microfluidics, Bio & Chemical sensors, 4 p., ⟨10.1109/DTIP.2017.7984509⟩. ⟨hal-01521569⟩

  • Communication dans un congrès

A Study of LoRa Low Power and Wide Area Network Technology

Umber Noreen, Ahcène Bounceur, Laurent Clavier

3rd IEEE International Conference on Advanced Technologies for Signal and Image Processing (ATSIP'2017), May 2017, Fez, Morocco. ⟨hal-01516485⟩

  • Communication dans un congrès

Caractérisation thermique de matériaux biosourcés et biodégradables par la methode 3-omega

Ghizlane Boussatour, P.-Y. Cresson, B. Genestie, N. Joly, T. Lasri

XIIIème Colloque Interuniversitaire Franco-Québécois sur la Thermique des Systèmes, May 2017, Saint-Lô., France. ⟨hal-04541851⟩

  • Communication dans un congrès

Low RF losses up to 110 GHz in GaN-on-silicon HEMTs

R Pecheux, Riad Kabouche, Ezgi Dogmus, A Linge, Malek Zegaoui, F Medjdoub

We report on low RF losses at the interface between the epitaxial structure and the silicon substrate (less than 0.8 dB/mm up to 110GHz) of AlN/GaN high electron mobility transistors (HEMTs) grown on silicon substrate. This stateof-the-art performance makes GaN-on-Silicon HEMTs competitive with GaN...

Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE2017, May 2017, Las Palmas de Gran Canaria, Spain. ⟨hal-03298883⟩

  • Communication dans un congrès

Millimeter-wave high power GaN transistors: the race for better efficiency

F Medjdoub

Millimeter-wave high power GaN transistors: the race for better efficiency, May 2017, Turin, Italy. ⟨hal-03298881⟩

  • Communication dans un congrès

Profiling and modelling of HEVC intra video encoder’s energy consumption for next generation WVSNS

Achraf Ait-Beni-Ifit, Othmane Alaoui-Fdili, Patrick Corlay, François-Xavier Coudoux, Driss Aboutajdine

5th International Conference on Networked Systems, NETYS 2017, May 2017, Marrakech, Morocco. ⟨hal-03579950⟩