Publicaciones

• Communication dans un congrès

Advantages of ALD over evaporation deposition for high-K materials integration in high power capacitive RF MEMS

Guillaume Croizier, Paolo Martins, M. Le Bailiff, Raphaël Aubry, S. Bansropun, M. Fryziel, Nathalie Rolland, Afshin Ziaei

We report a study over a wide range of high-K dielectric materials (AlxOy, HfOx, TiOx.) deposited by different techniques (Evaporation, ALD, PEALD ... ) for high power RF applications. Main results show that ALD technique is matching the McPherson trend based on thermochemical prediction....

19th International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers), Jun 2017, Kaohsiung, Taiwan. pp.1237-1240, ⟨10.1109/TRANSDUCERS.2017.7994279⟩. ⟨hal-03270114⟩

• Communication dans un congrès

A 140 GHz to 160 GHz active impedance tuner for in-situ noise characterization in BiCMOS 55 nm

Simon Bouvot, Joao Carlos Azevedo Goncalves, Alice Bossuet, Thomas Quemerais, Sylvie Lepilliet, Guillaume Ducournau, Francois Danneville, Daniel Gloria

A millimeter-wave active impedance tuner is implemented on the STMicroelectronics BiCMOS 55 nm technology for in-situ noise characterization. The presented circuit is composed of a two stage low noise amplifier with a gain of 11 dB and a NF of 7.5 dB at 150 GHz loading a 64 states passive impedance...

IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), Aug 2017, Seoul, South Korea. paper FR_3B_4, ⟨10.1109/RFIT.2017.8048233⟩. ⟨hal-03272701⟩

• Communication dans un congrès

Coupled model for determination of full electroelastic sets of 1-3 piezocomposite with various pillar shapes

Antoine Bale, Franck Levassort, Anne-Christine Hladky

The knowledge and determination of effective elastic, piezoelectric and dielectric constants for 1-3 piezocomposites play a key role in understanding and optimizing the performance of the material for various applications. This paper details a theoretical coupled method for determining the...

IEEE International Ultrasonics Symposium (IUS), Sep 2017, Washington, United States. ⟨10.1109/ULTSYM.2017.8091841⟩. ⟨hal-03300130⟩

• Article dans une revue

Minimum Line Width of Surface Plasmon Resonance in Doped ZnO Nanocrystals

Christophe Delerue

The optical response of ZnO nanocrystals (NCs) doped with Al (Ga) impurities is calculated using a model that incorporates the effects of quantum confinement, dielectric mismatch, surface, and ionized impurity scattering. For dopant concentrations of a few percent, the NC polarizability is...

Nano Letters, 2017, 17 (12), pp.7599-7605. ⟨10.1021/acs.nanolett.7b03605⟩. ⟨hal-02906807⟩

• Article dans une revue

Influence of viscosity on acoustic streaming in sessile droplets: an experimental and a numerical study with a Streaming Source Spatial Filtering (SSSF) method

Antoine Riaud, Michael Baudoin, Olivier Bou Matar, Jean-Louis Thomas, Philippe Brunet

When an acoustic wave travels in a lossy medium such as a liquid, it progressively transfers its pseudo-momentum to the fluid, which results in a steady flow called acoustic streaming. This phenomenon involves a balance between sound attenuation and shear, such that the streaming flow does not...

Journal of Fluid Mechanics, 2017, 821, pp.384-420. ⟨10.1017/jfm.2017.178⟩. ⟨hal-02332796⟩

• Autre publication scientifique

Advances in Historical Studies [Editor in Chief 6/2]

Raffaele Pisano

2017. ⟨hal-04511014⟩

• Article dans une revue

Impact of Gate Drain Spacing on Low-Frequency Noise Performance of In Situ SiN Passivated InAlGaN/GaN MIS-HEMTs

Mehdi Rzin, Jean-Marc Routoure, Bruno Guillet, Laurence Méchin, Magali Morales, Cédric Lacam, Piero Gamarra, Pierre Ruterana, F Medjdoub

In this paper we investigated the gate–drain access region spacing (L GD) effect on electrical and noise performance of InAlGaN/GaN metal– insulator–semiconductor high electron mobility transistors (MIS-HEMTs) using in situ SiN cap layer as gate insulator. Different L GD of InAlGaN/GaN MIS-HEMTs...

IEEE Transactions on Electron Devices, 2017, 64 (7), pp.2820-2825. ⟨10.1109/TED.2017.2703809⟩. ⟨hal-01560627⟩

• Article dans une revue

Atomic-scale structure of the glassy Ge 2 Sb 2 Te 5 phase change material: A quantitative assessment via first-principles molecular dynamics

Assil Bouzid, Guido Ori, Mauro Boero, Evelyne Lampin, Carlo Massobrio

The amorphous structure of the phase change material Ge2Sb2Te5 (GST) has been the object of controversial structural models. By employing first-principles molecular dynamics within density functional theory, we are able to obtain quantitative agreement with experimental structural findings for the...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2017, 96 (22), pp.224204. ⟨10.1103/PhysRevB.96.224204⟩. ⟨hal-02349392⟩

• Communication dans un congrès

Wireless monitoring system for lightweight aircraft landing gear

Christophe Delebarre, Sébastien Grondel, Samuel Dupont, F Rouvarel, M Yoshida

Mass repartition onboard lightweight aircraft is a crucial problem as it may generate difficulties for the pilot during the landing phase. Being able for the pilot to land the plane properly is of course an important aspect for safety, but also for structure integrity. So the mass repartition...

18th International Conference on Research and Education in Mechatronics (REM 2017), Sep 2017, Wolfenbuettel, Germany. pp.1-6, ⟨10.1109/REM.2017.8075230⟩. ⟨hal-03549288⟩

• Article dans une revue

High Frequency Acoustic On-Chip Integration for Particle Characterization and Manipulation in Microfluidics

Sizhe Li, Julien Carlier, Malika Toubal, Huiqin Liu, Pierre Campistron, Dorothee Callens, Georges Nassar, Bertrand Nongaillard, Shishang Guo

This letter presents a microfluidic device that integrates high frequency (650 MHz) bulk acoustic waves for the realization of particle handling on-chip. The core structure of the microfluidic chip is made up of a confocal lens, a vertical reflection wall, and a ZnO film transducer coupled with a...

Applied Physics Letters, 2017, 111 (16), pp.163503. ⟨10.1063/1.5003414⟩. ⟨hal-03258701⟩