Publicaciones

• Article dans une revue

Growth of c -Axis-Oriented BiCuSeO Thin Films Directly on Si Wafers

Xiaolin Wu, Linjie Gao, Pascal Roussel, El Hadj Dogheche, Jianglong Wang, Guangsheng Fu, Shufang Wang

Single-phase, c-axis-oriented BiCuSeO thin films have been directly grown on the commercial silicon (001) wafers without any surface pretreatment by using pulsed laser deposition. X-ray diffraction pole figure confirms that the film does not have any ab-plane texture, whereas cross-sectional...

Journal of the American Ceramic Society, 2016, 99 (10), pp.3367-3370. ⟨10.1111/jace.14359⟩. ⟨hal-02263699⟩

• Article dans une revue

Theoretical investigation of the phonon-limited carrier mobility in (001) Si films

Jing Li, Evelyne Lampin, Christophe Delerue, Yann-Michel Niquet

We calculate the phonon-limited carrier mobility in (001) Si films with a fully atomistic framework based on a tight-binding (TB) model for the electronic structure, a valence-force-field model for the phonons, and the Boltzmann transport equation. This framework reproduces the electron and phonon...

Journal of Applied Physics, 2016, 120 (17), pp.174301. ⟨10.1063/1.4966616⟩. ⟨cea-01849845⟩

• Article dans une revue

Transport properties of multigrained nanocomposites with imperfect interfaces

Pier Luca Palla, Stefano Giordano

Journal of Applied Physics, 2016, 120 (18), 184301, 9 p. ⟨10.1063/1.4967316⟩. ⟨hal-03407507⟩

• Communication dans un congrès

Deep Trench Isolation and Through Silicon Via Wetting Characterization by High-Frequency Acoustic Reflectometry

Christophe Virgilio, Lucile Broussous, Philippe Garnier, Julien Carlier, Pierre Campistron, V. Thomy, Malika Toubal, Pascal Besson, Laurence Gabette, Bertrand Nongaillard

Wetting efficiency of microstructures or nanostructures patterned on Si wafers is a real concern in integrated circuits manufacturing. We present here a high-frequency acoustic method which enables the local determination of the wetting state of a liquid on real DTI and TSV structures. Partial...

13th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS), Sep 2016, Knokke, Belgium. ⟨10.4028/www.scientific.net/SSP.255.129⟩. ⟨hal-03280231⟩

• Article dans une revue

Improved Performance of YIG (Y₃Fe₅O₁₂) Films Grown on Pt-Buffered Si Substrates by Chemical Solution Deposition Technique

Xin Guo, Ying Chen, Genshui Wang, Jun Ge, Yuanyuan Zhang, Xiaodong Tang, Freddy Ponchel, Denis Remiens, Xianlin Dong

High-quality Yttrium iron garnet (YIG) films with crack-free surface and improved magnetic performance were grown on platinum (Pt)-buffered Si substrates by chemical solution deposition technique. The saturation magnetization of obtained YIG films can reach 124 emu/cm3, which was the 88%...

• Autre publication scientifique

Advances in Historical Studies [Editor in Chief 5/5]

Raffaele Pisano

2016. ⟨hal-04511017⟩

• Communication dans un congrès

A Digital Delay Line with Coarse/Fine tuning through Gate/Body biasing in 28nm FDSOI

Ilias Sourikopoulos, Antoine Frappé, Andreia Cathelin, Laurent Clavier, Andreas Kaiser

This paper discusses the design and characterization of a programmable digital delay line. The core of the proposed architecture is a thyristor-type delay element featuring the capability for coarse/fine tuning without using any additional hardware. This is made possible by taking advantage of body...

46th European Solid-State Device Research Conference (ESSDERC) / 42nd European Solid-State Circuits Conference (ESSCIRC), Sep 2016, Lausanne, Switzerland. pp.145-148, ⟨10.1109/ESSCIRC.2016.7598263⟩. ⟨hal-03270099⟩

• Communication dans un congrès

Characterization and modeling of traps and RF frequency dispersion in AlGaN/AlN/GaN HEMTs

Hector Sanchez-Martin, Oscar Garcia-Perez, Ignacio Íñiguez-De-La-Torre, Susana Perez, Tomás González, Javier Mateos, Philippe Altuntas, N. Defrance, Marie Lesecq, Virginie Hoel, Yvon Cordier, Stephanie Rennesson

The performance of GaN transistors is still limited by physical and fabrication problems, mainly related to different kinds of traps. In this work, virgin transistors reveals strong low frequency dispersion both in the transconductance and output conductance, that we attribute to the presence of...

11th European Microwave Integrated Circuits Conference (EuMIC), Oct 2016, London, United Kingdom. paper EuMIC10-03, 153-156, ⟨10.1109/EuMIC.2016.7777513⟩. ⟨hal-03270103⟩

• Communication dans un congrès

Contact resistance study of “edge-contacted” metal-graphene interfaces

V. Passi, A. Gahoi, J. Ruhkopf, S. Kataria, Francois Vaurette, E. Pallecchi, H. Happy, M. C. Lemme

The contact resistance RC of "edge-contacted" metal-graphene interfaces is systematically studied. Our experiments demonstrate a reduction of contact resistance by intentional patterning of graphene to create "edge contacts". The parameter space for different hole patterns in...

46th European Solid-State Device Conference, ESSDERC 2016, Sep 2016, Lausanne, Switzerland. pp.236-239, ⟨10.1109/ESSDERC.2016.7599629⟩. ⟨hal-03335829⟩

• Article dans une revue

Investigations on the mechanical properties of the elementary thin films composing a CuIn1−xGaxSe2 solar cell using the nano indentation technique.

Hocine Abib, Alain Iost, Alex Montagne, Khadidja Rahmoun, Boubakeur Ayachi, Jean-Pierre Vilcot

The aim of this work is to assess the mechanical properties of the different layers composing a CIGS based solar cell. Fabrication uses the magnetron sputtering deposition technique (except for the CdS layer which was deposited using chemical bath deposition process). We performed several...

Thin Solid Films, 2016, pp.1-5. ⟨10.1016/j.tsf.2016.11.013⟩. ⟨hal-03166870⟩