Publicaciones

• Communication dans un congrès

Deep Trench Isolation and Through Silicon Via Wetting Characterization by High-Frequency Acoustic Reflectometry

Christophe Virgilio, Lucile Broussous, Philippe Garnier, Julien Carlier, Pierre Campistron, V. Thomy, Malika Toubal, Pascal Besson, Laurence Gabette, Bertrand Nongaillard

Wetting efficiency of microstructures or nanostructures patterned on Si wafers is a real concern in integrated circuits manufacturing. We present here a high-frequency acoustic method which enables the local determination of the wetting state of a liquid on real DTI and TSV structures. Partial...

13th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS), Sep 2016, Knokke, Belgium. ⟨10.4028/www.scientific.net/SSP.255.129⟩. ⟨hal-03280231⟩

• Article dans une revue

Improved Performance of YIG (Y₃Fe₅O₁₂) Films Grown on Pt-Buffered Si Substrates by Chemical Solution Deposition Technique

Xin Guo, Ying Chen, Genshui Wang, Jun Ge, Yuanyuan Zhang, Xiaodong Tang, Freddy Ponchel, Denis Remiens, Xianlin Dong

High-quality Yttrium iron garnet (YIG) films with crack-free surface and improved magnetic performance were grown on platinum (Pt)-buffered Si substrates by chemical solution deposition technique. The saturation magnetization of obtained YIG films can reach 124 emu/cm3, which was the 88%...

• Article dans une revue

Theoretical investigation of the phonon-limited carrier mobility in (001) Si films

Jing Li, Evelyne Lampin, Christophe Delerue, Yann-Michel Niquet

We calculate the phonon-limited carrier mobility in (001) Si films with a fully atomistic framework based on a tight-binding (TB) model for the electronic structure, a valence-force-field model for the phonons, and the Boltzmann transport equation. This framework reproduces the electron and phonon...

Journal of Applied Physics, 2016, 120 (17), pp.174301. ⟨10.1063/1.4966616⟩. ⟨cea-01849845⟩

• Article dans une revue

Transport properties of multigrained nanocomposites with imperfect interfaces

Pier Luca Palla, Stefano Giordano

Journal of Applied Physics, 2016, 120 (18), 184301, 9 p. ⟨10.1063/1.4967316⟩. ⟨hal-03407507⟩

• Article dans une revue

Growth of c -Axis-Oriented BiCuSeO Thin Films Directly on Si Wafers

Xiaolin Wu, Linjie Gao, Pascal Roussel, El Hadj Dogheche, Jianglong Wang, Guangsheng Fu, Shufang Wang

Single-phase, c-axis-oriented BiCuSeO thin films have been directly grown on the commercial silicon (001) wafers without any surface pretreatment by using pulsed laser deposition. X-ray diffraction pole figure confirms that the film does not have any ab-plane texture, whereas cross-sectional...

Journal of the American Ceramic Society, 2016, 99 (10), pp.3367-3370. ⟨10.1111/jace.14359⟩. ⟨hal-02263699⟩

• Communication dans un congrès

65 nm SOI CMOS 60 GHz passive mixer for six-port technology

Kamel Haddadi, Christophe Loyez

This work describes the design and measurements of a 60 GHz passive mixer for six-port applications operating and implemented in a 65nm SOI CMOS technology. The mixer topology, consisting only of a n-MOS cold-FET and CPW transmission line matching networks, avoids the use of coupler in front of the...

IEEE Topical Conference on Wireless Sensors and Sensor Networks, WiSNet 2016, Jan 2016, Austin, TX, United States. pp.52-55, ⟨10.1109/WISNET.2016.7444320⟩. ⟨hal-03224660⟩

• Article dans une revue

BRANCHED POLYESTERS FROM GERMYLATED AND FATTY COMPOUNDS

Nadia Katir, Daniela Andrade, Mohamed Dahrouch, Enzo Díaz, Nicolas Gatica, D. Hourlier, Nazmy Reyes, Miguel Zarraga

Journal of the Chilean Chemical Society, 2016, 61 (1), pp.2784-2787. ⟨10.4067/S0717-97072016000100008⟩. ⟨hal-02396330⟩

• Article dans une revue

Modeling and simulation of InAs/GaAs quantum dots for solar cell applications

A. Benahmed, Abdelkader Aissat, Abdelmalek Benkouider, Jean-Pierre Vilcot

This paper proposes a method of modeling and simulation of InAs/GaAs-based quantum dots (QDs) for solar cell. The main objective is to find the growth parameters in order to produce an optimal double heterostructure using two semiconductor materials InAs and GaAs. We are interested in particular on...

Optik, 2016, 127 (7), pp.3531-3534. ⟨10.1016/j.ijleo.2015.12.136⟩. ⟨hal-01434975⟩

• Article dans une revue

Enhanced ultraviolet luminescence of ZnO nanorods treated by high-pressure water vapor annealing (HWA)

Amer Al-Nafiey, Brigitte Sieber, B. Gelloz, Ahmed Addad, M. Moreau, Julien Barjon, Maria Girleanu, Ovidiu Ersen, Rabah Boukherroub

Zinc oxide nanorods (ZnO NRs), synthesized by a low temperature chemical method, were postannealed at 260°C in air and under high pressure water vapor (HWA) at 1.3-3.9 MPa. We found that the UV luminescence intensity increased by a factor of 2-3 after HWA annealing compared to that observed after...

Journal of Physical Chemistry C, 2016, 120, pp.4571 - 4580. ⟨10.1021/acs.jpcc.5b09201⟩. ⟨hal-01348817⟩

• Article dans une revue

Preparation and characterization of Ni-doped ZnO–SnO₂ nanocomposites: Application in photocatalysis

Monaam Ben Ali, Fatiha Barka-Bouaifel, Brigitte Sieber, Habib Elhouichet, Ahmed Addad, Luc Boussekey, Mokhtar Férid, Rabah Boukherroub

The paper reports on the synthesis of nickel-doped ZnO-SnO₂ nanocomposites with a molar ratio Zn:Sn of 2:1 using the hydrothermal method followed by calcination at 700 °C. The resulting nanocomposites were characterized using X-ray diffraction (XRD) patterns, transmission...